Semiconductor package with stacked substrates and multiple semiconductor dice

Claim 2

A stacked semiconductor assembly, comprising: a base substrate having a first surface including a plurality of bond pads; at least one first semiconductor die having an active surface having at least one bond pad thereon and having a second surface; a first stacked nonconductive substrate having a first surface and a second surface, said at least one first semiconductor die having said second surface thereof disposed on at least one portion of said first surface of said first stacked nonconductive substrate; at least one second semiconductor die having a first surface having a plurality of bond pads located thereon, said first surface of said at least one second semiconductor die attached to at least one portion of said second surface of said first stacked nonconductive substrate; at least one first connector connecting said at least one bond pad of said at least one first semiconductor die to at least one bond area of said plurality of bond pads of said base substrate; at least one second connector connecting said at least one bond pad of said at least one second semiconductor die to at least one bond area of said plurality of bond pads of said base substrate; a second stacked nonconductive substrate having a first surface and a second surface; at least one third semiconductor die having a first surface having a plurality of bond pads located thereon, said first surface of said at least one third semiconductor die attached to at least one portion of said first surface of said second stacked nonconductive substrate; and at least one third connector connecting at least one bond pad of said plurality of bond pads of said at least one third semiconductor die to said first surface of said first stacked nonconductive substrate.

Claim 3

The semiconductor assembly of claim 1 , wherein said at least one first semiconductor die is located on and electrically connected to said at least one portion of said first surface of said first stacked nonconductive substrate.

Claim 4

The semiconductor assembly of claim 1 , wherein said second surface of said first stacked nonconductive substrate includes a plurality of bond pads; and wherein said at least one second semiconductor die is located on and electrically connected to said portion of said second surface of said first stacked nonconductive substrate.

Claim 5

The semiconductor assembly of claim 1 , wherein said at least one first connector includes one of solder, conductive adhesives, Z-axis conductive material, flex-contacts, spring contacts, wire bonds, and TAB tape.

Claim 6

The semiconductor assembly of claim 1 , wherein said base substrate further comprises a second surface having a plurality of bond pads located thereon.

Claim 7

The semiconductor assembly of claim 5 , further comprising connections attached to said plurality of bond pads of said second surface of said base substrate for connection with external electrical circuitry.

Claim 8

The semiconductor assembly of claim 6 , further comprising a plurality of trace leads located on said base substrate connecting said plurality of bond pads of said first surface of said base substrate and said plurality of bond pads of said second surface of said base substrate.

Claim 9

The semiconductor assembly of claim 1 , further comprising: a base semiconductor die having a plurality of bond pads and disposed on said base substrate first surface; and at least one third connector connecting said at least one of said plurality of bond pads of said first surface of said base substrate and said at least one bond pad of said at least one first semiconductor die.

Claim 10

A semiconductor assembly comprising: a base substrate having a first surface including a plurality of bonds pads thereon, a second surface including a plurality of bond pads thereon, and a plurality of traces, at least one trace of said plurality of traces connecting at least one bond pad of said plurality of bond pads on said first surface of said base substrate to at least one bond pad of said plurality of bond pads on said second surface of said base substrate; a first stacked nonconductive substrate having a first surface including a plurality of bond pads thereon, a second surface including a plurality of bond pads thereon, a first plurality of traces, at least one trace of said first plurality of traces connecting at least one bond pad of said plurality of bond pads on said first surface of said first stacked nonconductive substrate to at least one bond pad of said plurality of bond pads on said second surface of said first stacked nonconductive substrate, and a second plurality of traces, at least one trace of said second plurality of traces connected to another bond pad of said plurality of bond pads on said first surface of said first stacked nonconductive substrate; a first semiconductor die disposed on said first surface of said first stacked nonconductive substrate, said first semiconductor die connected to said at least one trace of said second plurality of traces connected to said another bond pad of said plurality of bond pads on said first surface of said first stacked nonconductive substrate; a second stacked nonconductive substrate having a first surface including a plurality of bond pads thereon, a second surface including a plurality of bond pads thereon, a first plurality of traces, at least one trace of said first plurality of traces of said second stacked nonconductive substrate connecting at least one bond pad of said plurality of bond pads on said first surface of said second stacked nonconductive substrate to at least one bond pad of said plurality of bond pads on said second surface of said second stacked nonconductive substrate, and a second plurality of traces, at least one trace of said second plurality of traces of said second stacked nonconductive substrate connected to another bond pad of said plurality of bond pads on said first surface of said second stacked nonconductive substrate; a second semiconductor die disposed on said first surface of said second stacked nonconductive substrate, said second semiconductor die connected to said at least one trace of said second plurality of traces of said second stacked nonconductive substrate connected to said another bond pad of said plurality of bond pads on said first surface of said second stacked nonconductive substrate; a third semiconductor die disposed on said second surface of said second stacked nonconductive substrate; a first plurality of connections connecting said base substrate and said first stacked nonconductive substrate, at least one connection of said first plurality of connections connecting said at least one bond pad of said plurality of bond pads on said first surface of said base substrate to said at least one bond pad of said plurality of bond pads on said first surface of said first stacked nonconductive substrate; a second plurality of connections connecting said second stacked nonconductive substrate and said first stacked nonconductive substrate, at least one connection of said second plurality of connections connecting said at least one bond pad of said plurality of bond pads on said first surface of said second stacked nonconductive substrate to said at least one bond pad of said plurality of bond pads on said second surface of said first stacked nonconductive substrate; a third stacked nonconductive substrate having a first surface including a plurality of bond pads thereon, a second surface including a plurality of bond pads thereon, a first plurality of traces, at least one trace of said first plurality of traces of said third stacked nonconductive substrate connecting at least one bond pad of said plurality of bond pads on said first surface of said third stacked nonconductive substrate to at least one bond pad of said plurality of bond pads on said second surface of said third stacked nonconductive substrate, and a second plurality of traces, at least one trace of said second plurality of traces of said third stacked nonconductive substrate connected to another bond pad of said plurality of bond pads on said first surface of said third stacked nonconductive substrate; a fourth semiconductor die disposed on said second surface of said third stacked nonconductive substrate; a fifth semiconductor die disposed on said first surface of said third stacked nonconductive substrate, said fifth semiconductor die connected to said at least one trace of said second plurality of traces of said third stacked nonconductive substrate connected to said another bond pad of said plurality of bond pads on said first surface of said third stacked nonconductive substrate; and a third plurality of connections connecting said third stacked nonconductive substrate and said second stacked nonconductive substrate, at least one connection of said third plurality of connections connecting said at least one bond pad of said plurality of bond pads on said first surface of said third stacked nonconductive substrate to said at least one bond pad of the plurality of bond pads on said second surface of said second stacked nonconductive substrate.

Claim 11

A semiconductor assembly comprising: a base substrate having a first surface including a plurality of bonds pads thereon, a second surface including a plurality of bond pads thereon, and a plurality of traces, at least one trace of said plurality of traces connecting at least one bond pad of said plurality of bond pads on said first surface of said base substrate to at least one bond pad of said plurality of bond pads on said second surface of said base substrate; a first stacked nonconductive substrate having a first surface including a plurality of bond pads thereon, a second surface including a plurality of bond pads thereon, a first plurality of traces, at least one trace of said first plurality of traces connecting at least one bond pad of said plurality of bond pads on said first surface of said first stacked nonconductive substrate to at least one bond pad of said plurality of bond pads on said second surface of said first stacked nonconductive substrate, and a second plurality of traces, at least one trace of said second plurality of traces connected to another bond pad of said plurality of bond pads on said first surface of said first stacked nonconductive substrate; a first semiconductor die disposed on said first surface of said first stacked nonconductive substrate, said first semiconductor die connected to said at least one trace of said second plurality of traces connected to said another bond pad of said plurality of bond pads on said first surface of said first stacked nonconductive substrate; a second stacked nonconductive substrate having a first surface including a plurality of bond pads thereon, a second surface including a plurality of bond pads thereon, a first plurality of traces, at least one trace of said first plurality of traces of said second stacked nonconductive substrate connecting at least one bond pad of said plurality of bond pads on said first surface of said second stacked nonconductive substrate to at least one bond pad of said plurality of bond pads on said second surface of said second stacked nonconductive substrate, and a second plurality of traces, at least one trace of said second plurality of traces of said second stacked nonconductive substrate connected to another bond pad of said plurality of bond pads on said first surface of said second stacked nonconductive substrate; a second semiconductor die disposed on said first surface of said second stacked nonconductive substrate, said second semiconductor die connected to said at least one trace of said second plurality of traces of said second stacked nonconductive substrate connected to said another bond pad of said plurality of bond pads on said first surface of said second stacked nonconductive substrate; a third semiconductor die disposed on said second surface of said second stacked nonconductive substrate; a first plurality of connections connecting said base substrate and said first stacked nonconductive substrate, at least one connection of said first plurality of connections connecting said at least one bond pad of said plurality of bond pads on said first surface of said base substrate to said at least one bond pad of said plurality of bond pads on said first surface of said first stacked nonconductive substrate; a second plurality of connections connecting said second stacked nonconductive substrate and said first stacked nonconductive substrate, at least one connection of said second plurality of connections connecting said at least one bond pad of said plurality of bond pads on said first surface of said second stacked nonconductive substrate to said at least one bond pad of said plurality of bond pads on said second surface of said first stacked nonconductive substrate; a third stacked nonconductive substrate having a first surface including a plurality of bond pads thereon, a second surface including a plurality of bond pads thereon, a first plurality of traces, at least one trace of said first plurality of traces of said third stacked nonconductive substrate connecting at least one bond pad of said plurality of bond pads on said first surface of said third stacked nonconductive substrate to at least one bond pad of said plurality of bond pads on said second surface of said third stacked nonconductive substrate, and a second plurality of traces, at least one trace of said second plurality of traces of said third stacked nonconductive substrate connected to another bond pad of said plurality of bond pads on said first surface of said third stacked nonconductive substrate; a fourth semiconductor die disposed on said second surface of said third stacked nonconductive substrate; a fifth semiconductor die disposed on said first surface of said third stacked nonconductive substrate, said fifth semiconductor die connected to said at least one trace of said second plurality of traces of said third stacked nonconductive substrate connected to said another bond pad of said plurality of bond pads on said first surface of said third stacked nonconductive substrate; and a third plurality of connections connecting said third stacked nonconductive substrate and said second stacked nonconductive substrate, at least one connection of said third plurality of connections connecting said at least one bond pad of said plurality of bond pads on said first surface of said third stacked nonconductive substrate to said at least one bond pad of the plurality of bond pads on said second surface of said second stacked nonconductive substrate.

Claim 12

The semiconductor assembly of claim 9 , wherein said first plurality of connections connecting said base substrate and said first stacked nonconductive substrate supports said first stacked nonconductive substrate.

Claim 13

The semiconductor assembly of claim 9 , wherein said second plurality of connections connecting said first stacked nonconductive substrate and said second stacked nonconductive substrate supports said second stacked nonconductive substrate.

Claim 14

The semiconductor assembly of claim 9 , wherein said first plurality of connections includes solder, conductive adhesives, Z-axis conductive material, flex-contacts, spring contacts, wire bonds, and TAB tape.

Claim 15

The semiconductor assembly of claim 9 , wherein said second plurality of connections includes solder, conductive adhesives, Z-axis conductive material, flex-contacts, spring contacts, wire bonds, and TAB tape.

Claim 16

The semiconductor assembly of claim 9 , further comprising: a fourth plurality of connections, at least one connection of said fourth plurality of connections connecting said at least one bond pad of said plurality of bond pads on said second surface of said base substrate to external electrical circuitry.

Claim 17

The semiconductor assembly of claim 9 , wherein said first semiconductor die disposed on said first surface of said first stacked nonconductive substrate is connected to said at least one trace of said second plurality of traces connected to said another bond pad of said plurality of bond pads on said first surface of said first stacked nonconductive substrate through one of flip chip attachment, wirebonding, TAB tape, and a combination thereof.

Claim 18

The semiconductor assembly of claim 9 , wherein said second semiconductor die disposed on said first surface of said second stacked nonconductive substrate is connected to said at least one trace of said second plurality of traces of said second stacked nonconductive substrate connected to said another bond pad of said plurality of bond pads on said first surface of said second stacked nonconductive substrate through one of flip chip attachment, wirebonding, TAB tape, and a combination thereof.

Claim 19

The semiconductor assembly of claim 9 , wherein said third semiconductor die disposed on said second surface of said second stacked nonconductive substrate is connected to said at least one bond pad of said plurality of bond pads on said second surface of said second stacked nonconductive substrate.

Claim 20

The semiconductor assembly of claim 9 , wherein said third semiconductor die disposed on said second surface of said second stacked nonconductive substrate is connected to said at least one bond pad of said plurality of bond pads on said first surface of said second stacked nonconductive substrate.

Claim 21

The semiconductor assembly of claim 9 , wherein said second semiconductor die disposed on said first surface of said second stacked nonconductive substrate is connected to said at least one bond pad of said plurality of bond pads on said second surface of said second stacked nonconductive substrate and wherein said third semiconductor die disposed on said second surface of said second stacked nonconductive substrate is connected to said at least one bond pad of said plurality of bond pads on said second surface of said second stacked nonconductive substrate.

Claim 22

The semiconductor assembly of claim 9 , further comprising: a fourth stacked nonconductive substrate having a first surface including a plurality of bond pads thereon, a second surface including a plurality of bond pads thereon, a first plurality of traces, at least one trace of said first plurality of traces of said fourth stacked nonconductive substrate connecting at least one bond pad of said plurality of bond pads on said first surface of said fourth stacked nonconductive substrate to at least one bond pad of said plurality of bond pads on said second surface of said fourth stacked nonconductive substrate, and a second plurality of traces, at least one trace of said second plurality of traces of said fourth stacked nonconductive substrate connected to another bond pad of said plurality of bond pads on said first surface of said fourth stacked nonconductive substrate, said fourth stacked nonconductive substrate located above said second stacked nonconductive substrate, said fourth stacked nonconductive substrate having a size less than sizes of said base substrate, said first stacked nonconductive substrate, said second stacked nonconductive substrate, and said third stacked nonconductive substrate; a sixth semiconductor die disposed on said first surface of said fourth stacked nonconductive substrate, said sixth semiconductor die connected to said at least one trace of said second plurality of traces of said fourth stacked nonconductive substrate connected to said another bond pad of said plurality of bond pads on said first surface of said fourth stacked nonconductive substrate; and a fourth plurality of connections connecting said fourth stacked nonconductive substrate and said second stacked nonconductive substrate, at least one connection of said fourth plurality of connections connecting said at least one bond pad of said plurality of bond pads on said first surface of said fourth stacked nonconductive substrate to said at least one bond pad of said plurality of bond pads on said second surface of said second stacked nonconductive substrate.

Claim 23

A semiconductor assembly comprising: a base substrate having a first surface including a plurality of bonds pads thereon, a second surface including a plurality of bond pads thereon, and a plurality of traces, at least one trace of said plurality of traces connecting at least one bond pad of said plurality of bond pads on said first surface of said base substrate to at least one bond pad of said plurality of bond pads on said second surface of said base substrate; a first stacked nonconductive substrate having a first surface including a plurality of bond pads thereon, a second surface including a plurality of bond pads thereon, a first plurality of traces, at least one trace of said first plurality of traces connecting at least one bond pad of said plurality of bond pads on said first surface of said first stacked nonconductive substrate to at least one bond pad of said plurality of bond pads on said second surface of said first stacked nonconductive substrate, and a second plurality of traces, at least one trace of said second plurality of traces connected to another bond pad of said plurality of bond pads on said first surface of said first stacked nonconductive substrate; a plurality of first semiconductor dice disposed on said first surface of said first stacked nonconductive substrate, each die of said plurality of first semiconductor dice connected to said at least one trace of said second plurality of traces connected to said another bond pad of said plurality of bond pads on said first surface of said first stacked nonconductive substrate; a second stacked nonconductive substrate having a first surface including a plurality of bond pads thereon, a second surface including a plurality of bond pads thereon, a first plurality of traces, at least one trace of said first plurality of traces of said second stacked nonconductive substrate connecting at least one bond pad of said plurality of bond pads on said first surface of said second stacked nonconductive substrate to at least one bond pad of said plurality of bond pads on said second surface of said second stacked nonconductive substrate, and a second plurality of traces, at least one trace of said second plurality of traces of said second stacked nonconductive substrate connected to another bond pad of said plurality of bond pads on said first surface of said second stacked nonconductive substrate; a plurality of second semiconductor dice disposed on said first surface of said second stacked nonconductive substrate, each die of said plurality of second semiconductor dice connected to said at least one trace of said second plurality of traces of said second stacked nonconductive substrate connected to said another bond pad of said plurality of bond pads on said first surface of said second stacked nonconductive substrate; a plurality of third semiconductor dice disposed on said second surface of said second stacked nonconductive substrate; a first plurality of connections connecting said base substrate and said first stacked nonconductive substrate, at least one connection of said first plurality of connections connecting said at least one bond pad of said plurality of bond pads on said first surface of said base substrate to said at least one bond pad of the plurality of bond pads on the first surface of said first stacked nonconductive substrate; a second plurality of connections connecting said second stacked nonconductive substrate and said first stacked nonconductive substrate, at least one connection of said second plurality of connections connecting said at least one bond pad of said plurality of bond pads on said first surface of said second stacked nonconductive substrate to said at least one bond pad of the plurality of bond pads on the second surface of said first stacked nonconductive substrate; a third stacked nonconductive substrate having a first surface including a plurality of bond pads thereon, a second surface including a plurality of bond pads thereon, a first plurality of traces, at least one trace of said first plurality of traces of said third stacked nonconductive substrate connecting at least one bond pad of said plurality of bond pads on said first surface of said third stacked nonconductive substrate to at least one bond pad of said plurality of bond pads on said second surface of said third stacked nonconductive substrate, and a second plurality of traces, at least one trace of said second plurality of traces of said third stacked nonconductive substrate connected to another bond pad of said plurality of bond pads on said first surface of said third stacked nonconductive substrate; a plurality of fourth semiconductor dice disposed on said first surface of said third stacked nonconductive substrate, each die of said plurality of fourth semiconductor dice connected to said at least one trace of said second plurality of traces of said third stacked nonconductive substrate connected to said another bond pad of said plurality of bond pads on said first surface of said third stacked nonconductive substrate; a plurality of fifth semiconductor dice disposed on said second surface of said third stacked nonconductive substrate; and a third plurality of connections connecting said third stacked nonconductive substrate and said second stacked nonconductive substrate, at least one connection of said third plurality of connections connecting said at least one bond pad of said plurality of bond pads on said first surface of said third stacked nonconductive substrate to said at least one bond pad of the plurality of bond pads on the second surface of said second stacked nonconductive substrate.

Claim 24

A semiconductor assembly comprising: a base substrate having a first surface including a plurality of bonds pads thereon, a second surface including a plurality of bond pads thereon, and a plurality of traces, at least one trace of said plurality of traces connecting at least one bond pad of said plurality of bond pads on said first surface of said base substrate to at least one bond pad of said plurality of bond pads on said second surface of said base substrate; a first stacked nonconductive substrate having a first surface including a plurality of bond pads thereon, a second surface including a plurality of bond pads thereon, a first plurality of traces, at least one trace of said first plurality of traces connecting at least one bond pad of said plurality of bond pads on said first surface of said first stacked nonconductive substrate to at least one bond pad of said plurality of bond pads on said second surface of said first stacked nonconductive substrate, and a second plurality of traces, at least one trace of said second plurality of traces connected to another bond pad of said plurality of bond pads on said first surface of said first stacked nonconductive substrate; a plurality of first semiconductor dice disposed on said first surface of said first stacked nonconductive substrate, each die of said plurality of first semiconductor dice connected to said at least one trace of said second plurality of traces connected to said another bond pad of said plurality of bond pads on said first surface of said first stacked nonconductive substrate; a second stacked nonconductive substrate having a first surface including a plurality of bond pads thereon, a second surface including a plurality of bond pads thereon, a first plurality of traces, at least one trace of said first plurality of traces of said second stacked nonconductive substrate connecting at least one bond pad of said plurality of bond pads on said first surface of said second stacked nonconductive substrate to at least one bond pad of said plurality of bond pads on said second surface of said second stacked nonconductive substrate, and a second plurality of traces, at least one trace of said second plurality of traces of said second stacked nonconductive substrate connected to another bond pad of said plurality of bond pads on said first surface of said second stacked nonconductive substrate; a plurality of second semiconductor dice disposed on said first surface of said second stacked nonconductive substrate, each die of said plurality of second semiconductor dice connected to said at least one trace of said second plurality of traces of said second stacked nonconductive substrate connected to said another bond pad of said plurality of bond pads on said first surface of said second stacked nonconductive substrate; a plurality of third semiconductor dice disposed on said second surface of said second stacked nonconductive substrate; a first plurality of connections connecting said base substrate and said first stacked nonconductive substrate, at least one connection of said first plurality of connections connecting said at least one bond pad of said plurality of bond pads on said first surface of said base substrate to said at least one bond pad of the plurality of bond pads on the first surface of said first stacked nonconductive substrate; a second plurality of connections connecting said second stacked nonconductive substrate and said first stacked nonconductive substrate, at least one connection of said second plurality of connections connecting said at least one bond pad of said plurality of bond pads on said first surface of said second stacked nonconductive substrate to said at least one bond pad of the plurality of bond pads on the second surface of said first stacked nonconductive substrate; a third stacked nonconductive substrate having a first surface including a plurality of bond pads thereon, a second surface including a plurality of bond pads thereon, a first plurality of traces, at least one trace of said first plurality of traces of said third stacked nonconductive substrate connecting at least one bond pad of said plurality of bond pads on said first surface of said third stacked nonconductive substrate to at least one bond pad of said plurality of bond pads on said second surface of said third stacked nonconductive substrate, and a second plurality of traces, at least one trace of said second plurality of traces of said third stacked nonconductive substrate connected to another bond pad of said plurality of bond pads on said first surface of said third stacked nonconductive substrate; a plurality of fourth semiconductor dice disposed on said first surface of said third stacked nonconductive substrate, each die of said plurality of fourth semiconductor dice connected to said at least one trace of said second plurality of traces of said third stacked nonconductive substrate connected to said another bond pad of said plurality of bond pads on said first surface of said third stacked nonconductive substrate; a plurality of fifth semiconductor dice disposed on said second surface of said third stacked nonconductive substrate; and a third plurality of connections connecting said third stacked nonconductive substrate and said second stacked nonconductive substrate, at least one connection of said third plurality of connections connecting said at least one bond pad of said plurality of bond pads on said first surface of said third stacked nonconductive substrate to said at least one bond pad of the plurality of bond pads on the second surface of said second stacked nonconductive substrate.

Claim 25

The semiconductor assembly of claim 21 , wherein said first plurality of connections connecting said base substrate and said first stacked nonconductive substrate supports said first stacked nonconductive substrate.

Claim 26

The semiconductor assembly of claim 21 , wherein said second plurality of connections connecting said first stacked nonconductive substrate and said second stacked nonconductive substrate supports said second stacked nonconductive substrate.

Claim 27

The semiconductor assembly of claim 21 , wherein said first plurality of connections includes solder, conductive adhesives, Z-axis conductive material, flex-contacts, spring contacts, wire bonds, and TAB tape.

Claim 28

The semiconductor assembly of claim 21 , wherein said second plurality of connections includes solder, conductive adhesives, Z-axis conductive material, flex-contacts, spring contacts, wire bonds, and TAB tape.

Claim 29

The semiconductor assembly of claim 21 , further comprising: a fourth plurality of connections, at least one connection of said fourth plurality of connections connecting said at least one bond pad of said plurality of bond pads on said second surface of said base substrate to external electrical circuitry.

Claim 30

The semiconductor assembly of claim 21 , wherein each die of said plurality of first semiconductor dice disposed on said first surface of said first stacked nonconductive substrate is connected to said at least one trace of said second plurality of traces connected to said another bond pad of said plurality of bond pads on said first surface of said first stacked nonconductive substrate through one of flip chip attachment, wirebonding, TAB tape, or a combination thereof.

Claim 31

The semiconductor assembly of claim 21 , wherein each die of said plurality of second semiconductor dice disposed on said first surface of said second stacked nonconductive substrate is connected to said at least one trace of said second plurality of traces of said second stacked nonconductive substrate connected to said another bond pad of said plurality of bond pads on said first surface of said second stacked nonconductive substrate through one of flip chip attachment, wirebonding, TAB tape, and a combination thereof.

Claim 32

The semiconductor assembly of claim 21 , further comprising: a second semiconductor die disposed on said second surface of said first stacked nonconductive substrate, said second semiconductor die connected to said at least one bond pad of said plurality of bond pads on said second surface of said first stacked nonconductive substrate.

Claim 33

The semiconductor assembly of claim 21 , further comprising: a second semiconductor die disposed on said second surface of said first stacked nonconductive substrate, said second semiconductor die connected to said at least one bond pad of said plurality of bond pads on said second surface of said first stacked nonconductive substrate; and a third semiconductor die disposed on said second surface of said second stacked nonconductive substrate, said third semiconductor die connected to said at least one bond pad of said plurality of bond pads on said second surface of said second stacked nonconductive substrate.