US6181012B1 — Copper interconnection structure incorporating a …

Claim 1

Independent Claim 73 words

An interconnection structure for providing electrical connections to an electronic device comprising: a body formed of copper and between about 0.001 and about 10 weight percent of at least one alloying element selected from the group consisting of C, N, Cl, O and S, and a copper alloy seed layer sandwiched in between and in intimate contact with both said body and said electronic device for improving electromigration resistance of said interconnection structure.

Claim 2

Dependent Claim 73 words

An interconnection structure for providing electrical connections to an electronic device comprising: a body formed of copper and between about 0.001 and about 10 weight percent of at least one alloying element selected from the group consisting of C, N, Cl, O and S, and a copper alloy seed layer sandwiched in between and in intimate contact with both said body and said electronic device for improving electromigration resistance of said interconnection structure.

Claim 3

Dependent Claim 37 words

An interconnection structure according to claim 1 , wherein said copper alloy seed layer comprises copper and at least one element selected from the group consisting of Sn, In, Zr, Ti, C, N, O, Cl and S.

Claim 4

Dependent Claim 25 words

An interconnection structure according to claim 1 , wherein said copper alloy seed layer has a thickness between about 0.1 nm and about 100 nm.

Claim 5

Dependent Claim 26 words

An interconnection structure according to claim 1 , wherein said copper alloy seed layer has a thickness preferably between about 1 nm and about 100 nm.

Claim 6

Dependent Claim 31 words

An interconnection structure according to claim 1 , wherein said copper alloy seed layer is formed of a metal compound, a metal solid solution or a two-phase mixtures of metal phases.

Claim 7

Dependent Claim 26 words

An interconnection structure according to claim 1 , wherein said copper alloy seed layer is a copper containing about 0.5 atomic % of Sn or In.

Claim 8

Dependent Claim 17 words

An interconnection structure according to claim 1 , wherein said structure is used either on-chip or off-chip.

Claim 9

Dependent Claim 35 words

An interconnection structure according to claim 1 , wherein said structure is a member selected from the group consisting of a via, a line, a stud and a wiring lead for TAB, BGA or PGA.

Claim 10

Dependent Claim 23 words

An interconnection structure according to claim 1 , wherein said interconnection structure is a multi-level structure having between 2 and 10 wiring levels.

Claim 11

Dependent Claim 29 words

An interconnection structure according to claim 1 , wherein said interconnection structure is built on a previously deposited layer of metal silicide or W stud and W local interconnections.

Claim 12

Dependent Claim 97 words

An interconnection structure for providing electrical connection to an electronic device comprising: a copper conductor body, and a copper alloy seed layer sandwiched in between and in intimate contact with both said copper conductor body and a diffusion barrier layer formed on said electronic device for improving adhesion to said underlying diffusion barrier layer, said copper alloy seed layer comprises copper and at least one element selected from the group consisting of Al, Mg, Be, Ca, Sr, Ba, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Pb, Dy, Ho, Er, Tm, Yb, Lu, Si and Ge.

Claim 13

Dependent Claim 97 words

An interconnection structure for providing electrical connection to an electronic device comprising: a copper conductor body, and a copper alloy seed layer sandwiched in between and in intimate contact with both said copper conductor body and a diffusion barrier layer formed on said electronic device for improving adhesion to said underlying diffusion barrier layer, said copper alloy seed layer comprises copper and at least one element selected from the group consisting of Al, Mg, Be, Ca, Sr, Ba, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Pb, Dy, Ho, Er, Tm, Yb, Lu, Si and Ge.

Claim 14

Dependent Claim 28 words

An interconnection structure according to claim 11 , wherein said copper alloy seed layer has an electrical resistivity larger than the electrical resistivity for the copper conductor body.

Claim 15

Dependent Claim 25 words

An interconnection structure according to claim 11 , wherein said copper alloy seed layer has a thickness between about 0.1 nm and about 100 nm.

Claim 16

Dependent Claim 47 words

An interconnection structure according to claim 11 , wherein copper conductor body is formed substantially of copper is formed by copper and between about 0.001 and about 10 weight percent of at least one alloying element selected from the group consisting of C, N, Cl and O.

Claim 17

Dependent Claim 31 words

An interconnection structure according to claim 11 , wherein said copper alloy seed layer is formed of a metal compound, a metal solid solution or a two-phase mixtures of metal phases.

Claim 18

Dependent Claim 35 words

An interconnection structure according to claim 11 , wherein said structure is a member selected from the group consisting of a via, a line, a stud and a wiring lead for TAB, BGA or PGA.

Claim 19

Dependent Claim 23 words

An interconnection structure according to claim 11 , wherein said interconnection structure is a multi-level structure having between 2 and 10 wiring levels.

Claim 20

Dependent Claim 22 words

An interconnection structure according to claim 11 , wherein said interconnection structure is built on a previously deposited layer of metal silicide.

Claim 21

Dependent Claim 84 words

An interconnection system for providing electrical connection to an electronic device comprising: a copper conductor body, and a copper alloy seed layer sandwiched in between and in intimate contact with both said copper conductor body and said electronic device for improving the surface properties of the electronic device, said copper alloy seed layer comprises copper and at least one element selected from the group consisting of B, O, N, P, Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt, Ag, Au, Zn and Cd.

Claim 22

Dependent Claim 84 words

An interconnection system for providing electrical connection to an electronic device comprising: a copper conductor body, and a copper alloy seed layer sandwiched in between and in intimate contact with both said copper conductor body and said electronic device for improving the surface properties of the electronic device, said copper alloy seed layer comprises copper and at least one element selected from the group consisting of B, O, N, P, Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt, Ag, Au, Zn and Cd.

Claim 23

Dependent Claim 25 words

An interconnection system according to claim 19 , wherein said copper alloy seed layer has a thickness between about 0.1 nm and about 100 nm.

Claim 24

Dependent Claim 35 words

An interconnection system according to claim 19 , wherein said structure is a member selected from the group consisting of a via, a line, a stud and a wiring lead for TAB, BGA or PGA.

Claim 25

Dependent Claim 48 words

An interconnection system according to claim 19 , wherein said copper conductor body formed substantially of copper is formed by copper and between about 0.001 and about 10 weight percent of at least one alloying element selected from the group consisting of C, N, O, Cl and S.

Claim 26

Dependent Claim 18 words

An interconnection system according to claim 19 , wherein said copper alloy seed la-phase mixtures of metal phases.

Claim 27

Dependent Claim 86 words

An interconnection system for providing electrical connection to an electronic device comprises: a copper conductor body, and a metal seed layer sandwiched in between and in intimate contact with both said copper conductor body and said electronic device for improving the copper conductor deposition process, said metal seed layer is deposited of a metal which has a solubility in copper so low such that substantially no copper compounds can be formed, said metal seed layer having a thickness between about 0.1 nm and about 100 nm.

Claim 28

Dependent Claim 86 words

An interconnection system for providing electrical connection to an electronic device comprises: a copper conductor body, and a metal seed layer sandwiched in between and in intimate contact with both said copper conductor body and said electronic device for improving the copper conductor deposition process, said metal seed layer is deposited of a metal which has a solubility in copper so low such that substantially no copper compounds can be formed, said metal seed layer having a thickness between about 0.1 nm and about 100 nm.

Claim 29

Dependent Claim 37 words

An interconnection system according to claim 24 , wherein said diffusion barrier layer is deposited of a material selected from the group consisting of Ti, Ta, Nb, Mo, TaN, W, WN, TiN, TaSiN, WSiN, TiAlN and TiSiN.

Claim 30

Dependent Claim 17 words

An interconnection system according to claim 24 , wherein said structure is used either on-chip or off-chip.

Claim 31

Dependent Claim 35 words

An interconnection structure according to claim 24 , wherein said structure is a member selected from the group consisting of a via, a line, a stud and a wiring lead for TAB, BGA or PGA.

Claim 32

Dependent Claim 23 words

An interconnection structure according to claim 24 , wherein said interconnection structure is a multi-level structure having between 2 and 10 wiring levels.

Claim 33

Dependent Claim 23 words

An interconnection system according to claim 24 , wherein said metal has an electrical resistivity substantially similar to the electrical resistivity of copper.

Claim 34

Dependent Claim 23 words

An interconnection system according to claim 24 , wherein said metal is selected from the group consisting of Ag, Mo, W and Co.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	2004-01-30	2004-07-31	2005-01-30	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	2008-01-30	2008-07-31	2009-01-30	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2012-01-30	2012-07-31	2013-01-30	$7700.00	Window Closed / Lapsed

Copper interconnection structure incorporating a metal seed layer

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