Semiconductor structure having multiple levels of self-aligned interconnection metallization, and methods for its preparation

Claim 2

An improved method for preparing a semiconductor structure which includes at least one stud-up and at least one interconnection line connected to the stud-up, wherein the stud-up and the interconnection line are self-aligned, and are formed from a single layer of metal; said method comprising the following steps: a) providing an insulator region on a semiconductor substrate; b) patterning and etching the insulator region with a mask to define at least one opening having a desired depth; c) depositing metal to overfill the opening, thereby forming a metallized surface over the insulator region and forming the interconnection line; d) planarizing the metallized surface over the insulator region back to the mask deposited in step b); and e) patterning and then forming a stud-up of desired dimensions within the metal-filled opening, the lower end of said stud-up being connected to the interconnection line, and the upper end of said stud-up terminating at or near the upper surface of the insulator region.

Claim 3

The method of claim 1, wherein the metal is deposited in step (c) by either CVD or low-pressure CVD.

Claim 4

The method of claim 1, wherein the stud-up is patterned and formed by the use of a mask applied over a portion of the surface of the semiconductor, said surface being at least partially covered with metal during the deposition of step (c).

Claim 5

The method of claim 3, wherein reactive ion etching is used to remove unwanted portions of metal during formation of the stud-up.

Claim 6

The method of claim 1, wherein the insulator region is formed of a material selected from the group consisting of silicon dioxide, phosphosilicate glass, a composite of silicon dioxide and silicon nitride, and polyimide.

Claim 7

The method of claim 1, wherein the interconnection line comprises a material selected from the group consisting of aluminum, tungsten, copper, aluminum-silicon, and alloys comprising any of the foregoing.

Claim 8

The method of claim 1, wherein formation of the stud-up in step (e) is carried out by removing portions of the metal deposited in step (c).

Claim 9

The method of claim 7, wherein the height of the stud-up is determined by the use of an endpoint detection trench, open at the upper surface of the insulator region, and having a depth equal to the desired height of the stud-up, said detection trench being filled with metal during step (c), wherein detection of the removal of all of the metal from the detection trench signals the endpoint for the metal removal step being carried out to form the stud-up.

Claim 10

The method of claim 8, wherein the endpoint detection trench is formed by etching during etching step (b).

Claim 11

An improved method for preparing a semiconductor structure which includes at least one stud-up, at least one stud-down, and at least one interconnection line which connects a stud-up to a stud-down, wherein the stud-up, stud-down, and interconnection line are self-aligned and formed from a single layer of metal; said method comprising the following steps: a) providing an insulator region on a semiconductor substrate, said region containing a general conductor level therein; b) patterning and etching the insulator region with a first mask, to define at least one contact via having a desired depth; c) patterning and etching the insulator region and the exposed surface of the first mask with a second mask, to define at least one interconnection line via which includes the cross-sectional width of the contact via; d) patterning and etching the first mask with the second mask to extend the contact via to a desired depth; e) etching the surface of the insulator region through the first and second masks, to extend the contact via to the general conductor level, while at the same time increasing the depth of the interconnection line via to a desired level above the general conductor level; followed by removal of the second mask; f) depositing metal to simultaneously fill the contact via and the interconnection line via; thereby forming the stud-down and the interconnection line, respectively; and g) patterning and then forming a stud-up of desired dimensions within the metal-filled contact area, the lower end of said stud-up being connected to the interconnection line, and the upper end of said stud-up terminating at or near the upper surface of the insulator region.

Claim 12

An improved method for preparing a semiconductor structure which includes at least one stud-up, at least one stud-down, and at least one interconnection line which connects a stud-up to a stud-down, wherein the stud-up, stud-down, and interconnection line are self-aligned and formed from a single layer of metal; said method comprising the following steps: a) providing an insulator region on a semiconductor substrate, said region containing a general conductor level therein; b) patterning and etching the insulator region with a first mask, to define at least one contact via having a desired depth; c) patterning and etching the insulator region and the exposed surface of the first mask with a second mask, to define at least one interconnection line via which includes the cross-sectional width of the contact via; d) patterning and etching the first mask with the second mask to extend the contact via to a desired depth; e) etching the surface of the insulator region through the first and second masks, to extend the contact via to the general conductor level, while at the same time increasing the depth of the interconnection line via to a desired level above the general conductor level; followed by removal of the second mask; f) depositing metal to simultaneously fill the contact via and the interconnection line via; thereby forming the stud-down and the interconnection line, respectively; and g) patterning and then forming a stud-up of desired dimensions within the metal-filled contact area, the lower end of said stud-up being connected to the interconnection line, and the upper end of said stud-up terminating at or near the upper surface of the insulator region.

Claim 13

The method of claim 10, wherein the first mask is an etch stop layer.

Claim 14

The method of claim 10, wherein the desired level in step (e) is represented by a second etch stop layer.

Claim 15

The method of claim 10, wherein the surface of the insulator region is planarized after step (f).

Claim 16

The method of claim 10, wherein the stud-up is patterned and formed by the use of a third mask applied over a portion of the insulator region.

Claim 17

The method of claim 10, wherein reactive ion etching is used to remove unwanted portions of metal during formation of the stud-up.