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US6472306B1
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Method of forming a dual damascene opening using CVD Low-K material and spin-on-polymer
Assignee: Industrial Technology Research Institute
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Filing: 2000-09-05
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Granted: 2002-10-29
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Expires: 2020-09-05
Abstract
Abstract A method of forming a dual damascene opening, comprising the following steps. A semiconductor structure having at least one exposed metal line is provided. A spin-on-polymer layer is formed over the semiconductor structure and the metal line. A CVD low-k material layer is formed over the spin-on-polymer layer. The CVD low-k material layer is patterned to form a CVD low-k material layer via over the metal line. The spin-on-polymer layer is patterned to form a spin-on-polymer layer via opening continuous and contiguous with the CVD low-k material layer via and exposing a portion of the metal line. The CVD low-k material layer adjacent the CVD low-k material layer via is patterned to form a CVD low-k material layer trench. The spin-on-polymer layer via opening and the CVD low-k material layer trench forming a dual damascene opening.
Inventors
- 👤 Shyh-Dar Lee
- 👤 Chung-I Chang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 15:02
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/081; H10W20/084; H10W20/085
Claims Analysis
Total Claims: 40
Claim 1
Independent Claim
131 words
A method of forming a dual damascene opening, comprising the steps of: providing a semiconductor structure having at least one exposed metal line; forming a spin-on-polymer layer over said semiconductor structure and said metal line; forming a CVD dielectric material layer upon said spin-on-polymer layer; patterning said CVD dielectric material layer to form a CVD dielectric material layer via over said metal line; patterning said spin-on-polymer layer to form a spin-on-polymer layer via opening continuous and contiguous with said CVD dielectric material layer via and exposing a portion of said metal line; and patterning said CVD dielectric material layer adjacent said CVD dielectric material layer via to form a CVD dielectric material layer trench; said spin-on-polymer layer via opening and said CVD dielectric material layer trench forming a dual damascene opening.
Claim 2
Independent Claim
131 words
A method of forming a dual damascene opening, comprising the steps of: providing a semiconductor structure having at least one exposed metal line; forming a spin-on-polymer layer over said semiconductor structure and said metal line; forming a CVD dielectric material layer upon said spin-on-polymer layer; patterning said CVD dielectric material layer to form a CVD dielectric material layer via over said metal line; patterning said spin-on-polymer layer to form a spin-on-polymer layer via opening continuous and contiguous with said CVD dielectric material layer via and exposing a portion of said metal line; and patterning said CVD dielectric material layer adjacent said CVD dielectric material layer via to form a CVD dielectric material layer trench; said spin-on-polymer layer via opening and said CVD dielectric material layer trench forming a dual damascene opening.
Claim 3
Dependent Claim
53 words
The method of claim 1 , wherein said SOP layer is formed using a spin coater with a baking step at from about 50 to 280° C. for from about 10 to 90 seconds followed by a curing step at from about 300 to 450° C. for from about 30 to 90 minutes.
Claim 4
Dependent Claim
32 words
The method of claim 1 , wherein said CVD dielectric layer includes from about 5 to 50% by FTIR; from about 10 to 30% oxygen; and from about 10 to 30% hydrogen.
Claim 5
Dependent Claim
32 words
The method of claim 1 , wherein said spin-on-polymer layer is from about 1000 to 9000 Å thick, and said CVD dielectric material layer is from about 1000 to 9000 Å thick.
Claim 6
Dependent Claim
34 words
The method of claim 1 , wherein said spin-on-polymer layer 106 is from about 3000 to 6000 Å thick, and said CVD dielectric material layer 108 is from about 3000 to 6000 Å thick.
Claim 7
Dependent Claim
33 words
The method of claim 1 , including the steps of: forming a sealing layer over said semiconductor structure and said metal line; and forming an anti-reflection layer over said CVD dielectric material layer.
Claim 8
Dependent Claim
28 words
The method of claim 1 , wherein said spin-on-polymer layer is comprised of a material selected from the group comprising SiLK, FLARE, and CH 3 —SiO 2 .
Claim 9
Dependent Claim
28 words
The method of claim 1 , wherein said spin-on-polymer layer is comprised of the elements C, H, O, and Si with at least an arylate series functional group.
Claim 10
Dependent Claim
33 words
The method of claim 1 , wherein said CVD dielectric material layer is comprised of a material selected from the group comprising BD, silicon oxide, Coral™, povA, Greendot™, and carbon doped silicon oxide.
Claim 11
Dependent Claim
17 words
The method of claim 1 , wherein said CVD dielectric material layer is comprised of silicon oxide.
Claim 12
Dependent Claim
145 words
The method of claim 1 , wherein said SOP layer has the following characteristics: 1) RI is from about 1.35 to 1.43; 2) carbon content by FTIR is from about 30 to 65%; 3) oxygen content is from about 10 to 30%; 4) hydrogen content is from about 30 to 65%; 5) silicon content is from about 1 to 10%; 6) hardness is from about 0.5 to 3 Gpa; 7) density is from about 1.5 to 1.8 g/cm 3 ; 8) dielectric constant is from about 2.0 to 2.9; 9) stress is from about compressive 10E −8 to tensile 10E −8 ; 10) breakdown voltage is from about 2 to 9 MV/cm at 10 −3 A/cm 2 ; 11) leakage current at 0.5 MV/cm is from about <10 −10 to 10 −12 A/cm 2 ; and 12) extinction coefficient is from about 0 to 1.
Claim 13
Dependent Claim
135 words
The method of claim 1 , wherein said CVD dielectric layer has the following characteristics: 1) RI is from about 1.30 to 1.67; 2) carbon content by FTIR is from about 5 to 50%; 3) oxygen content is from about 10 to 30%; 4) hydrogen content is from about 10 to 30%; 5) modulus is from about 40 to 70 Gpa; 6) hardness is from about 0.5 to 7 Gpa; 7) density is from about 1.5 to 1.8 g/cm 3 ; 8) dielectric constant is from about 2.2 to 3.3; 9) film stress is from about 30 to 100 Mpa tensile; 10) breakdown voltage is from about 2 to 9 MV/cm at 10 −3 A/cm 2 ; and 11) leakage current at 0.5 MV/cm is from about <10 −10 to 10 −12 A/cm 2 .
Claim 14
Independent Claim
157 words
A method of forming a dual damascene opening, comprising the steps of: providing a semiconductor structure having at least one exposed metal line; forming a sealing layer over said semiconductor structure and said metal line; forming a spin-on-polymer layer over said sealing layer; forming a CVD dielectric material layer upon said spin-on-polymer layer; forming an anti-reflection layer over said CVD dielectric material layer; patterning said anti-reflection layer and said CVD dielectric material layer to form a CVD dielectric material layer via over said metal line; patterning said spin-on-polymer layer to form a spin-on-polymer layer via opening continuous and contiguous with said CVD dielectric material layer via and exposing a portion of said metal line; and patterning said anti-reflection layer and said CVD dielectric material layer adjacent said CVD low-k material layer via to form a CVD dielectric material layer trench; said spin-on-polymer layer via opening and said CVD dielectric material layer trench forming a dual damascene opening.
Claim 15
Independent Claim
157 words
A method of forming a dual damascene opening, comprising the steps of: providing a semiconductor structure having at least one exposed metal line; forming a sealing layer over said semiconductor structure and said metal line; forming a spin-on-polymer layer over said sealing layer; forming a CVD dielectric material layer upon said spin-on-polymer layer; forming an anti-reflection layer over said CVD dielectric material layer; patterning said anti-reflection layer and said CVD dielectric material layer to form a CVD dielectric material layer via over said metal line; patterning said spin-on-polymer layer to form a spin-on-polymer layer via opening continuous and contiguous with said CVD dielectric material layer via and exposing a portion of said metal line; and patterning said anti-reflection layer and said CVD dielectric material layer adjacent said CVD low-k material layer via to form a CVD dielectric material layer trench; said spin-on-polymer layer via opening and said CVD dielectric material layer trench forming a dual damascene opening.
Claim 16
Dependent Claim
53 words
The method of claim 13 , wherein said SOP layer is formed using a spin coater with a baking step at from about 50 to 280° C. for from about 10 to 90 seconds followed by a curing step at from about 300 to 450° C. for from about 30 to 90 minutes.
Claim 17
Dependent Claim
32 words
The method of claim 13 , wherein said CVD dielectric layer includes from about 5 to 50% by FTIR; from about 10 to 30% oxygen; and from about 10 to 30% hydrogen.
Claim 18
Dependent Claim
32 words
The method of claim 13 , wherein said spin-on-polymer layer is from about 1000 to 9000 Å thick, and said CVD dielectric material layer is from about 1000 to 9000 Å thick.
Claim 19
Dependent Claim
33 words
The method of claim 13 , wherein said spin-on-polymer layer is from about 3000 to 6000 Å thick, and said CVD dielectric material layer 108 is from about 3000 to 6000 Å thick.
Claim 20
Dependent Claim
28 words
The method of claim 13 , wherein said spin-on-polymer layer is comprised of a material selected from the group comprising SiLK, FLARE, and CH 3 —SiO 2 .
Claim 21
Dependent Claim
28 words
The method of claim 13 , wherein said spin-on-polymer layer is comprised of the elements C, H, O, and Si with at least an arylate series functional group.
Claim 22
Dependent Claim
33 words
The method of claim 13 , wherein said CVD dielectric material layer is comprised of a material selected from the group comprising BD, silicon oxide, Coral™, povA, Greendot™, and carbon doped silicon oxide.
Claim 23
Dependent Claim
17 words
The method of claim 13 , wherein said CVD dielectric material layer is comprised of silicon oxide.
Claim 24
Dependent Claim
15 words
The method of claim 13 , wherein said sealing layer is comprised of silicon nitride.
Claim 25
Dependent Claim
14 words
The method of claim 13 , wherein said anti-reflection layer is comprised of SiON.
Claim 26
Independent Claim
158 words
A method of forming a dual damascene opening, comprising the steps of: providing a semiconductor structure having at least one exposed metal line; forming a silicon nitride layer over said semiconductor structure and said metal line; forming a spin-on-polymer layer over said sealing layer; forming a CVD dielectric material layer upon said spin-on-polymer layer; forming an SiON layer over said CVD dielectric material layer; patterning said SiON layer and said CVD dielectric material layer to form a CVD dielectric material layer via over said metal line; patterning said spin-on-polymer layer to form a spin-on-polymer layer via opening continuous and contiguous with said CVD dielectric material layer via and exposing a portion of said metal line; and patterning said SiON layer and said CVD dielectric material layer adjacent said CVD dielectric material layer via to form a CVD dielectric material layer trench; said spin-on-polymer layer via opening and said CVD dielectric material layer trench forming a dual damascene opening.
Claim 27
Independent Claim
158 words
A method of forming a dual damascene opening, comprising the steps of: providing a semiconductor structure having at least one exposed metal line; forming a silicon nitride layer over said semiconductor structure and said metal line; forming a spin-on-polymer layer over said sealing layer; forming a CVD dielectric material layer upon said spin-on-polymer layer; forming an SiON layer over said CVD dielectric material layer; patterning said SiON layer and said CVD dielectric material layer to form a CVD dielectric material layer via over said metal line; patterning said spin-on-polymer layer to form a spin-on-polymer layer via opening continuous and contiguous with said CVD dielectric material layer via and exposing a portion of said metal line; and patterning said SiON layer and said CVD dielectric material layer adjacent said CVD dielectric material layer via to form a CVD dielectric material layer trench; said spin-on-polymer layer via opening and said CVD dielectric material layer trench forming a dual damascene opening.
Claim 28
Dependent Claim
53 words
The method of claim 24 , wherein said SOP layer is formed using a spin coater with a baking step at from about 50 to 280° C. for from about 10 to 90 seconds followed by a curing step at from about 300 to 450° C. for from about 30 to 90 minutes.
Claim 29
Dependent Claim
32 words
The method of claim 24 , wherein said CVD dielectric layer includes from about 5 to 50% by FTIR; from about 10 to 30% oxygen; and from about 10 to 30% hydrogen.
Claim 30
Dependent Claim
32 words
The method of claim 24 , wherein said spin-on-polymer layer is from about 1000 to 9000 Å thick, and said CVD dielectric material layer is from about 1000 to 9000 Å thick.
Claim 31
Dependent Claim
32 words
The method of claim 24 , wherein said spin-on-polymer layer is from about 3000 to 6000 Å thick, and said CVD dielectric material layer is from about 3000 to 6000 Å thick.
Claim 32
Dependent Claim
28 words
The method of claim 24 , wherein said spin-on-polymer layer is comprised of a material selected from the group comprising SiLK, FLARE, and CH 3 —SiO 2 .
Claim 33
Dependent Claim
28 words
The method of claim 24 , wherein said spin-on-polymer layer is comprised of the elements C, H, O, and Si with at least an arylate series functional group.
Claim 34
Dependent Claim
33 words
The method of claim 24 , wherein said CVD dielectric material layer is comprised of a material selected from the group comprising BD, silicon oxide, Coral™, povA, Greendot™, and carbon doped silicon oxide.
Claim 35
Dependent Claim
17 words
The method of claim 24 , wherein said CVD dielectric material layer is comprised of silicon oxide.
Claim 36
Dependent Claim
145 words
The method of claim 24 , wherein said SOP layer has the following characteristics: 1) RI is from about 1.35 to 1.43; 2) carbon content by FTIR is from about 30 to 65%; 3) oxygen content is from about 10 to 30%; 4) hydrogen content is from about 30 to 65%; 5) silicon content is from about 1 to 10%; 6) hardness is from about 0.5 to 3 Gpa; 7) density is from about 1.5 to 1.8 g/cm 3 ; 8) dielectric constant is from about 2.0 to 2.9; 9) stress is from about compressive 10E −8 to tensile 10E −8 ; 10) breakdown voltage is from about 2 to 9 MV/cm at 10 3 A/cm 2 ; 11) leakage current at 0.5 MV/cm is from about <10 −10 to 10 −12 A/cm 2 ; and 12) extinction coefficient is from about 0 to 1.
Claim 37
Dependent Claim
135 words
The method of claim 24 , wherein said CVD dielectric layer has the following characteristics: 1) RI is from about 1.30 to 1.67; 2) carbon content by FTIR is from about 5 to 50%; 3) oxygen content is from about 10 to 30%; 4) hydrogen content is from about 10 to 30%; 5) modulus is from about 40 to 70 Gpa; 6) hardness is from about 0.5 to 7 Gpa; 7) density is from about 1.5 to 1.8 g/cm 3 ; 8) dielectric constant is from about 2.2 to 3.3; 9) film stress is from about 30 to 100 Mpa tensile; 10) breakdown voltage is from about 2 to 9 MV/cm at 10 −3 A/cm 2 ; and 11) leakage current at 0.5 MV/cm is from about <10 −10 to 10 −2 A/cm 2 .
Claim 38
Dependent Claim
22 words
The method of claim 1 , wherein said CVD dielectric material layer has a dielectric constant of from about 2.2 to 3.3.
Claim 39
Dependent Claim
22 words
The method of claim 13 , wherein said CVD dielectric material layer has a dielectric constant of from about 2.2 to 3.3.
Claim 40
Dependent Claim
22 words
The method of claim 24 , wherein said CVD dielectric material layer has a dielectric constant of from about 2.2 to 3.3.
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