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Patent US6524952B1 successfully refreshed from Google Patents.
US6524952B1
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US
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Method of forming a titanium silicide layer on a substrate
Assignee: Applied Materials Inc
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Filing: 2000-06-20
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Granted: 2003-02-25
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Expires: 2020-06-20
Abstract
Abstract A method of forming a silicide layer in contact with a silicon substrate. The method comprises forming the silicide layer by supplying a silicon-containing source that is different from the silicon substrate, such that the silicon in the silicide layer originates primarily from the silicon-containing source.
Inventors
- 👤 Ramanujapuram A. Srinivas
- 👤 Brian Metzger
- 👤 Shulin Wang
- 👤 Frederick C. Wu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:51
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/074; H10W20/076; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; H10D64/01125; H10W20/031; H10W20/032; H10W20/033; H10W20/047; H10W20/048; Y; Y10; Y10S; Y10S438/00; Y10S438/906; Y10S438/909
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
101 words
A method of forming a silicide layer in contact with a silicon substrate, comprising the steps of: (a) forming a metal-containing layer in contact with the silicon substrate; (b) exposing the metal-containing layer to a gaseous precursor comprising a catalyst for forming a metal silicide, wherein the catalyst scavenges chlorine from the metal-containing layer; (c) exposing the metal-containing layer to a silicon-containing source that is different from the silicon substrate; and (d) forming the metal silicide layer by reacting the metal-containing layer with the silicon-containing source; wherein the metal silicide layer is formed from silicon originating primarily from the silicon-containing source.
Claim 2
Independent Claim
101 words
A method of forming a silicide layer in contact with a silicon substrate, comprising the steps of: (a) forming a metal-containing layer in contact with the silicon substrate; (b) exposing the metal-containing layer to a gaseous precursor comprising a catalyst for forming a metal silicide, wherein the catalyst scavenges chlorine from the metal-containing layer; (c) exposing the metal-containing layer to a silicon-containing source that is different from the silicon substrate; and (d) forming the metal silicide layer by reacting the metal-containing layer with the silicon-containing source; wherein the metal silicide layer is formed from silicon originating primarily from the silicon-containing source.
Claim 3
Dependent Claim
28 words
The method of claim 1 , wherein the metal-containing layer of the step (a) is an adsorbed layer formed by exposing the silicon substrate to a metal-containing precursor.
Claim 4
Dependent Claim
26 words
The method of claim 2 , further comprising: performing steps (a) through (d) in a chamber; and between the steps (a) and (c), purging the chamber.
Claim 5
Dependent Claim
14 words
The method of claim 3 , wherein the metal-containing precursor is TiCl 4 .
Claim 6
Dependent Claim
24 words
The method of claim 3 , wherein the silicon-containing source of the step (c) is selected from the group comprising silane, disilane and dichlorosilane.
Claim 7
Dependent Claim
121 words
The method of claim 3 , further comprising the steps of: (e) after step (d), purging the chamber; (f) forming another adsorbed metal-containing layer by exposing the previously formed metal silicide layer to the metal-containing precursor inside the chamber; (g) exposing the metal-containing layer to a gaseous precursor comprising a catalyst for forming a metal silicide layer, wherein the catalyst scavenges chlorine from the metal-containing layer; (h) after the step (g), purging the chamber; (i) forming another metal silicide layer on the previously formed metal silicide layer by exposing the another adsorbed metal-containing layer to a silicon-containing environment; and j) repeating the steps (e) through (i) for additional cycles to form a composite metal silicide layer having a desired total thickness.
Claim 8
Dependent Claim
19 words
The method of claim 3 , further comprising the step of: between steps (a) and (b), purging the chamber.
Claim 9
Dependent Claim
42 words
The method of claim 3 , further comprising the steps of: (e) after the step (d), purging the chamber; (f) forming a layer comprising a ternary metal silicide by exposing the metal silicide layer of the step (d) to a nitrogen-containing environment.
Claim 10
Dependent Claim
27 words
The method of claim 4 , wherein the adsorbed layer is formed at a flow rate of TiCl 4 of between about 50 and about 1000 mg/minute.
Claim 11
Dependent Claim
25 words
The method of claim 4 , wherein the step (d) is performed with the silicon-containing source at a flow rate less than about 5000 sccm.
Claim 12
Dependent Claim
27 words
The method of claim 4 , wherein the step (d) is performed at a partial pressure of the silicon-containing source between about 0.5 and about 20 torr.
Claim 13
Dependent Claim
22 words
The method of claim 4 , wherein the step (d) is performed at a temperature between about 400 and about 700° C.
Claim 14
Dependent Claim
29 words
The method of claim 2 , further comprising the step of: (e) forming a conductive layer upon the metal silicide layer, wherein the conductive layer is a metal nitride.
Claim 15
Dependent Claim
14 words
The method of claim 1 , wherein the metal-containing layer is a metal layer.
Claim 16
Dependent Claim
24 words
The method of claim 14 , wherein the metal layer is a refractory metal selected from the group consisting of titanium, tantalum and tungsten.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2006-02-24 | 2006-08-26 | 2007-02-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-02-24 | 2010-08-26 | 2011-02-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-02-24 | 2014-08-26 | 2015-02-25 | $7700.00 | Window Closed / Lapsed |