US5189506A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Triple self-aligned metallurgy for semiconductor devices
Assignee: International Business Machines Corp
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Filing: 1992-06-03
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Granted: 1993-02-23
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Expires: 2012-06-03
Abstract
Abstract A process is described which eliminates the need to account for mask alignment tolerances in forming vias for metallurgy by the use of a common vertical edge or common plane defined by a first mask representing a first level of interconnect. Subsequent masks for defining interconnecting vias and a second level of interconnect utilize at least one edge of the first mask pattern as a common element to define subsequent metal levels. The combination of an etch stop layer and an oversized second level mask enable the mask overlay to be eliminated.
Inventors
- 👤 John E. Cronin
- 👤 Carter W. Kaanta
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 21:07
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/063; H10W20/056; H10W20/058; H10W20/069; H10W20/0693
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
70 words
A metallurgical structure for an integrated circuit having a conductive member formed in a recess in a layer of insulating material by sequential first, second and third mask-definable layers of conductive material characterized in that each of said layers of conductive material has a substantially vertical surface portion adjacent to said insulating material and terminating in at least one common plane defined in said insulating material by said first mask.
Claim 2
Dependent Claim
70 words
A metallurgical structure for an integrated circuit having a conductive member formed in a recess in a layer of insulating material by sequential first, second and third mask-definable layers of conductive material characterized in that each of said layers of conductive material has a substantially vertical surface portion adjacent to said insulating material and terminating in at least one common plane defined in said insulating material by said first mask.
Claim 3
Dependent Claim
36 words
The structure of claim 1 wherein the first mask-definable layer represents a first metallurgical interconnection layer, the second mask-definable layer represents a stud interconnection layer and the third mask-definable layer represents a second metallurgical interconnection layer.
Claim 4
Dependent Claim
20 words
The structure of claim 1 wherein said common plane is formed by a dielectric layer defined by a first mask.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-02-23 | 1996-08-24 | 1997-02-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-02-23 | 2000-08-24 | 2001-02-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-02-23 | 2004-08-24 | 2005-02-23 | $7700.00 | Window Closed / Lapsed |