US6448645B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Denso Corp
•
Filing: 2000-01-21
•
Granted: 2002-09-10
•
Expires: 2020-01-21
Abstract
Abstract A semiconductor device which improves heat radiation performance and realizes size reduction and enables heat to be radiated swiftly from both of the principal surfaces of a semiconductor chip even when the semiconductor chip has a construction vulnerable to stresses. It comprises several IGBT chips each having a collector electrode on one principal surface and an emitter electrode and a gate electrode on the other principal surface and two high thermal conductivity insulating substrates sandwiching these IGBT chips and having electrode patterns for bonding to the electrodes of the IGBT chips disposed on their sandwiching surfaces, the electrodes of the IGBT chips and the electrode patterns of the high thermal conductivity insulating substrates being bonded by brazing.
Inventors
- 👤 Tomonori Kimura
- 👤 Norihito Tokura
- 👤 Fumio Ohara
- 👤 Masahito Mizukoshi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 16:57
CPC Classifications
H; H10; H10W; H10W90/00; H10W44/00; H10W44/501; H10W72/00; H10W72/071; H10W72/073; H10W72/07351; H10W72/07354; H10W72/30; H10W72/341; H10W72/347; H10W90/701; H10W90/731; H10W90/734
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
220 words
A semiconductor device comprising: a first semiconductor chip having a first principle surface and a second principle surface opposite to said first principle surface, said first principle surface having a first main electrode, said second principle surface having a second main electrode; a second semiconductor chip having a third principle surface and a fourth principle surface opposite to said third principle surface, said third principle surface having a third main electrode, said fourth principle surface having a fourth main electrode; a first electrode member connected to said first main electrode of said first semiconductor chip and said third main electrode of said second semiconductor chip; a second electrode member connected to said second main electrode of said first semiconductor chip and said fourth main electrode of said second semiconductor chip, said first and second semiconductor chips being sandwiched between said first and second electrode members; and an insulating resin holding a sandwich portion of said first and second semiconductor chips and said first and second electrode members to envelope said first and second semiconductor chips, wherein said second electrode member has a first protruding portion at a first place corresponding to said second main electrode of said first semiconductor chip and a second protruding portion at a second place corresponding to said fourth main electrode of said second semiconductor chip.
Claim 2
Dependent Claim
220 words
A semiconductor device comprising: a first semiconductor chip having a first principle surface and a second principle surface opposite to said first principle surface, said first principle surface having a first main electrode, said second principle surface having a second main electrode; a second semiconductor chip having a third principle surface and a fourth principle surface opposite to said third principle surface, said third principle surface having a third main electrode, said fourth principle surface having a fourth main electrode; a first electrode member connected to said first main electrode of said first semiconductor chip and said third main electrode of said second semiconductor chip; a second electrode member connected to said second main electrode of said first semiconductor chip and said fourth main electrode of said second semiconductor chip, said first and second semiconductor chips being sandwiched between said first and second electrode members; and an insulating resin holding a sandwich portion of said first and second semiconductor chips and said first and second electrode members to envelope said first and second semiconductor chips, wherein said second electrode member has a first protruding portion at a first place corresponding to said second main electrode of said first semiconductor chip and a second protruding portion at a second place corresponding to said fourth main electrode of said second semiconductor chip.
Claim 3
Dependent Claim
90 words
A semiconductor device according to claim 1 , wherein a first bonding area, which is connected to said second main electrode of said first semiconductor chip, of said first protruding portion is equal to or smaller than an area of said second main electrode of said first semiconductor chip, and a second bonding area, which is connected to said fourth main electrode of said second semiconductor chip, of said second protruding portion is equal to or smaller than an area of said fourth main electrode of said second semiconductor chip.
Claim 4
Dependent Claim
92 words
A semiconductor device according to claim 2 , wherein: said fast semiconductor chip has a first guard ring at a side of said second principle surface, said first guard ring surrounding said second main electrode, said first protruding portion preventing said second electrode member from contacting said first guard ring; and said second semiconductor chip has a second guard ring at a side of said fourth principle surface, said second guard ring surrounding said fourth main electrode, said Second protruding portion preventing said second electrode member from contacting said second guard ring.
Claim 5
Dependent Claim
50 words
A semiconductor device according to claim 1 , wherein said second electrode member comprising a plate part, a first protruding part attached to said plate part and a second protruding part attached to said plate part, said first and second protruding parts forming said first and second protruding portions, respectively.
Claim 6
Dependent Claim
27 words
A semiconductor device according to claim 1 , wherein said first and second electrode members comprise a metal selected from the group consisting of copper and aluminum.
Claim 7
Dependent Claim
27 words
A semiconductor device according to claim 1 , wherein said insulating resin comprises a thermosetting resin selected from the group consisting of epoxy resin and silicone resin.
Claim 8
Dependent Claim
29 words
A semiconductor device according to claim 1 , wherein said first and second electrode members are connected to said first through fourth main electrodes, respectively, with a brazing material.
Claim 9
Dependent Claim
14 words
A semiconductor device according to claim 7 , wherein said brazing material comprises solder.
Claim 10
Dependent Claim
50 words
A semiconductor device according to claim 1 , further comprising a first high thermal conductivity insulating substrate holding said first electrode member and a second high thermal conductivity insulating substrate holding said second electrode member, said sandwich portion being sandwiched between said first and second high thermal conductivity insulating substrates.
Claim 11
Dependent Claim
21 words
A semiconductor device according to claim 9 , wherein said first and second high thermal conductivity insulating substrates comprise aluminum nitride.
Claim 12
Dependent Claim
62 words
A semiconductor device according to claim 9 , further comprising a first heat radiation member attached to said first high thermal conductivity insulating substrate and a second heat radiation member attached to said second high thermal conductivity insulating substrate, said sandwich portion being sandwiched between said first and second heat radiation members through said first and second high thermal conductivity insulating substrates.
Claim 13
Dependent Claim
33 words
A semiconductor device according to claim 11 , wherein said first and second heat radiation members comprise a high thermal conductivity material selected from the group consisting of copper, ceramic including silicon carbide.
Claim 14
Dependent Claim
106 words
A semiconductor device according to claim 1 , wherein: said first semiconductor chip comprises a first vertical type insulated gate bipolar transistor, said first main electrode forms a collector electrode of said first vertical type insulated gate bipolar transistor, and said second main electrode forms an emitter electrode of said first vertical type insulated gate bipolar transistor; and said second semiconductor chip comprises a second vertical type insulated gate bipolar transistor, said third main electrode forms a collector electrode of said second vertical type insulated gate bipolar transistor, and said fourth main electrode forms an emitter electrode of said second vertical type insulated gate bipolar transistor.
Claim 15
Dependent Claim
101 words
A semiconductor device according to claim 1 , wherein: said first semiconductor chip comprises a vertical type insulated gate bipolar transistor, said first main electrode forms a collector electrode of said vertical type insulated gate bipolar transistor, and said second main electrode forms an emitter electrode of said vertical type insulated gate bipolar transistor; and said second semiconductor chip comprises a vertical type diode, said third main electrode is connected to said collector electrode of said vertical type insulated gate bipolar transistor, and said fourth main electrode is connected to said emitter electrode of said vertical type insulated gate bipolar transistor.
Claim 16
Dependent Claim
33 words
A semiconductor device according to claim 1 , wherein said first semiconductor chip is electrically connected in serial with said second semiconductor chip and is integrally formed with the said second semiconductor chip.
Claim 17
Dependent Claim
34 words
A semiconductor device according to claim 9 , wherein at least one of said first and second high thermal conductivity insulating substrate includes a protrusion bonded to an opposite high thermal conductivity insulating substrate.
Claim 18
Dependent Claim
27 words
A semiconductor device according to claim 16 , wherein said opposite high thermal conductivity insulating substrate include a groove which is matched and bonded to said protrusion.
References Cited (Backward Citations)
US4141030A
Cited
JPS5440569A
Cited
JPS5495183A
Cited
JPS5931042A
Cited
JPS5938734A
Cited
US4538170A
Cited
US4646129A
Cited
JPS61251043A
Cited
US5708299A
Cited
JPS62287649A
Cited
US4827082A
Cited
JPH01228138A
Cited
JPH0320067A
Cited
JPH04249353A
Cited
JPH06291223A
Cited
JPH0738013A
Cited
JPH07273276A
Cited
JPH08330338A
Cited
JPH1056131A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2005-09-09 | 2006-03-11 | 2006-09-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-09-09 | 2010-03-11 | 2010-09-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-09-09 | 2014-03-11 | 2014-09-10 | $7700.00 | Window Closed / Lapsed |