Semiconductor component

Claim 1

A power semiconductor device comprising: a large-area semiconductor substrate of a first thickness; a plurality of differently doped layers provided within said substrate between an anode and a cathode with a thyristor layer sequence including an anode layer, a p-base layer, an n-base layer and a cathode layer, said layer sequence defining a thyristor which can be switched off via a gate; said cathode layer and p-base layer comprising a step-like gate-cathode structure, in which a plurality of cathode fingers project out of and are separated by a recessed gate plane thus forming a control structure, said control structure subdivided into a plurality of separated control zones, each of said control zones comprising a plurality of said cathode fingers; said first thickness of said semiconductor substrate being reduced by a plurality of deep etch wells introduced into said semiconductor substrate on the side of said anode opposite respective of said control zones, each etch well having an area approximately equal to the area of the control zone opposite thereto; said etch wells reducing said thickness over an area of said semiconductor substrate which comprises a plurality of said cathode fingers; said semiconductor substrate being soldered onto a metal substrate with said anode side; and said etch wells being completely filled in with solder.