US5776822A
Expired / Lapsed
US
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Method for fabricating semiconductor device having titanium silicide film
Assignee: Renesas Electronics Corp
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Filing: 1997-01-23
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Granted: 1998-07-07
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Expires: 2017-01-23
Abstract
Abstract In a method for producing a semiconductor device disclosed herein, a titanium film (131) is formed on a silicon layer and a titanium disilicide film (134) of a C49 structure is formed by the first rapid thermal annealing, followed by removing a titanium nitride film (132). The titanium disilicide film (134) thus formed is then subjected to phase transition to form titanium disilicide film (135a) of a C54 structure, and the titanium-excess titanium silicide film (133) is selectively removed by the second wet etching.
Inventors
- 👤 Kunihiro Fujii
- 👤 Hiroshi Ito
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 23:58
CPC Classifications
H; H10; H10P; H10P10/00; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D30/0227; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01306; H10D64/01308; H10D64/0131; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0165; H10D84/0172; H10D84/0174; H10D84/02; H10D84/03; H10D84/038
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
249 words
A method for producing a semiconductor device comprising the steps of: forming a field oxide film in an element separating region on the surface of a silicon substrate having a region of one conductivity type; forming a gate oxide film in an element forming region on the surface of said silicon substrate; forming a poly-crystal silicon film pattern in a region on the surface of said silicon substrate where a gate electrode is formed; forming a side-wall spacer consisting of an insulating film on the side wall of said poly-crystal silicon film pattern; forming a diffusion layer of an opposite conductivity type and self-aligned with said side-wall spacer on the surface of said region of one conductivity type; forming a titanium film over the surface of said field oxide film, said poly-crustal silicon film pattern, said diffusion layer, and said sidewall spacer; forming a titanium disilicide film of the C49 structure selectively on an upper surface of said poly-crystal silicon pattern and a surface of said diffusion layer of the opposite conductivity type by a first rapid thermal annealing in a nitrogen atmosphere; removing a titanium nitride film by a first wet etching; converting said titanium disilicide film of the C49 structure to a titanium disilicide film of the C54 structure by a second rapid thermal annealing; and selectively removing a titanium silicide film formed on the surface of said field oxide film and the surface of said side-wall spacer by a second wet etching after said converting step.
Claim 2
Independent Claim
249 words
A method for producing a semiconductor device comprising the steps of: forming a field oxide film in an element separating region on the surface of a silicon substrate having a region of one conductivity type; forming a gate oxide film in an element forming region on the surface of said silicon substrate; forming a poly-crystal silicon film pattern in a region on the surface of said silicon substrate where a gate electrode is formed; forming a side-wall spacer consisting of an insulating film on the side wall of said poly-crystal silicon film pattern; forming a diffusion layer of an opposite conductivity type and self-aligned with said side-wall spacer on the surface of said region of one conductivity type; forming a titanium film over the surface of said field oxide film, said poly-crustal silicon film pattern, said diffusion layer, and said sidewall spacer; forming a titanium disilicide film of the C49 structure selectively on an upper surface of said poly-crystal silicon pattern and a surface of said diffusion layer of the opposite conductivity type by a first rapid thermal annealing in a nitrogen atmosphere; removing a titanium nitride film by a first wet etching; converting said titanium disilicide film of the C49 structure to a titanium disilicide film of the C54 structure by a second rapid thermal annealing; and selectively removing a titanium silicide film formed on the surface of said field oxide film and the surface of said side-wall spacer by a second wet etching after said converting step.
Claim 3
Dependent Claim
31 words
The method as claimed in claim 1, wherein said first wet etching is performed by a mixed solution of sulfuric acid and hydrogen peroxide to selectively remove said titanium nitride film.
Claim 4
Dependent Claim
24 words
The method as claimed in claim 1, wherein said second wet etching is performed by a mixed solution of ammonia water and hydrogen peroxide.
Claim 5
Dependent Claim
28 words
The method of claim 3, wherein the mixed solution of the second wet etching has an NH 4 OH:H 2 O 2 :H 2 O ratio of 1:1:5.
Claim 6
Dependent Claim
29 words
The method of claim 3, wherein the first wet etching is performed using a mixed solution of ammonia water and hydrogen peroxide to selectively remove said titanium nitride film.
Claim 7
Dependent Claim
15 words
The method of claim 5, wherein the second wet etching is performed for 20 minutes.
Claim 8
Dependent Claim
15 words
The method of claim 5, wherein the second wet etching is performed at room temperature.
Claim 9
Dependent Claim
15 words
The method of claim 5, wherein the first wet etching is performed for 3-10 minutes.
Claim 10
Dependent Claim
28 words
The method of claim 5, wherein the mixed solution of the first wet etching has an NH 4 OH:H 2 O 2 :H 2 O ratio of 1:1:5.
Claim 11
Dependent Claim
29 words
The method of claim 3, wherein the first wet etching is performed using a mixed solution of sulfuric acid and hydrogen peroxide to selectively remove said titanium nitride film.
Claim 12
Dependent Claim
15 words
The method of claim 10, wherein the second wet etching is performed for 30 minutes.
Claim 13
Dependent Claim
15 words
The method of claim 10, wherein the first wet etching is performed at 140° C.
Claim 14
Dependent Claim
15 words
The method of claim 10, wherein the first wet etching is performed for 10-20 minutes.
Claim 15
Dependent Claim
27 words
The method of claim 10, wherein the mixed solution of the first wet etching has an H 2 SO 4 :H 2 O 2 ratio of 5:1.
Claim 16
Dependent Claim
29 words
The method of claim 3, wherein the first wet etching is performed using a mixed solution of hydrochloric acid and hydrogen peroxide to selectively remove said titanium nitride film.
Claim 17
Dependent Claim
29 words
The method of claim 3, wherein the first wet etching is performed using a mixed solution of nitric acid and hydrogen peroxide to selectively remove said titanium nitride film.
Claim 18
Dependent Claim
29 words
The method of claim 3, wherein the first wet etching is performed using a mixed solution of phosphoric acid and hydrogen peroxide to selectively remove said titanium nitride film.
Claim 19
Dependent Claim
16 words
The method of claim 1, wherein the first rapid thermal annealing is performed at 690° C.
Claim 20
Dependent Claim
17 words
The method of claim 1, wherein the first rapid thermal annealing is performed for approximately 30 seconds.
Claim 21
Dependent Claim
17 words
The method of claim 1, wherein the second rapid thermal annealing is performed at approximately 850° C.
Claim 22
Dependent Claim
17 words
The method of claim 1, wherein the second rapid thermal annealing is performed for approximately 10 seconds.
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