US6136659A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Production process for a capacitor electrode formed of a platinum metal
Assignee: Polaris Innovations Ltd
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Filing: 1998-03-25
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Granted: 2000-10-24
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Expires: 2018-03-25
Abstract
Abstract A production process for a capacitor electrode formed of a platinum metal includes producing a conductive electrode body on a substrate having a silicon-containing surface for the capacitor electrode. Platinum is deposited over the full surface, the platinum is silicized in a temperature step outside the electrode body and the platinum silicide is removed. The advantage of the invention is the avoidance of an etching process for metallic platinum.
Inventors
- 👤 Gunther Schindler
- 👤 Walter Hartner
- 👤 Volker Weinrich
- 👤 Carlos Mazure-Espejo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:39
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D1/694; H10B; H10B12/00; H10B12/30; H10B12/31; H10P; H10P50/00; H10P50/20; H10P50/26; H10P50/264; H10P50/266; H10P50/267; H10P50/268
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
110 words
A production process for a capacitor electrode formed of a platinum metal in an integrated semiconductor circuit, which comprises: producing a substrate for a capacitor electrode having a silicon-containing surface; producing a conductive electrode body on the silicon-containing surface, the electrode body forming a part of the capacitor electrode and substantially having a geometrical shape of the capacitor electrode to be created, for exposing the silicon-containing surface adjacent the electrode body; depositing a layer of a platinum metal; performing a temperature step for silicizing a region of the platinum metal resting on the silicon-containing surface thereby producing a platinum metal silicide in said region; and removing the platinum metal silicide.
Claim 2
Dependent Claim
110 words
A production process for a capacitor electrode formed of a platinum metal in an integrated semiconductor circuit, which comprises: producing a substrate for a capacitor electrode having a silicon-containing surface; producing a conductive electrode body on the silicon-containing surface, the electrode body forming a part of the capacitor electrode and substantially having a geometrical shape of the capacitor electrode to be created, for exposing the silicon-containing surface adjacent the electrode body; depositing a layer of a platinum metal; performing a temperature step for silicizing a region of the platinum metal resting on the silicon-containing surface thereby producing a platinum metal silicide in said region; and removing the platinum metal silicide.
Claim 3
Dependent Claim
46 words
The production process according to claim 1, which comprises etching a contact hole to the substrate before producing the electrode body for receiving a connection structure in the contact hole, and extending the contact hole down to a conductive structure located below said silicon containing surface.
Claim 4
Dependent Claim
21 words
The production process according to claim 1, which comprises providing a silicon layer as said silicon containing surface of said substrate.
Claim 5
Dependent Claim
21 words
The production process according to claim 3, which comprises creating an oxide layer as a guard layer on the silicon layer.
Claim 6
Dependent Claim
21 words
The production process according to claim 3, which comprises applying an etch stop layer to the substrate beneath the silicon layer.
Claim 7
Dependent Claim
24 words
The production process according to claim 1, which comprises producing a barrier layer for preventing oxygen diffusion, before the platinum metal layer is deposited.
Claim 8
Dependent Claim
36 words
The production process according to claim 2, which comprises depositing a barrier layer over the entire surface after the contact hole is produced, and forming the connection structure and the electrode body from the barrier layer.
Claim 9
Dependent Claim
53 words
The production process according to claim 2, which comprises applying a conductive layer over the entire surface and etching back the conductive layer to the connection structure after the contact hole is produced, and then applying a barrier layer over the entire surface and structuring the barrier layer to form the electrode body.
Claim 10
Dependent Claim
54 words
The production process according to claim 2, which comprises applying a conductive layer entirely over said silicon-containing surface after the contact hole is produced, forming the connection structure and the electrode body from the conductive layer, and then forming an oxygen barrier on the exposed surface of the electrode body in a temperature process.
Claim 11
Dependent Claim
25 words
The production process according to claim 2, which comprises producing an oxygen diffusion barrier on side walls of the electrode body with a spacer technique.
Claim 12
Dependent Claim
97 words
A production process for a capacitor electrode formed of a platinum metal in an integrated semiconductor circuit, which comprises: producing a substrate with an insulation layer and applying a silicon layer on the insulation layer; creating an opening in the silicon layer having lateral dimensions substantially equal to lateral dimensions of a capacitor electrode to be created; depositing a layer of a platinum metal; performing a temperature step for silicizing a region of the platinum metal layer resting on the silicon layer thereby producing a platinum metal silicide in said region; and removing the platinum metal silicide.
Claim 13
Dependent Claim
97 words
A production process for a capacitor electrode formed of a platinum metal in an integrated semiconductor circuit, which comprises: producing a substrate with an insulation layer and applying a silicon layer on the insulation layer; creating an opening in the silicon layer having lateral dimensions substantially equal to lateral dimensions of a capacitor electrode to be created; depositing a layer of a platinum metal; performing a temperature step for silicizing a region of the platinum metal layer resting on the silicon layer thereby producing a platinum metal silicide in said region; and removing the platinum metal silicide.
Claim 14
Dependent Claim
31 words
The production process according to claim 1, which comprises subsequently applying a ferroelectric or a paraelectric over the created capacitor electrode, and applying another capacitor electrode over the ferroelectric or paraelectric.
Claim 15
Dependent Claim
31 words
The production process according to claim 11, which comprises subsequently applying a ferroelectric or a paraelectric over the created capacitor electrode, and applying another capacitor electrode over the ferroelectric or paraelectric.
Claim 16
Dependent Claim
15 words
The production process according to claim 1, which comprises depositing platinum as the platinum metal.
Claim 17
Dependent Claim
15 words
The production process according to claim 11, which comprises depositing platinum as the platinum metal.
Claim 18
Dependent Claim
17 words
The production process according to claim 1, which comprises producing a memory cell with the production process.
Claim 19
Dependent Claim
17 words
The production process according to claim 11, which comprises producing a memory cell with the production process.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-10-24 | 2004-04-24 | 2004-10-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-10-24 | 2008-04-24 | 2008-10-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-10-24 | 2012-04-24 | 2012-10-24 | $7700.00 | Window Closed / Lapsed |