Patent US6475911B1 successfully refreshed from Google Patents.
US6475911B1
Expired / Lapsed
US
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Method of forming noble metal pattern
Assignee: Samsung Electronics Co Ltd
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Filing: 2000-08-16
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Granted: 2002-11-05
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Expires: 2020-08-16
Abstract
Abstract A process for high resolution patterning of noble metals, such as platinum, for forming various semiconductor devices, such as capacitors or wiring patterns, is disclosed. A layer of noble metal, which will form an upper electrode of a capacitor, is formed over a dielectric layer. A mask layer is then formed over the noble metal layer and patterned to leave a portion of the noble metal layer exposed. The portion of the exposed noble metal is subsequently converted to its silicide, the noble metal silicide is then etched and the dielectric layer is removed, leaving the noble metal layer patterned in an upper electrode of an IC capacitor.
Inventors
- 👤 Richard H. Lane
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:42
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/064; H10W20/066; H10D1/682; H10P; H10P50/00; H10P50/20; H10P50/26; H10P50/264; H10P50/266; H10P50/267; H10P50/268
Claims Analysis
Total Claims: 49
Claim 1
Independent Claim
93 words
A method of forming a semiconductor device, comprising the steps of: forming a metal layer over an insulating layer provided over a semiconductor substrate, said metal layer comprising a material selected from the group consisting of platinum, iridium, iridium oxide, ruthenium, ruthenium oxide, rhodium, osmium, osmium oxide, silver and gold; forming a protective layer over at least one portion of said metal layer, leaving at least another portion of said metal layer exposed; converting said at least another portion of said metal layer exposed to a metal silicide; and removing said metal silicide.
Claim 2
Independent Claim
93 words
A method of forming a semiconductor device, comprising the steps of: forming a metal layer over an insulating layer provided over a semiconductor substrate, said metal layer comprising a material selected from the group consisting of platinum, iridium, iridium oxide, ruthenium, ruthenium oxide, rhodium, osmium, osmium oxide, silver and gold; forming a protective layer over at least one portion of said metal layer, leaving at least another portion of said metal layer exposed; converting said at least another portion of said metal layer exposed to a metal silicide; and removing said metal silicide.
Claim 3
Dependent Claim
14 words
The method of claim 1 , wherein said metal layer is a platinum layer.
Claim 4
Dependent Claim
23 words
The method of claim 2 , wherein said platinum layer is formed by deposition to a thickness of approximately 50 to 300 Angstroms.
Claim 5
Dependent Claim
17 words
The method of claim 2 , wherein said platinum layer has a thickness of approximately 100 Angstroms.
Claim 6
Dependent Claim
34 words
The method of claim 1 , wherein said protective layer is formed of a material selected from the group consisting of low silane oxide, silicon oxide, silicon, titanium nitride, titanium, tantalum nitride and tantalum.
Claim 7
Dependent Claim
16 words
The method of claim 1 , wherein said protective layer is a low silane oxide layer.
Claim 8
Dependent Claim
15 words
The method of claim 1 , wherein said protective layer is a titanium nitride layer.
Claim 9
Dependent Claim
15 words
The method of claim 1 , wherein said protective layer is a tantalum nitride layer.
Claim 10
Dependent Claim
15 words
The method of claim 1 , wherein said protective layer is a silicon oxide layer.
Claim 11
Dependent Claim
30 words
The method of claim 1 , wherein said step of converting said at least another portion of said metal layer exposed to a metal silicide is achieved by applying silicon.
Claim 12
Dependent Claim
39 words
The method of claim 10 , said step of converting said at least another portion of said metal layer exposed to a metal silicide is further achieved by annealing at a temperature of approximately 400° C. to 600° C.
Claim 13
Dependent Claim
32 words
The method of claim 11 , wherein said step of converting said at least another portion of said metal layer exposed is achieved by annealing at a temperature of about 450° C.
Claim 14
Dependent Claim
15 words
The method of claim 1 , wherein said metal silicide is a noble metal silicide.
Claim 15
Dependent Claim
16 words
The method of claim 1 , wherein said metal silicide is a noble metal alloy silicide.
Claim 16
Dependent Claim
13 words
The method of claim 1 , wherein said metal silicide is platinum silicide.
Claim 17
Dependent Claim
21 words
The method of claim 1 , wherein said step of removing said metal silicide is achieved by etching said metal silicide.
Claim 18
Dependent Claim
14 words
The method of claim 1 further comprising the step of removing said protective layer.
Claim 19
Dependent Claim
19 words
The method of claim 1 , wherein said metal layer forms an upper capacitor electrode of said semiconductor device.
Claim 20
Independent Claim
97 words
A method of forming an upper capacitor electrode on a semiconductor substrate, comprising the steps of: forming a dielectric layer over a lower capacitor electrode provided over said semiconductor substrate, said dielectric layer comprising a material selected from the group consisting of ferroelectric materials and high-dielectric constant materials; forming a metal layer over said dielectric layer; forming a protective layer over portions of said metal layer, leaving at least other portions of said metal layer exposed; converting to a metal silicide at least one of said exposed portions of said metal layer; and removing said metal silicide.
Claim 21
Independent Claim
97 words
A method of forming an upper capacitor electrode on a semiconductor substrate, comprising the steps of: forming a dielectric layer over a lower capacitor electrode provided over said semiconductor substrate, said dielectric layer comprising a material selected from the group consisting of ferroelectric materials and high-dielectric constant materials; forming a metal layer over said dielectric layer; forming a protective layer over portions of said metal layer, leaving at least other portions of said metal layer exposed; converting to a metal silicide at least one of said exposed portions of said metal layer; and removing said metal silicide.
Claim 22
Dependent Claim
28 words
The method of claim 19 , wherein said metal layer contains a material selected from the group consisting of noble metals, noble metal alloys and noble metal oxides.
Claim 23
Dependent Claim
15 words
The method of claim 20 , wherein said metal layer is a noble metal layer.
Claim 24
Dependent Claim
14 words
The method of claim 21 , wherein said metal layer is a platinum layer.
Claim 25
Dependent Claim
23 words
The method of claim 22 , wherein said platinum layer is formed by deposition to a thickness of approximately 50 to 300 Angstroms.
Claim 26
Dependent Claim
17 words
The method of claim 23 , wherein said platinum layer has a thickness of approximately 100 Angstroms.
Claim 27
Dependent Claim
16 words
The method of claim 19 , wherein said metal layer is a noble metal alloy layer.
Claim 28
Dependent Claim
16 words
The method of claim 19 , wherein said metal layer is a noble metal oxide layer.
Claim 29
Dependent Claim
34 words
The method of claim 19 , wherein said protective layer is formed of a material selected from the group consisting of low silane oxide, silicon oxide, silicon, titanium nitride, titanium, tantalum nitride and tantalum.
Claim 30
Dependent Claim
16 words
The method of claim 19 , wherein said protective layer is a low silane oxide layer.
Claim 31
Dependent Claim
15 words
The method of claim 19 , wherein said protective layer is a titanium nitride layer.
Claim 32
Dependent Claim
15 words
The method of claim 19 , wherein said protective layer is a tantalum nitride layer.
Claim 33
Dependent Claim
15 words
The method of claim 19 , wherein said protective layer is a silicon oxide layer.
Claim 34
Dependent Claim
31 words
The method of claim 19 , wherein said step of converting to said metal silicide said least one of said exposed portions of said metal layer is achieved by applying silicon.
Claim 35
Dependent Claim
40 words
The method of claim 19 , wherein said step of converting to said metal silicide said least one of said exposed portions of said metal layer is achieved by annealing at a temperature of approximately 400° C. to 600° C.
Claim 36
Dependent Claim
36 words
The method of claim 19 , wherein said step of converting to metal silicide said least one of said exposed portions of said metal layer is achieved by annealing at a temperature of about 450° C.
Claim 37
Dependent Claim
21 words
The method of claim 19 , wherein said step of removing said metal silicide is achieved by etching said metal silicide.
Claim 38
Dependent Claim
15 words
The method of claim 19 , wherein said metal silicide is a noble metal silicide.
Claim 39
Dependent Claim
16 words
The method of claim 19 , wherein said metal silicide is a noble metal alloy silicide.
Claim 40
Dependent Claim
13 words
The method of claim 19 , wherein said metal silicide is platinum silicide.
Claim 41
Dependent Claim
28 words
The method of claim 19 , wherein said lower capacitor electrode is formed of a material selected from the group consisting of metals, noble metals and doped polysilicon.
Claim 42
Independent Claim
79 words
A method of forming an upper capacitor electrode on a semiconductor substrate, comprising the steps of: forming a dielectric layer over a lower capacitor electrode provided over said semiconductor substrate; forming a platinum layer over said dielectric layer; forming a protective layer over portions of said platinum layer, leaving at least other portions of said platinum layer exposed; converting to a platinum silicide at least one of said exposed portions of said platinum layer; and removing said platinum silicide.
Claim 43
Independent Claim
79 words
A method of forming an upper capacitor electrode on a semiconductor substrate, comprising the steps of: forming a dielectric layer over a lower capacitor electrode provided over said semiconductor substrate; forming a platinum layer over said dielectric layer; forming a protective layer over portions of said platinum layer, leaving at least other portions of said platinum layer exposed; converting to a platinum silicide at least one of said exposed portions of said platinum layer; and removing said platinum silicide.
Claim 44
Dependent Claim
34 words
The method of claim 40 , wherein said protective layer is formed of a material selected from the group consisting of low silane oxide, silicon oxide, silicon, titanium nitride titanium, tantalum nitride and tantalum.
Claim 45
Dependent Claim
28 words
The method of claim 40 , wherein said lower capacitor electrode is formed of a material selected from the group consisting of metals, noble metals and doped polysilicon.
Claim 46
Independent Claim
105 words
A method of forming an upper capacitor electrode on a semiconductor substrate, comprising the steps of: forming a dielectric layer over a lower capacitor electrode provided over said semiconductor substrate; forming a metal layer over said dielectric layer, said metal layer comprising a material selected from the group consisting of platinum, iridium, iridium oxide, ruthenium, ruthenium oxide, rhodium, osmium, osmium oxide, silver and gold; forming a protective layer over portions of said metal layer, leaving at least other portions of said metal layer exposed; converting to a metal silicide at least one of said exposed portions of said metal layer; and removing said metal silicide.
Claim 47
Independent Claim
105 words
A method of forming an upper capacitor electrode on a semiconductor substrate, comprising the steps of: forming a dielectric layer over a lower capacitor electrode provided over said semiconductor substrate; forming a metal layer over said dielectric layer, said metal layer comprising a material selected from the group consisting of platinum, iridium, iridium oxide, ruthenium, ruthenium oxide, rhodium, osmium, osmium oxide, silver and gold; forming a protective layer over portions of said metal layer, leaving at least other portions of said metal layer exposed; converting to a metal silicide at least one of said exposed portions of said metal layer; and removing said metal silicide.
Claim 48
Dependent Claim
34 words
The method of claim 43 , wherein said protective layer is formed of a material selected from the group consisting of low silane oxide, silicon oxide, silicon, titanium nitride, titanium, tantalum nitride and tantalum.
Claim 49
Dependent Claim
28 words
The method of claim 43 , wherein said lower capacitor electrode is formed of a material selected from the group consisting of metals, noble metals and doped polysilicon.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2005-11-04 | 2006-05-06 | 2006-11-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-11-04 | 2010-05-06 | 2010-11-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-11-04 | 2014-05-06 | 2014-11-05 | $7700.00 | Window Closed / Lapsed |