US5539255A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor structure having self-aligned interconnection metallization formed from a single layer of metal
Assignee: International Business Machines Corp
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Filing: 1995-09-07
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Granted: 1996-07-23
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Expires: 2015-09-07
Abstract
Abstract An improved semiconductor structure is disclosed, including at least one stud-up and an interconnection line connected thereto, wherein the stud-up and interconnection line are formed from a single layer of metal. The structure is prepared by a method in which an insulator region is first provided on a semiconductor substrate, and is then patterned and etched to define at least one opening having a pre-selected depth. Metal is deposited to fill the opening and form the interconnection line, followed by the patterning and formation of a stud-up of desired dimensions within the metal-filled opening. The lower end of the stud-up becomes connected to the interconnection line, and the upper end of the stud-up terminates at or near the upper surface of the insulator region. Other embodiments also include an interconnected stud-down. An endpoint detection technique can be used to precisely control the height of the stud-up and the width of the interconnection line.
Inventors
- 👤 John E. Cronin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 15:37
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/069; H10W20/056; H10W20/063; H10W20/0633; H10W20/0693; H10W20/40; H10W20/41; H10W20/42
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
91 words
A semiconductor structure, comprising: (i) an insulator region disposed over a substrate, said insulator region having an endpoint detection trench open at the upper surface of the insulator region; (ii) at least one stud-up having a lower end connected to an interconnection line, and having an upper end which terminates at or near the upper surface of the insulator region; wherein the stud-up and the interconnection line are formed from a single layer of metal; and wherein the endpoint detection trench has a depth equal to the height of the stud-up.
Claim 2
Dependent Claim
91 words
A semiconductor structure, comprising: (i) an insulator region disposed over a substrate, said insulator region having an endpoint detection trench open at the upper surface of the insulator region; (ii) at least one stud-up having a lower end connected to an interconnection line, and having an upper end which terminates at or near the upper surface of the insulator region; wherein the stud-up and the interconnection line are formed from a single layer of metal; and wherein the endpoint detection trench has a depth equal to the height of the stud-up.
Claim 3
Dependent Claim
138 words
A semiconductor structure, comprising: (ii) an insulator region disposed over a substrate, said insulator region having an endpoint detection trench open at the upper surface of the insulator region; (ii) a general conductor level within the interior of the insulator region; (iii) at least one stud-down, having a lower end connected to the general conductor level, and having an upper end connected to an interconnection line situated within the interior of the insulator region; (iv) at least one stud-up having a lower end connected to the interconnection line, and having an upper end which terminates at or near the upper surface of the insulator region; wherein the stud-up, stud-down, and interconnection line are self-aligned and formed from a single layer of metal and wherein said endpoint detection trench has a depth equal to the height of said stud-up.
Claim 4
Dependent Claim
138 words
A semiconductor structure, comprising: (ii) an insulator region disposed over a substrate, said insulator region having an endpoint detection trench open at the upper surface of the insulator region; (ii) a general conductor level within the interior of the insulator region; (iii) at least one stud-down, having a lower end connected to the general conductor level, and having an upper end connected to an interconnection line situated within the interior of the insulator region; (iv) at least one stud-up having a lower end connected to the interconnection line, and having an upper end which terminates at or near the upper surface of the insulator region; wherein the stud-up, stud-down, and interconnection line are self-aligned and formed from a single layer of metal and wherein said endpoint detection trench has a depth equal to the height of said stud-up.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-07-23 | 2000-01-22 | 2000-07-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-07-23 | 2004-01-22 | 2004-07-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-07-23 | 2008-01-22 | 2008-07-23 | $7700.00 | Window Closed / Lapsed |