US6071552A
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US
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Insitu formation of TiSi2 /TiN bi-layer structures using self-aligned nitridation treatment on underlying CVD-TiSi2 layer
Assignee: Industrial Technology Research Institute
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Filing: 1998-09-30
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Granted: 2000-06-06
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Expires: 2018-09-30
Abstract
Abstract The present invention provides a method of forming a contact structure comprised of: a silicon substrate, a titanium silicide layer, a barrier layer (i.e., TiN or TiNO), and a metal layer (e.g., Al or W). There are three embodiments of the invention for forming the titanium silicide layer and two embodiments for forming the barrier layer (TiN or TiNO). The first embodiment for forming a TiSix layer comprises three selective deposition steps with varying TiCl4: SiH4 ratios. After the TiSix contact layer is formed a barrier layer and a metal plug layer are formed thereover to form a contact structure. The method comprises forming a barrier layer 140 over the silicide contact layer 126; and forming a metal plug 160 over the TiN barrier layer 140. The metal plug 160 is composed of Al or W.
Inventors
- 👤 Tzu-Kun Ku
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:10
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/047; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/42; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; H10D64/01125; H10D64/025; H10W20/033; Y; Y10; Y10S; Y10S438/00; Y10S438/904; Y10S438/909
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
174 words
A method of forming a titanium silicide contact on a substrate comprising the steps of: a) forming a first insulating layer having a contact opening over the substrate; b) selectively depositing a silicon layer over said substrate in said contact opening; c) etching said silicon layer using a gas of a material selected from the group consisting of HCL, ClF 3 , C 2 F 6 and SiF 4 ; d) selectively depositing a first titanium silicide layer over said silicon layer in said contact opening; said first titanium silicide layer being deposited with a first TiCl 4 to Si containing gas flow ratio; and e) selectively depositing a second titanium silicide layer over said first titanium silicide layer using a selective deposition process with a second TiCl 4 to Si containing gas flow ratio lower than said first flow ratio and using a chloride containing gas of a material selected from the group consisting of HCL and ClF 3 ; said first and second titanium silicide layers forming a titanium silicide contact layer.
Claim 2
Independent Claim
174 words
A method of forming a titanium silicide contact on a substrate comprising the steps of: a) forming a first insulating layer having a contact opening over the substrate; b) selectively depositing a silicon layer over said substrate in said contact opening; c) etching said silicon layer using a gas of a material selected from the group consisting of HCL, ClF 3 , C 2 F 6 and SiF 4 ; d) selectively depositing a first titanium silicide layer over said silicon layer in said contact opening; said first titanium silicide layer being deposited with a first TiCl 4 to Si containing gas flow ratio; and e) selectively depositing a second titanium silicide layer over said first titanium silicide layer using a selective deposition process with a second TiCl 4 to Si containing gas flow ratio lower than said first flow ratio and using a chloride containing gas of a material selected from the group consisting of HCL and ClF 3 ; said first and second titanium silicide layers forming a titanium silicide contact layer.
Claim 3
Dependent Claim
31 words
The method of claim 1 wherein which further includes after step (a): insitu cleaning said substrate using a gas selected from the group consisting of SiH 4 and H 2 .
Claim 4
Dependent Claim
60 words
The method of claim 1 wherein step (b) is preformed at a temperature between 400 and 1000° C., a pressure between 1 torr and 100 torr, said Si containing gas is composed of a gas selected from the group consisting of SiH 4 and SiH 2 Cl 2 and has with a flow rate between 10 sccm and 100 sccm.
Claim 5
Dependent Claim
27 words
The method of claim 1 wherein step (c) is performed at a temperature between 600 and 800° C., and at a pressure 50 mtorr and 50 torr.
Claim 6
Dependent Claim
64 words
The method of claim 1 wherein step (D) is performed at a temperature between 500 and 1000° C., at a pressure between 50 mtorr and 50 torr and a TiCl 4 to Si containing gas flow ratio between 0.2 and 10; said silicon containing gas is comprised of a gas selected from the group consisting of SiH 4 and SiH 2 Cl 2 .
Claim 7
Dependent Claim
64 words
The method of claim 1 wherein step (e) is performed at a temperature between 500 and 1000° C. and a pressure between 50 mtorr and 50 torr and a TiCl 4 to Si containing gas flow ratio between 0.01 and 0.2; said silicon containing gas is comprised of a gas selected from the group consisting of SiH 4 and SiH 2 Cl 2 .
Claim 8
Independent Claim
306 words
A method of forming a contact structure composed of a titanium silicide layer/TiN bi-layer for contacting a substrate of a semiconductor device; comprising the steps of: a) forming a titanium silicide contact layer on said substrate in said contact opening; said titanium silicide contact layer formed by: (a1) providing a first insulating layer having a contact opening over a substrate; (a2) simultaneously selectively depositing a silicon layer and an overlying first titanium silicide layer at a low TiCl 4 to Si containing gas flow ratio between about 0.05 to 0.08; (a3) selectively depositing a second titanium silicide layer over said first titanium silicide layer so that said second titanium silicide layer consumes said silicon layer; said second titanium silicide layer formed at a high TiCl 4 to Si containing gas flow ratio between about 0.2 and 10, whereby the high TiCl 4 to Si containing gas flow ratio causes said second titanium silicide layer to consume said silicon layer; (a4) selectively depositing a third titanium silicide TiSi 2 layer over said second titanium silicide layer at an intermediate TiCl 4 to Si containing gas flow ratio between about 0.08 and 0.2 and using a chloride containing gas of a material selected from the group consisting of HCL and ClF 3 ; said first, second and third titanium silicide layers forming a titanium silicide contact layer; b) forming a barrier layer over said titanium silicide contact layer; said barrier layer is composed of TiN and said barrier layer is formed using a self-aligned nitridation treatment performed insitu using a nitrogen containing gas of a material selected from the group consisting of N 2 or NH 3 , using a plasma process; c) forming a metal plug over said TiN barrier layer; said metal plug composed of a material selected from the group consisting of Al and W.
Claim 9
Independent Claim
306 words
A method of forming a contact structure composed of a titanium silicide layer/TiN bi-layer for contacting a substrate of a semiconductor device; comprising the steps of: a) forming a titanium silicide contact layer on said substrate in said contact opening; said titanium silicide contact layer formed by: (a1) providing a first insulating layer having a contact opening over a substrate; (a2) simultaneously selectively depositing a silicon layer and an overlying first titanium silicide layer at a low TiCl 4 to Si containing gas flow ratio between about 0.05 to 0.08; (a3) selectively depositing a second titanium silicide layer over said first titanium silicide layer so that said second titanium silicide layer consumes said silicon layer; said second titanium silicide layer formed at a high TiCl 4 to Si containing gas flow ratio between about 0.2 and 10, whereby the high TiCl 4 to Si containing gas flow ratio causes said second titanium silicide layer to consume said silicon layer; (a4) selectively depositing a third titanium silicide TiSi 2 layer over said second titanium silicide layer at an intermediate TiCl 4 to Si containing gas flow ratio between about 0.08 and 0.2 and using a chloride containing gas of a material selected from the group consisting of HCL and ClF 3 ; said first, second and third titanium silicide layers forming a titanium silicide contact layer; b) forming a barrier layer over said titanium silicide contact layer; said barrier layer is composed of TiN and said barrier layer is formed using a self-aligned nitridation treatment performed insitu using a nitrogen containing gas of a material selected from the group consisting of N 2 or NH 3 , using a plasma process; c) forming a metal plug over said TiN barrier layer; said metal plug composed of a material selected from the group consisting of Al and W.
Claim 10
Dependent Claim
29 words
The method of claim 7 wherein said barrier layer is composed of Ti--N--O and said barrier layer is formed using a nitridation in a nitrogen and oxygen containing ambient.
Claim 11
Independent Claim
285 words
A method of forming a contact structure composed of a titanium silicide layer/TiN bi-layer for contacting a substrate of a semiconductor device; comprising the steps of: a) forming a titanium silicide contact layer on said substrate in said contact opening; said titanium silicide contact layer formed by: (a1) forming first insulating layer having a contact opening over a substrate; (a2) selectively depositing a silicon layer over said substrate in said contact opening; (a3) etching said silicon layer using a gas of a material selected from the group consisting of HCL, ClF 3 , C 2 F 6 and SiF 4 ; (a4) selectively depositing a first titanium silicide layer over said silicon layer in said contact opening; said first titanium silicide layer being deposited with an intermediate TiCl 4 to Si containing gas flow ratio between about 0.2 and 10; and (a5) selectively depositing a second titanium silicide layer over said first titanium silicide layer using a selective deposition process with an intermediate TiCl 4 to Si containing gas flow ratio and using a chloride containing gas of a material selected from the group consisting of HCL and ClF 3 ; said first and second titanium silicide layers forming a titanium silicide contact layer; b) forming a barrier layer over said titanium silicide contact layer; said barrier layer is composed of TiN and said barrier layer is formed using a self-aligned nitridation treatment performed insitu using a nitrogen containing gas of a material selected from the group consisting of N 2 or NH 3 , using a plasma process; c) forming a metal plug over said TiN barrier layer; said metal plug composed of a material selected from the group consisting of Al and W.
Claim 12
Independent Claim
285 words
A method of forming a contact structure composed of a titanium silicide layer/TiN bi-layer for contacting a substrate of a semiconductor device; comprising the steps of: a) forming a titanium silicide contact layer on said substrate in said contact opening; said titanium silicide contact layer formed by: (a1) forming first insulating layer having a contact opening over a substrate; (a2) selectively depositing a silicon layer over said substrate in said contact opening; (a3) etching said silicon layer using a gas of a material selected from the group consisting of HCL, ClF 3 , C 2 F 6 and SiF 4 ; (a4) selectively depositing a first titanium silicide layer over said silicon layer in said contact opening; said first titanium silicide layer being deposited with an intermediate TiCl 4 to Si containing gas flow ratio between about 0.2 and 10; and (a5) selectively depositing a second titanium silicide layer over said first titanium silicide layer using a selective deposition process with an intermediate TiCl 4 to Si containing gas flow ratio and using a chloride containing gas of a material selected from the group consisting of HCL and ClF 3 ; said first and second titanium silicide layers forming a titanium silicide contact layer; b) forming a barrier layer over said titanium silicide contact layer; said barrier layer is composed of TiN and said barrier layer is formed using a self-aligned nitridation treatment performed insitu using a nitrogen containing gas of a material selected from the group consisting of N 2 or NH 3 , using a plasma process; c) forming a metal plug over said TiN barrier layer; said metal plug composed of a material selected from the group consisting of Al and W.
Claim 13
Dependent Claim
29 words
The method of claim 9 wherein said barrier layer is composed of Ti--N--O and said barrier layer is formed using a nitridation in a nitrogen and oxygen containing ambient.
Claim 14
Independent Claim
232 words
A method of forming a contact structure composed of a titanium silicide layer/TiN bi-layer for contacting a substrate of a semiconductor device; comprising the steps of: a) forming a titanium silicide contact layer on said substrate in said contact opening; said titanium silicide contact layer formed by: (a1) said titanium silicide contact layer is formed by forming first insulating layer having a contact opening on a substrate; (a2) insitu depositing a first titanium silicide layer with a C49-TiSi x structure over said substrate and depositing a Ti layer over said first insulating layer; (a3) etching said Ti layer to remove said Ti layer over said first insulating layer; and (a4) rapid thermal annealing said first titanium silicide layer with a C49-TiSi x structure to form a titanium silicide contact layer over said substrate in said contact opening; said titanium silicide contact layer composed of titanium suicide having a C54-TiSi 2 structure; b) forming a barrier layer over said titanium silicide contact layer; said barrier layer is composed of TiN and said barrier layer is formed using a self-aligned nitridation treatment performed insitu using a nitrogen containing gas of a material selected from the group consisting of N 2 or NH 3 , using a plasma process; c) forming a metal plug over said TiN barrier layer; said metal plug composed of a material selected from the group consisting of Al and W.
Claim 15
Independent Claim
232 words
A method of forming a contact structure composed of a titanium silicide layer/TiN bi-layer for contacting a substrate of a semiconductor device; comprising the steps of: a) forming a titanium silicide contact layer on said substrate in said contact opening; said titanium silicide contact layer formed by: (a1) said titanium silicide contact layer is formed by forming first insulating layer having a contact opening on a substrate; (a2) insitu depositing a first titanium silicide layer with a C49-TiSi x structure over said substrate and depositing a Ti layer over said first insulating layer; (a3) etching said Ti layer to remove said Ti layer over said first insulating layer; and (a4) rapid thermal annealing said first titanium silicide layer with a C49-TiSi x structure to form a titanium silicide contact layer over said substrate in said contact opening; said titanium silicide contact layer composed of titanium suicide having a C54-TiSi 2 structure; b) forming a barrier layer over said titanium silicide contact layer; said barrier layer is composed of TiN and said barrier layer is formed using a self-aligned nitridation treatment performed insitu using a nitrogen containing gas of a material selected from the group consisting of N 2 or NH 3 , using a plasma process; c) forming a metal plug over said TiN barrier layer; said metal plug composed of a material selected from the group consisting of Al and W.
Claim 16
Dependent Claim
29 words
The method of claim 11 wherein said barrier layer is composed of Ti--N--O and said barrier layer is formed using a nitridation in a nitrogen and oxygen containing ambient.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2003-06-06 | 2003-12-06 | 2004-06-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-06-06 | 2007-12-06 | 2008-06-06 | $3760.00 | Window Closed / Lapsed |
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