Disconnectable power semiconductor component

Claim 2

A disconnectable power semiconductor component comprising: an anode and a cathode; a p-type anode layer located between said anode and said cathode; a n-type base layer formed above said anode layer; and a cathode-gate structure formed above said base layer at a cathode side, said cathode-gate structure comprising, a continuous intermediate layer having low p-type doping and being contiguous to said base layer, a plurality of n-type cathode regions on top of said intermediate layer, said cathode regions being separated from each other by troughs, which extend from said cathode side into said intermediate layer and have a bottom and side walls, a plurality of p-type gate regions, each of said gate regions extending both over said bottom and over said side walls of the respective of said troughs; wherein the gate regions of the side walls of neighboring of said troughs enclose between them a channel region; and wherein said intermediate layer separates said gate regions and said cathode regions from said base layer and has a doping concentration lower than that of said gate region.

Claim 3

A power semiconductor component according to claim 1, comprising: said side walls of said troughs being perpendicular to the bottoms thereof; said troughs having a width of between 10 μ and 30 μ and said cathode regions having a width of between 6 μ and 40 μ; gate contacts in the form of a coherent metal layer formed on said gate regions; and said gate regions being in contact with said cathode regions and having a thickness of between 3 μ and 10 μ and a doping concentration of 2×10 16 cm -3 at an exterior surface of said side walls.

Claim 4

A power semiconductor component according to claim 2, wherein the vertical distance between the bottom of said cathode regions and the bottom of said gate regions extending over the bottom of said troughs is greater than the width of said channel regions.

Claim 5

A power semiconductor component according to claim 2, comprising: cathode contacts provided on said cathode regions and projecting by at least 1 μ into said troughs; an insulation layer filling said troughs and covering said gate contacts and the trough side walls; and a continuous metal layer applied over said cathode contacts and said insulating layer, said continuous metal layer conductively connected to said cathode contacts.

Claim 6

A power semiconductor component according to claim 4, wherein: said insulating layer consists of a polyimide; said continuous metal layer comprises a sequence of layers Cr-Ni-Ag; and said cathode contacts and said gate contacts consist of Al.

Claim 7

A power semiconductor component according to claim 1, wherein said intermediate layer has a doping concentration less than 1×10 15 cm -3 .

Claim 8

A power semiconductor component according to claim 6, wherein said intermediate layer has a doping concentration of approximately 1×10 14 cm -3 .

Claim 9

A disconnectable power semiconductor component comprising: an anode and a cathode; a p-type anode layer located between the anode and the cathode; a n-type base layer formed above said anode layer; and a cathode-gate structure formed above said base layer at the cathode side, said cathode-gate structure comprising, a plurality of n-type cathode regions on top of said base layer, said cathode regions being separated from each other by troughs, which extend from said cathode side into said base layer and have a bottom and side walls, a plurality of p-type gate regions, each of said gate regions extending both over said bottom and over said side walls of the respective of said troughs, whereby the gate regions of the side walls of neighboring of said troughs enclose between them a channel region; said side walls of said troughs being perpendicular to the bottoms thereof, said troughs having a width of between 10 μ and 30 μ and said cathode regions having a width of between 6 μ and 40 μ, gate contacts in the form of a coherent metal layer formed on said gate regions, and said gate regions being in contact with said cathode regions and having at said side walls a thickness of between 2 μ and 10 μ and a doping concentration of 2×10 16 cm -3 at an exterior surface of said side walls.

Claim 10

A disconnectable power semiconductor component comprising: an anode and a cathode; a p-type anode layer located between the anode and the cathode; a n-type base layer formed above said anode layer; and a cathode-gate structure formed above said base layer at the cathode side, said cathode-gate structure comprising, a plurality of n-type cathode regions on top of said base layer, said cathode regions being separated from each other by troughs, which extend from said cathode side into said base layer and have a bottom and side walls, a plurality of p-type gate regions, each of said gate regions extending both over said bottom and over said side walls of the respective of said troughs, whereby the gate regions of the side walls of neighboring of said troughs enclose between them a channel region; said side walls of said troughs being perpendicular to the bottoms thereof, said troughs having a width of between 10 μ and 30 μ and said cathode regions having a width of between 6 μ and 40 μ, gate contacts in the form of a coherent metal layer formed on said gate regions, and said gate regions being in contact with said cathode regions and having at said side walls a thickness of between 2 μ and 10 μ and a doping concentration of 2×10 16 cm -3 at an exterior surface of said side walls.

Claim 11

A power semiconductor component according to claim 8, wherein the vertical distance between the bottom of said cathode regions and the bottom of said gate regions extending over the bottom of said troughs is greater than the width of said channel regions.

Claim 12

A power semiconductor component according to claim 9, comprising: cathode contacts provided on said cathode regions and projecting by at least μ into said troughs; an insulation layer filling said troughs and covering said gate contacts and said trough side walls; and a continuous metal layer applied over said cathode contacts and said insulating layer, said continuous metal layer conductively connected to said cathode contacts.

Claim 13

A power semiconductor component according to claim 10, wherein: said insulating layer consists of a polyimide; said continuous metal layer comprises a sequence of layers Cr-Ni-Ag; and said cathode contacts and said gate contacts consist of Al.

Claim 14

A disconnectable power semiconductor component comprising: an anode and a cathode; a p-type anode layer located between the anode and the cathode; a n-type base layer formed above said anode layer; and a cathode-gate structure formed above said base layer at the cathode side, said cathode-gate structure comprising, a continuous intermediate layer having low p-type gate regions, which are alternately arranged at said cathode side; wherein each of said gate regions and cathode regions extends from a common plane at said cathode side into said intermediate layer and is surrounded by said intermediate layer; and wherein said intermediate layer has a depth approximately twice the depth of said gate regions, both depths measured from said common plane at said cathode side, and has a doping concentration lower than that of said gate regions.

Claim 15

A disconnectable power semiconductor component comprising: an anode and a cathode; a p-type anode layer located between the anode and the cathode; a n-type base layer formed above said anode layer; and a cathode-gate structure formed above said base layer at the cathode side, said cathode-gate structure comprising, a continuous intermediate layer having low p-type gate regions, which are alternately arranged at said cathode side; wherein each of said gate regions and cathode regions extends from a common plane at said cathode side into said intermediate layer and is surrounded by said intermediate layer; and wherein said intermediate layer has a depth approximately twice the depth of said gate regions, both depths measured from said common plane at said cathode side, and has a doping concentration lower than that of said gate regions.