US6013581A
Expired / Lapsed
US
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Method for preventing poisoned vias and trenches
Assignee: United Microelectronics Corp
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Filing: 1998-10-05
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Granted: 2000-01-11
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Expires: 2018-10-05
Abstract
Abstract A method for preventing the occurrence of poisoned trenches and vias in a dual damascene process that includes performing a densification process, such as an plasma treatment, on the surface of the exposed dielectric layer around the openings before the openings are filled with conductive material. The densified surface of the dielectric layer is able to efficiently prevent the occurrence of poisoned trenches and vias caused by the outgassing phenomena.
Inventors
- 👤 Kun-Lin Wu
- 👤 Horng-Bor Lu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 12:29
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/093; H10W20/096; H05; H05K; H05K3/00; H05K3/46; H05K3/4644; H05K3/465; H10W20/074; H10W20/076; H10W20/081; H10W20/084; H10W20/088; H05K2203/00; H05K2203/03; H05K2203/0384; H05K2203/09; H05K2203/095; H05K3/0011; H05K3/0017; H05K3/002; H05K3/38; H05K3/388
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
95 words
A method for preventing poisoned trenches and vias, the method comprising; providing a substrate, wherein the substrate further comprises a conducting layer; forming a dielectric layer on the substrate; forming a trench and a via hole on the dielectric layer, wherein the trench and the via hole form a opening, and wherein the via hole exposes the conducting layer underneath; performing a plasma treatment on a exposed surface of the dielectric layer within the opening, wherein the plasma carries an energy; and filling the opening with a conductive material to form a dual damascene structure.
Claim 2
Independent Claim
95 words
A method for preventing poisoned trenches and vias, the method comprising; providing a substrate, wherein the substrate further comprises a conducting layer; forming a dielectric layer on the substrate; forming a trench and a via hole on the dielectric layer, wherein the trench and the via hole form a opening, and wherein the via hole exposes the conducting layer underneath; performing a plasma treatment on a exposed surface of the dielectric layer within the opening, wherein the plasma carries an energy; and filling the opening with a conductive material to form a dual damascene structure.
Claim 3
Dependent Claim
18 words
The method of claim 1, wherein the dielectric layer includes silicon oxide, fluorine-doped silicon oxide, or phosphosilicate glass.
Claim 4
Dependent Claim
12 words
The method of claim 1, wherein the dielectric layer includes low-permittivity materials.
Claim 5
Dependent Claim
13 words
The method of claim 1, wherein the dielectric layer includes spin on polymer.
Claim 6
Dependent Claim
18 words
The method of claim 4, wherein the dielectric layer includes aromatic-ring polymer, gel, methylsiloxane compounds, or hydrogen silsesquioxane.
Claim 7
Dependent Claim
15 words
The method of claim 1, wherein the plasma includes hydrogen, nitrogen, nitrogen dioxide, or ammonia.
Claim 8
Dependent Claim
13 words
The method of claim 1, wherein the energy is about 100 to 1000W.
Claim 9
Dependent Claim
17 words
The method of claim 1, wherein the conductive material comprises; a barrier/glue layer; and a metal layer.
Claim 10
Dependent Claim
24 words
The method of claim 8, wherein the barrier/glue layer includes titanium/titanium nitride, tantalum, tantalum nitride, tungsten nitride, titanium nitride, boron nitride, or tantalum-silicon-nitride (TaSiN).
Claim 11
Dependent Claim
14 words
The method of claim 8, wherein the metal layer includes aluminum, tungsten, or copper.
Claim 12
Independent Claim
231 words
A method for preventing poisoned trenches and vias, the method comprising; providing a substrate, wherein the substrate further comprises a conducting layer; forming a first etching stop, a first dielectric layer, a second etching stop, and a second dielectric layer on the substrate in sequence; patterning the second dielectric layer to form a opening by using the second etching stop as etching end point, wherein the opening located at a position correspondingly to the conducting layer underneath; removing a portion of the second etching stop exposed within the opening for transferring pattern onto the second etching stop; removing a portion of the second dielectric layer and a portion of the first dielectric layer by using the first etching stop as etching end point and using the second etching stop as a mask, for transferring the opening to the first dielectric layer to expose the first etching stop, and widening the opening to form a trench on the second dielectric layer, wherein the opening and the trench form a dual damascene opening; removing a portion of the first etching stop exposed within the opening to expose the conducting layer; performing a plasma treatment on a exposed surface of the first dielectric layer and second dielectric layer exposed within the opening, wherein the plasma carries an energy; and filling the dual damascene opening with a conductive material to form a dual damascene structure.
Claim 13
Independent Claim
231 words
A method for preventing poisoned trenches and vias, the method comprising; providing a substrate, wherein the substrate further comprises a conducting layer; forming a first etching stop, a first dielectric layer, a second etching stop, and a second dielectric layer on the substrate in sequence; patterning the second dielectric layer to form a opening by using the second etching stop as etching end point, wherein the opening located at a position correspondingly to the conducting layer underneath; removing a portion of the second etching stop exposed within the opening for transferring pattern onto the second etching stop; removing a portion of the second dielectric layer and a portion of the first dielectric layer by using the first etching stop as etching end point and using the second etching stop as a mask, for transferring the opening to the first dielectric layer to expose the first etching stop, and widening the opening to form a trench on the second dielectric layer, wherein the opening and the trench form a dual damascene opening; removing a portion of the first etching stop exposed within the opening to expose the conducting layer; performing a plasma treatment on a exposed surface of the first dielectric layer and second dielectric layer exposed within the opening, wherein the plasma carries an energy; and filling the dual damascene opening with a conductive material to form a dual damascene structure.
Claim 14
Dependent Claim
13 words
The method of claim 11, wherein the first etching stop includes silicon nitride.
Claim 15
Dependent Claim
12 words
The method of claim 11, wherein the second etching stop includes silicon-oxy-nitride.
Claim 16
Dependent Claim
24 words
The method of claim 11, wherein the first dielectric layer and the second dielectric layer include silicon oxide, fluorine-doped silicon oxide, or phosphosilicate glass.
Claim 17
Dependent Claim
18 words
The method of claim 11, wherein the first dielectric layer and the second dielectric layer include low-permittivity materials.
Claim 18
Dependent Claim
19 words
The method of claim 11, wherein the first dielectric layer and the second dielectric layer include spin on polymer.
Claim 19
Dependent Claim
24 words
The method of claim 16, wherein the first dielectric layer and the second dielectric layer include aromatic-ring polymer, gel, methylsiloxane compounds, or hydrogen silsesquioxane.
Claim 20
Dependent Claim
15 words
The method of claim 11, wherein the plasma includes hydrogen, nitrogen, nitrogen dioxide, or ammonia.
Claim 21
Dependent Claim
13 words
The method of claim 11, wherein the energy is about 100 to 1000W.
Claim 22
Dependent Claim
17 words
The method of claim 11, wherein the conductive material comprises; a barrier/glue layer; and a metal layer.
Claim 23
Dependent Claim
24 words
The method of claim 20, wherein the barrier/glue layer includes titanium/titanium nitride, tantalum, tantalum nitride, tungsten nitride, titanium nitride, boron nitride, or tantalum-silicon-nitride (TaSiN).
Claim 24
Dependent Claim
15 words
The method of claim 20, wherein the metal layer includes aluminum, tungsten, gold or copper.
Claim 25
Dependent Claim
19 words
The method of claim 11, wherein the step of filling the dual damascene structure further comprises a planarization process.
References Cited (Backward Citations)
US5926732A
Cited
US5429710A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-01-10 | 2003-07-12 | 2004-01-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-01-10 | 2007-07-12 | 2008-01-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-01-10 | 2011-07-12 | 2012-01-11 | $7700.00 | Window Closed / Lapsed |