US5880505A
Expired / Lapsed
US
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C49-structured tungsten-containing titanium salicide structure
Assignee: NEC Electronics Corp
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Filing: 1997-06-02
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Granted: 1999-03-09
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Expires: 2017-06-02
Abstract
Abstract A C49-structured titanium silicide film contains at least a refractory metal having a higher melting point than titanium in the form of a substitutional solid solution, wherein a concentration of the refractory metal to a total amount of titanium and the refractory metal is in the range of above 1 at % to not less than 20 at %. On silicon, there is formed a titanium film which contains at least a refractory metal having a higher melting point than titanium, wherein a concentration of the refractory metal to a total amount of titanium and the refractory metal is in the range of above 1 at % to not less than 20 at %. The titanium film is then subjected to a heat treatment in an inert gas atmosphere for causing a silicidation reaction, thereby to form a C49-structured titanium silicide film which contains the above at least a refractory metal in the form of a substitutional solid solution.
Inventors
- 👤 Kunihiro Fujii
- 👤 Ken Inoue
- 👤 Kuniko Miyakawa
- 👤 Kaoru Mikagi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 04:37
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/069; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0212; H10D62/00; H10D62/80; H10D62/83; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01306; H10D64/01308; H10D64/0131; H10D64/60; H10D64/62; H10D64/66; H10D64/661; H10D64/662; H10D64/663; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0165; H10D84/02; H10D84/03; H10D84/038; H10D30/0223; H10D30/0227
Claims Analysis
Total Claims: 27
Claim 1
Independent Claim
94 words
A titanium salicide structure comprising: a first C49-structured titanium silicide film self-aligned on a polysilicon gate electrode; and second C49-structured titanium silicide films self-aligned on source/drain diffusion regions, wherein each of said first and second C49-structured titanium silicide films contains at least a refractory metal having a higher melting point than titanium in the form of a substitutional solid solution, and wherein a concentration of said refractory metal to a total amount of titanium and said refractory metal is in the range of above 1 at % to not more than 20 at %.
Claim 2
Dependent Claim
94 words
A titanium salicide structure comprising: a first C49-structured titanium silicide film self-aligned on a polysilicon gate electrode; and second C49-structured titanium silicide films self-aligned on source/drain diffusion regions, wherein each of said first and second C49-structured titanium silicide films contains at least a refractory metal having a higher melting point than titanium in the form of a substitutional solid solution, and wherein a concentration of said refractory metal to a total amount of titanium and said refractory metal is in the range of above 1 at % to not more than 20 at %.
Claim 3
Dependent Claim
42 words
The titanium salicide structure as claimed in claim 1, wherein said concentration of said refractory metal to said total amount of titanium and said refractory metal is in the range of above 1 at % to not more than 10 at %.
Claim 4
Dependent Claim
30 words
The titanium salicide structure as claimed in claim 2, wherein said concentration of said refractory metal to said total amount of titanium and said refractory metal is 5 at %.
Claim 5
Dependent Claim
15 words
The titanium salicide structure as claimed in claim 1, wherein said refractory metal is tungsten.
Claim 6
Dependent Claim
32 words
The titanium salicide structure as claimed in claim 1, wherein each of said first and second C49-structured titanium silicide films contains a plurality of refractory metals having higher melting points than titanium.
Claim 7
Dependent Claim
47 words
The titanium salicide structure as claimed in claim 1, wherein each of said first and second C49-structured titanium silicide films shows no phase transition when each of said first and second C49-structured titanium silicide films is subjected to a heat treatment of not less than 800° C.
Claim 8
Dependent Claim
101 words
The titanium salicide structure as claimed in claim 1, wherein each of said first and second C49-structured titanium silicide films further contains an additional refractory metal having a lower melting point than titanium in the form of a substitutional solid solution, provided that said additional refractory metal has a lower concentration than said refractory metal having a higher melting point than titanium so that each of said first and second C49-structured titanium silicide films shows no phase transition when each of said first and second C49-structured titanium silicide films is subjected to a heat treatment of not less than 800° C.
Claim 9
Dependent Claim
31 words
The titanium salicide structure as claimed in claim 1, wherein each of said first and second C49-structured titanium silicide films has a sheet resistance of not more than 50 μΩ cm.
Claim 10
Dependent Claim
111 words
A titanium salicide structure comprising: a first C49-structured titanium silicide film self-aligned on a polysilicon gate electrode; and second C49-structured titanium silicide films self-aligned on source/drain diffusion regions, wherein each of said first and second C49-structured titanium silicide films contains at least a refractory metal having a higher melting point than titanium in the form of a substitutional solid solution, and wherein each of said first and second C49-structured titanium silicide films has a sheet resistance of not more than 60 μΩ cm, and shows no phase transition when each of said first and second C49-structured titanium silicide films is subjected to a heat treatment of not less than 800° C.
Claim 11
Dependent Claim
111 words
A titanium salicide structure comprising: a first C49-structured titanium silicide film self-aligned on a polysilicon gate electrode; and second C49-structured titanium silicide films self-aligned on source/drain diffusion regions, wherein each of said first and second C49-structured titanium silicide films contains at least a refractory metal having a higher melting point than titanium in the form of a substitutional solid solution, and wherein each of said first and second C49-structured titanium silicide films has a sheet resistance of not more than 60 μΩ cm, and shows no phase transition when each of said first and second C49-structured titanium silicide films is subjected to a heat treatment of not less than 800° C.
Claim 12
Dependent Claim
42 words
The titanium salicide structure as claimed in claim 9, wherein a concentration of said refractory metal to a total amount of titanium and said refractory metal is in the range of above 1 at % to not more than 10 at %.
Claim 13
Dependent Claim
30 words
The titanium salicide structure as claimed in claim 10, wherein said concentration of said refractory metal to said total amount of titanium and said refractory metal is 5 at %.
Claim 14
Dependent Claim
15 words
The titanium salicide structure as claimed in claim 9, wherein said refractory metal is tungsten.
Claim 15
Dependent Claim
32 words
The titanium salicide structure as claimed in claim 9, wherein each of said first and second C49-structured titanium silicide films contains a plurality of refractory metals having higher melting points than titanium.
Claim 16
Dependent Claim
62 words
The titanium salicide structure as claimed in claim 9, wherein each of said first and second C49-structured titanium silicide films further contains an additional refractory metal having a lower melting point than titanium in the form of a substitutional solid solution, provided that said additional refractory metal has a lower concentration than said refractory metal having a higher melting point than titanium.
Claim 17
Dependent Claim
124 words
A titanium salicide structure comprising: a first C49-structured titanium silicide film self-aligned on a polysilicon gate electrode; and second C49-structured titanium silicide films self-aligned on source/drain diffusion regions, wherein each of said first and second C49-structured titanium silicide films contains at least a refractory metal having a higher melting point than titanium in the form of a substitutional solid solution, and wherein a concentration of said refractory metal to a total amount of titanium and said refractory metal is not more than 20 at % so that each of said first and second C49-structured titanium silicide films shows no phase transition when each of said first and second C49-structured titanium silicide films is subjected to a heat treatment of not less than 800° C.
Claim 18
Dependent Claim
124 words
A titanium salicide structure comprising: a first C49-structured titanium silicide film self-aligned on a polysilicon gate electrode; and second C49-structured titanium silicide films self-aligned on source/drain diffusion regions, wherein each of said first and second C49-structured titanium silicide films contains at least a refractory metal having a higher melting point than titanium in the form of a substitutional solid solution, and wherein a concentration of said refractory metal to a total amount of titanium and said refractory metal is not more than 20 at % so that each of said first and second C49-structured titanium silicide films shows no phase transition when each of said first and second C49-structured titanium silicide films is subjected to a heat treatment of not less than 800° C.
Claim 19
Dependent Claim
42 words
The titanium salicide structure as claimed in claim 15, wherein said concentration of said refractory metal to said total amount of titanium and said refractory metal is in the range of above 1 at % to not more than 10 at %.
Claim 20
Dependent Claim
30 words
The titanium salicide structure as claimed in claim 16, wherein said concentration of said refractory metal to said total amount of titanium and said refractory metal is 5 at %.
Claim 21
Dependent Claim
15 words
The titanium salicide structure as claimed in claim 15, wherein said refractory metal is tungsten.
Claim 22
Dependent Claim
32 words
The titanium salicide structure as claimed in claim 15, wherein each of said first and second C49-structured titanium silicide films contains a plurality of refractory metals having higher melting points than titanium.
Claim 23
Dependent Claim
101 words
The titanium salicide structure as claimed in claim 15, wherein each of said first and second C49-structured titanium silicide films further contains an additional refractory metal having a lower melting point than titanium in the form of a substitutional solid solution, provided that said additional refractory metal has a lower concentration than said refractory metal having a higher melting point than titanium so that each of said first and second C49-structured titanium silicide films shows no phase transition when each of said first and second C49-structured titanium silicide films is subjected to a heat treatment of not less than 800° C.
Claim 24
Dependent Claim
31 words
The titanium salicide structure as claimed in claim 15, wherein each of said first and second C49-structured titanium silicide films has a sheet resistance of not more than 50 μΩ cm.
Claim 25
Dependent Claim
140 words
A titanium salicide structure comprising: a first C49-structured titanium silicide film self-aligned on a polysilicon gate electrode; and second C49-structured titanium silicide films self-aligned on source/drain diffusion regions, wherein each of said first and second C49-structured titanium silicide films contains tungsten in the form of a substitutional solid solution, and wherein a concentration of tungsten to a total amount of titanium and tungsten is in the range of above 1 at % to not more than 10 at % so that each of said first and second C49-structured titanium silicide films has a sheet resistance of not more than 50 μΩ, and that each of said first and second C49-structured titanium silicide films shows no phase transition when each of said first and second C49-structured titanium silicide films is subjected to a heat treatment of not less than 800° C.
Claim 26
Dependent Claim
140 words
A titanium salicide structure comprising: a first C49-structured titanium silicide film self-aligned on a polysilicon gate electrode; and second C49-structured titanium silicide films self-aligned on source/drain diffusion regions, wherein each of said first and second C49-structured titanium silicide films contains tungsten in the form of a substitutional solid solution, and wherein a concentration of tungsten to a total amount of titanium and tungsten is in the range of above 1 at % to not more than 10 at % so that each of said first and second C49-structured titanium silicide films has a sheet resistance of not more than 50 μΩ, and that each of said first and second C49-structured titanium silicide films shows no phase transition when each of said first and second C49-structured titanium silicide films is subjected to a heat treatment of not less than 800° C.
Claim 27
Dependent Claim
26 words
The titanium salicide structure as claimed in claim 22, wherein said concentration of tungsten to said total amount of titanium and tungsten is 5 at %.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-03-08 | 2002-09-07 | 2003-03-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-03-08 | 2006-09-07 | 2007-03-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-03-08 | 2010-09-07 | 2011-03-09 | $7700.00 | Window Closed / Lapsed |