Patent US6399496B1 successfully refreshed from Google Patents.
US6399496B1
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Copper interconnection structure incorporating a metal seed layer
Assignee: GlobalFoundries Inc
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Filing: 2000-11-16
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Granted: 2002-06-04
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Expires: 2020-11-16
Abstract
Abstract The present invention discloses an interconnection structure for providing electrical communication with an electronic device which includes a body that is formed substantially of copper and a seed layer of either a copper alloy or a metal that does not contain copper sandwiched between the copper conductor body and the electronic device for improving the electromigration resistance, the adhesion property and other surface properties of the interconnection structure. The present invention also discloses methods for forming an interconnection structure for providing electrical connections to an electronic device by first depositing a seed layer of copper alloy or other metal that does not contain copper on an electronic device, and then forming a copper conductor body on the seed layer intimately bonding to the layer such that electromigration resistance, adhesion and other surface properties of the interconnection structure are improved.
Inventors
- 👤 Daniel Charles Edelstein
- 👤 James Mckell Edwin Harper
- 👤 Chao-Kun Hu
- 👤 Andrew H. Simon
- 👤 Cyprian Emeka Uzoh
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 12:22
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10W20/042; H10W20/056; H10W20/40; H10W20/41; H10W20/425; H10W20/44; H10W20/4403; H10W20/4421; H10W20/4424
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
90 words
A method for forming an interconnection structure for providing electrical connection to an electronic device comprising the steps of: depositing a copper alloy seed layer on an electronic device, and forming a copper conductor body on said copper alloy seed layer intimately bonding to said layer such that electromigration resistance of said interconnection structure is improved, said copper conductor body is formed by copper and between about 0.001 and about 10 weight percent of at least one alloying element selected from the group consisting of C, N, Cl and O.
Claim 2
Independent Claim
90 words
A method for forming an interconnection structure for providing electrical connection to an electronic device comprising the steps of: depositing a copper alloy seed layer on an electronic device, and forming a copper conductor body on said copper alloy seed layer intimately bonding to said layer such that electromigration resistance of said interconnection structure is improved, said copper conductor body is formed by copper and between about 0.001 and about 10 weight percent of at least one alloying element selected from the group consisting of C, N, Cl and O.
Claim 3
Dependent Claim
36 words
A method according to claim 1 , wherein said copper alloy seed layer comprises copper and at least one element selected from the group consisting of Sn, In, Zr, Ti, C, O, Cl, N and S.
Claim 4
Dependent Claim
37 words
A method according to claim 1 , wherein said copper alloy seed layer is deposited by a technique selected from the group consisting of reactive or non-reactive sputtering, ionized sputtering, chemical vapor deposition, evaporation and electrochemical means.
Claim 5
Dependent Claim
26 words
A method according to claim 1 , wherein said copper alloy seed layer is deposited to a thickness between about 0.1 nm and about 100 nm.
Claim 6
Dependent Claim
31 words
A method according to claim 1 further comprising the step of depositing a diffusion barrier layer on said electronic device prior to the deposition step for said copper alloy seed layer.
Claim 7
Dependent Claim
36 words
A method according to claim 5 , wherein said diffusion barrier layer is deposited of a material selected from the group consisting of Ti, Ta, Nb, Mo, TaN, W, WN, TiN, TaSiN, WSiN, TiAlN and TiSiN.
Claim 8
Dependent Claim
22 words
A method according to claim 1 , wherein said interconnection structure is formed in multi-levels having between 2 and 10 wiring levels.
Claim 9
Independent Claim
88 words
A method for forming an interconnection structure for providing electrical communication with an electronic device having improved adhesion with said device comprising the steps of: depositing a copper alloy seed layer on said electronic device, said seed layer comprises copper and at least one element selected from the group consisting of Al, Mg, Be, Ca, Sr, Ba, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Pb, Dy, Ho, Er, Tm, Yb, Lu, Si and Ge, and forming a copper conductor body on said copper alloy seed layer.
Claim 10
Independent Claim
88 words
A method for forming an interconnection structure for providing electrical communication with an electronic device having improved adhesion with said device comprising the steps of: depositing a copper alloy seed layer on said electronic device, said seed layer comprises copper and at least one element selected from the group consisting of Al, Mg, Be, Ca, Sr, Ba, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Pb, Dy, Ho, Er, Tm, Yb, Lu, Si and Ge, and forming a copper conductor body on said copper alloy seed layer.
Claim 11
Dependent Claim
31 words
A method according to claim 8 further comprising the step of depositing a diffusion barrier layer on said electronic device prior to the deposition step for said copper alloy seed layer.
Claim 12
Dependent Claim
36 words
A method according to claim 9 , wherein said diffusion barrier layer is deposited of a material selected from the group consisting of Ti, Ta, Nb, Mo, TaN, W, WN, TiN, TaSiN, WSiN, TiAlN and TiSiN.
Claim 13
Dependent Claim
34 words
A method according to claim 9 , wherein said copper alloy seed layer is deposited by a technique selected from the group consisting of sputtering, ionized sputtering, chemical vapor deposition, evaporation and electrochemical means.
Claim 14
Dependent Claim
43 words
A method according to claim 8 , wherein said copper conductor body is formed by copper and between about 0.001 and about 10 weight percent of at least one alloying element selected from the group consisting of C, Cl, N, O and S.
Claim 15
Dependent Claim
26 words
A method according to claim 8 , wherein said copper alloy seed layer is deposited to a thickness between about 0.1 nm and about 100 nm.
Claim 16
Independent Claim
75 words
A method for forming a conductor for providing electrical communication with an electronic device comprising the steps of: depositing a copper alloy seed layer on said electronic device, and forming a copper conductor on top of and in intimate contact with said copper alloy seed layer of copper and between about 0.001 and about 10 weight percent of at least one alloying element selected from the group consisting of C, Cl, N, O and S.
Claim 17
Independent Claim
75 words
A method for forming a conductor for providing electrical communication with an electronic device comprising the steps of: depositing a copper alloy seed layer on said electronic device, and forming a copper conductor on top of and in intimate contact with said copper alloy seed layer of copper and between about 0.001 and about 10 weight percent of at least one alloying element selected from the group consisting of C, Cl, N, O and S.
Claim 18
Dependent Claim
34 words
A method according to claim 14 , wherein said copper alloy seed layer is deposited by a technique selected from the group consisting of sputtering, ionized sputtering, chemical vapor deposition, evaporation and electrochemical means.
Claim 19
Dependent Claim
26 words
A method according to claim 14 , wherein said copper alloy seed layer is deposited to a thickness between about 0.1 nm and about 100 nm.
Claim 20
Dependent Claim
60 words
A method according to claim 14 , further comprising the step of depositing a diffusion barrier layer on said electronic device prior to the deposition step for said copper alloy seed layer, said diffusion barrier layer is deposited of a material selected from the group consisting of Ti, TiN, Ta, Nb, Mo, TaN, W, WN, TaSiN, WSiN, TiAlN and TiSiN.
Claim 21
Independent Claim
76 words
A method for forming a conductor for providing electrical communication with an electronic device comprising the steps of: depositing a metal seed layer on top of said electronic device, said metal seed layer is deposited of a metal that has a solubility in and an affinity with copper so low such that no copper compound can be formed, and forming a copper conductor body on top of and in intimate contact with said metal seed layer.
Claim 22
Independent Claim
76 words
A method for forming a conductor for providing electrical communication with an electronic device comprising the steps of: depositing a metal seed layer on top of said electronic device, said metal seed layer is deposited of a metal that has a solubility in and an affinity with copper so low such that no copper compound can be formed, and forming a copper conductor body on top of and in intimate contact with said metal seed layer.
Claim 23
Dependent Claim
28 words
A method according to claim 18 , wherein said metal seed layer is deposited of a metal selected from the group consisting of Ag, Mo, W and Co.
Claim 24
Dependent Claim
22 words
A method according to claim 18 , wherein said metal has an electrical resistivity substantially similar to the electrical resistivity of copper.
Claim 25
Dependent Claim
23 words
A method according to claim 18 , wherein said metal seed layer having a thickness between about 0.1 nm and about 100 nm.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2005-06-03 | 2005-12-03 | 2006-06-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-06-03 | 2009-12-03 | 2010-06-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-06-03 | 2013-12-03 | 2014-06-04 | $7700.00 | Window Closed / Lapsed |