US5103272A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device and a method for manufacturing the same
Assignee: Toshiba Corp
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Filing: 1990-03-20
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Granted: 1992-04-07
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Expires: 2010-03-20
Abstract
Abstract A MOS transistor has a gate electrode, a source region and a drain region formed on a substrate. A titanium silicide film is formed above the gate electrode and the source and drain regions. A titanium nitride layer whose melting point is higher than that of the silicide film is formed between the substrate and the titanium silicide film. The nitride layer prevents the silicide film from agglomerating during the thermal treatment in a manufacturing process. The nitride layer is formed by implanting nitrogen ions into the silicide film and performing and annealing treatment.
Inventors
- 👤 Akira Nishiyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 10:29
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; H10D62/00; H10D62/80; H10D62/83; H10D64/60; H10D64/62; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6316; Y; Y10; Y10S; Y10S257/00; Y10S257/915
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
68 words
A semiconductor device comprising: a gate electrode, a source region and a drain region formed on a semiconductor substrate; a metal silicide layer formed above said source region and said drain region; and a metal nitride layer formed between said source region and said metal silicide layer and between said drain region and said metal silicide layer, wherein the metal silicide layer completely covers the metal nitride layer.
Claim 2
Dependent Claim
68 words
A semiconductor device comprising: a gate electrode, a source region and a drain region formed on a semiconductor substrate; a metal silicide layer formed above said source region and said drain region; and a metal nitride layer formed between said source region and said metal silicide layer and between said drain region and said metal silicide layer, wherein the metal silicide layer completely covers the metal nitride layer.
Claim 3
Dependent Claim
22 words
The semiconductor device according to claim 1, wherein said metal nitride layer and said metal silicide layer have the same metal component.
Claim 4
Dependent Claim
23 words
The semiconductor device according to claim 1, wherein said metal nitride layer and said metal silicide layer are provided on said gate electrode.
Claim 5
Dependent Claim
13 words
The semiconductor device according to claim 2, wherein said metal component is titanium.
Claim 6
Dependent Claim
15 words
The semiconductor device according to claim 1, wherein said device is a P-channel MOS transistor.
Claim 7
Dependent Claim
15 words
The semiconductor device according to claim 1, wherein said metal nitride layer includes silicon crystallite.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-04-07 | 1995-10-07 | 1996-04-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-04-07 | 1999-10-07 | 2000-04-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-04-07 | 2003-10-07 | 2004-04-07 | $7700.00 | Window Closed / Lapsed |