US5545592A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Nitrogen treatment for metal-silicide contact
Assignee: Advanced Micro Devices Inc
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Filing: 1995-02-24
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Granted: 1996-08-13
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Expires: 2015-02-24
Abstract
Abstract A low-resistance contact for use in integrated circuits is formed by creating a titanium silicide layer on a semiconductor body and treating the titanium silicide layer with active free nitrogen to form a surface comprised of titanium nitride. This titanium nitride surface is then overlaid with an additional deposition of titanium nitride. Finally, a layer of conductive metal, such as tungsten, is formed over the second titanium nitride layer by chemical vapor deposition. This process eliminates the need for a titanium-metal deposition step and the defects associated with potential reactions between tungsten hexafluoride gas and titanium metal.
Inventors
- 👤 John A. Iacoponi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 13:21
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
92 words
A method for forming a contact to a semiconductor body, said method comprising the steps of: forming a metal silicide layer on said body; exposing said metal silicide layer to nitrogen ionized in a plasma, thereby converting a portion of said metal silicide layer to a first metal nitride layer; depositing a layer of a second metal nitride over said metal silicide layer, such that said second metal nitride layer overlays and engages said first metal nitride layer; and depositing a layer of a second metal over said second metal nitride layer.
Claim 2
Independent Claim
92 words
A method for forming a contact to a semiconductor body, said method comprising the steps of: forming a metal silicide layer on said body; exposing said metal silicide layer to nitrogen ionized in a plasma, thereby converting a portion of said metal silicide layer to a first metal nitride layer; depositing a layer of a second metal nitride over said metal silicide layer, such that said second metal nitride layer overlays and engages said first metal nitride layer; and depositing a layer of a second metal over said second metal nitride layer.
Claim 3
Dependent Claim
37 words
The method of claim 1, further comprising the steps of: depositing a dielectric layer on said metal silicide layer; and etching contact holes through said dielectric layer to uncover a contact area of said metal silicide layer.
Claim 4
Dependent Claim
36 words
The method of claim 1, wherein said forming step comprises: depositing a first metal on said body to form a layer of said first metal on said body; and annealing said layer of said first metal.
Claim 5
Dependent Claim
21 words
The method of claim 1, wherein said metal silicide is titanium silicide, and wherein the second metal nitride is titanium nitride.
Claim 6
Dependent Claim
13 words
The method of claim 2, wherein said dielectric is an oxide of silicon.
Claim 7
Dependent Claim
25 words
The method of claim 1, wherein said active free nitrogen is produced by generating a plasma above said semiconductor body using a nitrogen source gas.
Claim 8
Dependent Claim
22 words
The method of claim 6, wherein said step of exposing is carried out at temperatures of approximately 25° C. to 450° C.
Claim 9
Independent Claim
147 words
A method for forming a contact to a silicide contact area on a surface of a semiconductor body, said method comprising the steps of: forming a titanium silicide layer on said body by depositing titanium on said body to form a titanium layer on said body and annealing said titanium layer; depositing a dielectric layer on said titanium silicide layer; etching contact holes through said dielectric layer to uncover said silicide contact area of said body; generating a plasma of active free nitrogen over said silicide contact area, thereby converting a portion of said silicide contact area to a first layer of titanium nitride; depositing a second layer of titanium nitride, using vapor deposition, over and in physical contact with said dielectric and said first layer of titanium nitride; and depositing a layer of tungsten, by chemical vapor deposition, over said dielectric and said silicide contact area.
Claim 10
Independent Claim
147 words
A method for forming a contact to a silicide contact area on a surface of a semiconductor body, said method comprising the steps of: forming a titanium silicide layer on said body by depositing titanium on said body to form a titanium layer on said body and annealing said titanium layer; depositing a dielectric layer on said titanium silicide layer; etching contact holes through said dielectric layer to uncover said silicide contact area of said body; generating a plasma of active free nitrogen over said silicide contact area, thereby converting a portion of said silicide contact area to a first layer of titanium nitride; depositing a second layer of titanium nitride, using vapor deposition, over and in physical contact with said dielectric and said first layer of titanium nitride; and depositing a layer of tungsten, by chemical vapor deposition, over said dielectric and said silicide contact area.
Claim 11
Dependent Claim
20 words
The method of claim 8, wherein said step of generating a plasma precedes said step of depositing a dielectric layer.
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JPH02231713A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-08-13 | 2000-02-12 | 2000-08-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-08-13 | 2004-02-12 | 2004-08-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-08-13 | 2008-02-12 | 2008-08-13 | $7700.00 | Window Closed / Lapsed |