US4892843A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing a semiconductor device
Assignee: US Philips Corp
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Filing: 1988-12-28
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Granted: 1990-01-09
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Expires: 2008-12-28
Abstract
Abstract The invention relates to a method of manufacturing a semiconductor device, in which a tungsten layer is provided on a surface of a substrate by reduction of tungsten hexafluoride with hydrogen. According to the invention, the contact resistance of the tungsten with the substrate is considerably reduced by first providing a tungsten layer on the substrate by reduction of tungsten hexafluoride with silane.
Inventors
- 👤 Johannes E. J. Schmitz
- 👤 Antonius J. M. Van Dijk
- 👤 Russell C. Ellwanger
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 02:14
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40; H10P14/412; H10P14/42; H10P14/43; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W20/4437; H10W20/4441
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
83 words
A method of manufacturing a semiconductor device comprising the steps of first forming a first tungsten layer on a substrate by reducing tungsten hexafluoride with silane in the gaseous phase and in the absence of a separate supply of hydrogen gas, said silane having a mole fraction smaller in the supply to the gaseous phase than a mole fraction of said tungsten hexafluoride, and thereafter forming a further tungsten layer over said first tungsten layer by reducing tungsten hexafluoride with only hydrogen gas.
Claim 2
Independent Claim
83 words
A method of manufacturing a semiconductor device comprising the steps of first forming a first tungsten layer on a substrate by reducing tungsten hexafluoride with silane in the gaseous phase and in the absence of a separate supply of hydrogen gas, said silane having a mole fraction smaller in the supply to the gaseous phase than a mole fraction of said tungsten hexafluoride, and thereafter forming a further tungsten layer over said first tungsten layer by reducing tungsten hexafluoride with only hydrogen gas.
Claim 3
Dependent Claim
34 words
A method according to claim 1, wherein said first tungsten layer is formed to a first thickness of 0.3 μm, and said further tungsten layer is formed to a second thickness of 0.6 μm.
Claim 4
Dependent Claim
25 words
A method according to claim 2, wherein said first tungsten layer and said further tungsten layer are both formed at a temperature below 450° C.
Claim 5
Dependent Claim
62 words
A method according to claim 3, wherein a silicon oxide layer is formed on said substrate, a plurality of openings are formed in said silicon oxide layer, said openings having a diameter smaller than 1.2 μm, said silicon oxide layer having a thickness larger than 0.3 μm, and said first tungsten layer and said further tungsten layer are formed in said openings.
Claim 6
Dependent Claim
20 words
A method according to claim 4, wherein said diameter is about 1 μm, and said thickness is about 0.8 μm.
Claim 7
Dependent Claim
25 words
A method according to claim 3, wherein said first tungsten layer and said further tungsten layer are formed on one of silicon, aluminum, or titanium-tungsten.
Claim 8
Dependent Claim
25 words
A method according to claim 1, wherein said first tungsten layer and said further tungsten layer are both formed at a temperature below 450° C.
Claim 9
Dependent Claim
62 words
A method according to claim 2, wherein a silicon oxide layer is formed on said substrate, a plurality of openings are formed in said silicon oxide layer, said openings having a diameter smaller than 1.2 μm, said silicon oxide layer having a thickness larger than 0.3 μm, and said first tungsten layer and said further tungsten layer are formed in said openings.
Claim 10
Dependent Claim
20 words
A method according to claim 8, wherein said diameter is about 1 μm, and said thickness is about 0.8 μm.
Claim 11
Dependent Claim
25 words
A method according to claim 2, wherein said first tungsten layer and said further tungsten layer are formed on one of silicon, aluminum, or titanium-tungsten.
Claim 12
Dependent Claim
62 words
A method according to claim 1, wherein a silicon oxide layer is formed on said substrate, a plurality of openings are formed in said silicon oxide layer, said openings having a diameter smaller than 1.2 μm, said silicon oxide layer having a thickness larger than 0.3 μm, and said first tungsten layer and said further tungsten layer are formed in said openings.
Claim 13
Dependent Claim
20 words
A method according to claim 11, wherein said diameter is about 1 μm, and said thickness is about 0.8 μm.
Claim 14
Dependent Claim
25 words
A method according to claim 11, wherein said first tungsten layer and said further tungsten layer are formed on one of silicon, aluminum, or titanium-tungten.
Claim 15
Dependent Claim
25 words
A method according to claim 1, wherein said first tungsten layer and said further tungsten layer are formed on one of silicon, aluminum, or titanium-tungsten.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-01-08 | 1993-07-10 | 1994-01-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-01-08 | 1997-07-10 | 1998-01-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-01-08 | 2001-07-10 | 2002-01-09 | $7700.00 | Window Closed / Lapsed |