US6350682B1
Expired / Lapsed
US
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Method of fabricating dual damascene structure using a hard mask
Assignee: United Microelectronics Corp
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Filing: 1998-05-06
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Granted: 2002-02-26
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Expires: 2018-05-06
Abstract
Abstract A method of fabricating dual damascene structure. A substrate having devices and a defined conductive layer is provided. A dielectric layer and a hard mask material layer are formed respectively over the substrate. An opening is defined within the hard mask material layer. Because of the different selectivity of the hard mask material layer and the dielectric layer, a trench is formed within the dielectric layer by defining the hard material mask layer and a portion of dielectric layer until the conductive layer is exposed. The cross shape of the trench has a wider opening and a narrower bottom. A metal layer is then formed and the trench is filled up with the metal layer. The process of dual damascene structure is accomplished..
Inventors
- 👤 Kuan-Yang Liao
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 19:27
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/081; H10W20/084; H10W20/088
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
149 words
A method of fabricating dual damascene structure, wherein a substrate having devices and a defined conductive layer are provided, comprising: forming a dielectric layer and a hard mask material layer on the substrate; forming an opening within the hard mask material layer to expose the dielectric layer, wherein the opening is directly over the conductive layer; after forming the opening, defining the hard mask material layer and the dielectric layer, to form a trench with a wider upper portion and a narrower bottom portion under the hard mask material layer with the opening, and the bottom portion of the trench exposing the defined conductive layer, wherein a selective etching ratio is used to etch the dielectric layer faster than the hard mask material layer, and a portion of the hard mask material layer with respect to the trench is removed; and forming a metal layer to fill the trench.
Claim 2
Independent Claim
149 words
A method of fabricating dual damascene structure, wherein a substrate having devices and a defined conductive layer are provided, comprising: forming a dielectric layer and a hard mask material layer on the substrate; forming an opening within the hard mask material layer to expose the dielectric layer, wherein the opening is directly over the conductive layer; after forming the opening, defining the hard mask material layer and the dielectric layer, to form a trench with a wider upper portion and a narrower bottom portion under the hard mask material layer with the opening, and the bottom portion of the trench exposing the defined conductive layer, wherein a selective etching ratio is used to etch the dielectric layer faster than the hard mask material layer, and a portion of the hard mask material layer with respect to the trench is removed; and forming a metal layer to fill the trench.
Claim 3
Dependent Claim
26 words
The method according to claim 1 , wherein the thickness of the hard mask material layer is in a range of about 100 to 2000 Å.
Claim 4
Dependent Claim
15 words
The method according to claim 1 , wherein the hard mask material layer includes titanium.
Claim 5
Dependent Claim
14 words
The method according to claim 1 , wherein the hard mask layer includes polysilicon.
Claim 6
Dependent Claim
15 words
The method according to claim 1 , wherein the hard mask layer includes metal film.
Claim 7
Dependent Claim
17 words
The method according to claim 1 , wherein hard mask material layer includes a metal nitride layer.
Claim 8
Dependent Claim
15 words
The method according to claim 6 , wherein the metal nitride layer includes titanium nitride.
Claim 9
Dependent Claim
23 words
The method according to claim 1 , wherein the material characteristic of the hard mask material layer is different from the dielectric layer.
Claim 10
Dependent Claim
57 words
The method according to claim 1 , wherein forming a metal layer to fill up the trench further comprises forming a metal layer on the hard mask material layer, the metal layer filling the opening; and removing the metal layer and the hard mask material layer from the surface of the dielectric layer by chemical mechanical polishing.
Claim 11
Independent Claim
193 words
A method of fabricating dual damascene structure, wherein a substrate having devices and a defined conductive layer are provided, comprising: forming a first dielectric layer on the substrate; forming a second dielectric layer on the first dielectric layer; forming a hard mask material layer on the second dielectric layer; forming an opening within the hard mask material layer to expose the second dielectric layer, the opening being directly over the defined conductive layer; defining the hard mask material layer, the second dielectric layer, and the first dielectric layer using a photoresist layer as a mask to form a trench with a wider upper portion and a narrower bottom portion under the hard mask material layer with the opening, wherein the bottom portion of the trench in the second dielectric layer and the first dielectric layer exposes the defined conductive layer, wherein a selective etching ratio is used to etch the first and the second dielectric layers faster than the hard mask material layer, and a portion of the hard mask material layer with respect to the trench is removed; removing the photoresist layer; and forming a metal layer to fill up the trench.
Claim 12
Independent Claim
193 words
A method of fabricating dual damascene structure, wherein a substrate having devices and a defined conductive layer are provided, comprising: forming a first dielectric layer on the substrate; forming a second dielectric layer on the first dielectric layer; forming a hard mask material layer on the second dielectric layer; forming an opening within the hard mask material layer to expose the second dielectric layer, the opening being directly over the defined conductive layer; defining the hard mask material layer, the second dielectric layer, and the first dielectric layer using a photoresist layer as a mask to form a trench with a wider upper portion and a narrower bottom portion under the hard mask material layer with the opening, wherein the bottom portion of the trench in the second dielectric layer and the first dielectric layer exposes the defined conductive layer, wherein a selective etching ratio is used to etch the first and the second dielectric layers faster than the hard mask material layer, and a portion of the hard mask material layer with respect to the trench is removed; removing the photoresist layer; and forming a metal layer to fill up the trench.
Claim 13
Dependent Claim
14 words
The method according to claim 10 , wherein the first dielectric layer includes oxide.
Claim 14
Dependent Claim
17 words
The method according to claim 10 , wherein the second dielectric layer includes low k dielectric material.
Claim 15
Dependent Claim
26 words
The method according to claim 10 , wherein the thickness of the hard mask material layer is in a range of about 100 to 2000 Å.
Claim 16
Dependent Claim
15 words
The method according to claim 10 , wherein the hard mask material layer includes titanium.
Claim 17
Dependent Claim
14 words
The method according to claim 12 , wherein the hard mask layer includes polysilicon.
Claim 18
Dependent Claim
15 words
The method according to claim 12 , wherein the hard mask layer includes metal film.
Claim 19
Dependent Claim
18 words
The method according to claim 12 , wherein the hard mask material layer includes a metal nitride layer.
Claim 20
Dependent Claim
15 words
The method according to claim 17 , wherein the metal nitride layer includes titanium nitride.
Claim 21
Dependent Claim
23 words
The method according to claim 12 , wherein the material characteristic of the hard mask material layer is different from the dielectric layers.
Claim 22
Dependent Claim
59 words
The method according to claim 10 , wherein forming a metal layer to fill up the trench further comprises: forming a metal layer on the hard mask material layer, the metal layer filling up the opening; and removing the metal layer and the hard mask material layer from the surface of the second dielectric layer by chemical mechanical polishing.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2005-02-25 | 2005-08-27 | 2006-02-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-02-25 | 2009-08-27 | 2010-02-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-02-25 | 2013-08-27 | 2014-02-26 | $7700.00 | Window Closed / Lapsed |