Patent EP0416928A2 successfully refreshed from Google Patents.
Patent US6181012B1 successfully refreshed from Google Patents.
US6181012B1
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Copper interconnection structure incorporating a metal seed layer
Assignee: GlobalFoundries Inc
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Filing: 1998-04-27
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Granted: 2001-01-30
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Expires: 2018-04-27
Abstract
Abstract The present invention discloses an interconnection structure for providing electrical communication with an electronic device which includes a body that is formed substantially of copper and a seed layer of either a copper alloy or a metal that does not contain copper sandwiched between the copper conductor body and the electronic device for improving the electromigration resistance, the adhesion property and other surface properties of the interconnection structure. The present invention also discloses, methods for forming an interconnection structure for providing electrical connections to an electronic device by first depositing a seed layer of copper alloy or other metal that does not contain copper on an electronic device, and then forming a copper conductor body on the seed layer intimately bonding to the layer such that electromigration resistance, adhesion and other surface properties of the interconnection structure are improved.
Inventors
- 👤 Daniel Charles Edelstein
- 👤 James Mckell Edwin Harper
- 👤 Chao-Kun Hu
- 👤 Andrew H. Simon
- 👤 Cyprian Emeka Uzoh
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 08:25
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10W20/042; H10W20/056; H10W20/40; H10W20/41; H10W20/425; H10W20/44; H10W20/4403; H10W20/4421; H10W20/4424
Claims Analysis
Total Claims: 34
Claim 1
Independent Claim
73 words
An interconnection structure for providing electrical connections to an electronic device comprising: a body formed of copper and between about 0.001 and about 10 weight percent of at least one alloying element selected from the group consisting of C, N, Cl, O and S, and a copper alloy seed layer sandwiched in between and in intimate contact with both said body and said electronic device for improving electromigration resistance of said interconnection structure.
Claim 2
Dependent Claim
73 words
An interconnection structure for providing electrical connections to an electronic device comprising: a body formed of copper and between about 0.001 and about 10 weight percent of at least one alloying element selected from the group consisting of C, N, Cl, O and S, and a copper alloy seed layer sandwiched in between and in intimate contact with both said body and said electronic device for improving electromigration resistance of said interconnection structure.
Claim 3
Dependent Claim
37 words
An interconnection structure according to claim 1 , wherein said copper alloy seed layer comprises copper and at least one element selected from the group consisting of Sn, In, Zr, Ti, C, N, O, Cl and S.
Claim 4
Dependent Claim
25 words
An interconnection structure according to claim 1 , wherein said copper alloy seed layer has a thickness between about 0.1 nm and about 100 nm.
Claim 5
Dependent Claim
26 words
An interconnection structure according to claim 1 , wherein said copper alloy seed layer has a thickness preferably between about 1 nm and about 100 nm.
Claim 6
Dependent Claim
31 words
An interconnection structure according to claim 1 , wherein said copper alloy seed layer is formed of a metal compound, a metal solid solution or a two-phase mixtures of metal phases.
Claim 7
Dependent Claim
26 words
An interconnection structure according to claim 1 , wherein said copper alloy seed layer is a copper containing about 0.5 atomic % of Sn or In.
Claim 8
Dependent Claim
17 words
An interconnection structure according to claim 1 , wherein said structure is used either on-chip or off-chip.
Claim 9
Dependent Claim
35 words
An interconnection structure according to claim 1 , wherein said structure is a member selected from the group consisting of a via, a line, a stud and a wiring lead for TAB, BGA or PGA.
Claim 10
Dependent Claim
23 words
An interconnection structure according to claim 1 , wherein said interconnection structure is a multi-level structure having between 2 and 10 wiring levels.
Claim 11
Dependent Claim
29 words
An interconnection structure according to claim 1 , wherein said interconnection structure is built on a previously deposited layer of metal silicide or W stud and W local interconnections.
Claim 12
Dependent Claim
97 words
An interconnection structure for providing electrical connection to an electronic device comprising: a copper conductor body, and a copper alloy seed layer sandwiched in between and in intimate contact with both said copper conductor body and a diffusion barrier layer formed on said electronic device for improving adhesion to said underlying diffusion barrier layer, said copper alloy seed layer comprises copper and at least one element selected from the group consisting of Al, Mg, Be, Ca, Sr, Ba, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Pb, Dy, Ho, Er, Tm, Yb, Lu, Si and Ge.
Claim 13
Dependent Claim
97 words
An interconnection structure for providing electrical connection to an electronic device comprising: a copper conductor body, and a copper alloy seed layer sandwiched in between and in intimate contact with both said copper conductor body and a diffusion barrier layer formed on said electronic device for improving adhesion to said underlying diffusion barrier layer, said copper alloy seed layer comprises copper and at least one element selected from the group consisting of Al, Mg, Be, Ca, Sr, Ba, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Pb, Dy, Ho, Er, Tm, Yb, Lu, Si and Ge.
Claim 14
Dependent Claim
28 words
An interconnection structure according to claim 11 , wherein said copper alloy seed layer has an electrical resistivity larger than the electrical resistivity for the copper conductor body.
Claim 15
Dependent Claim
25 words
An interconnection structure according to claim 11 , wherein said copper alloy seed layer has a thickness between about 0.1 nm and about 100 nm.
Claim 16
Dependent Claim
47 words
An interconnection structure according to claim 11 , wherein copper conductor body is formed substantially of copper is formed by copper and between about 0.001 and about 10 weight percent of at least one alloying element selected from the group consisting of C, N, Cl and O.
Claim 17
Dependent Claim
31 words
An interconnection structure according to claim 11 , wherein said copper alloy seed layer is formed of a metal compound, a metal solid solution or a two-phase mixtures of metal phases.
Claim 18
Dependent Claim
35 words
An interconnection structure according to claim 11 , wherein said structure is a member selected from the group consisting of a via, a line, a stud and a wiring lead for TAB, BGA or PGA.
Claim 19
Dependent Claim
23 words
An interconnection structure according to claim 11 , wherein said interconnection structure is a multi-level structure having between 2 and 10 wiring levels.
Claim 20
Dependent Claim
22 words
An interconnection structure according to claim 11 , wherein said interconnection structure is built on a previously deposited layer of metal silicide.
Claim 21
Dependent Claim
84 words
An interconnection system for providing electrical connection to an electronic device comprising: a copper conductor body, and a copper alloy seed layer sandwiched in between and in intimate contact with both said copper conductor body and said electronic device for improving the surface properties of the electronic device, said copper alloy seed layer comprises copper and at least one element selected from the group consisting of B, O, N, P, Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt, Ag, Au, Zn and Cd.
Claim 22
Dependent Claim
84 words
An interconnection system for providing electrical connection to an electronic device comprising: a copper conductor body, and a copper alloy seed layer sandwiched in between and in intimate contact with both said copper conductor body and said electronic device for improving the surface properties of the electronic device, said copper alloy seed layer comprises copper and at least one element selected from the group consisting of B, O, N, P, Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt, Ag, Au, Zn and Cd.
Claim 23
Dependent Claim
25 words
An interconnection system according to claim 19 , wherein said copper alloy seed layer has a thickness between about 0.1 nm and about 100 nm.
Claim 24
Dependent Claim
35 words
An interconnection system according to claim 19 , wherein said structure is a member selected from the group consisting of a via, a line, a stud and a wiring lead for TAB, BGA or PGA.
Claim 25
Dependent Claim
48 words
An interconnection system according to claim 19 , wherein said copper conductor body formed substantially of copper is formed by copper and between about 0.001 and about 10 weight percent of at least one alloying element selected from the group consisting of C, N, O, Cl and S.
Claim 26
Dependent Claim
18 words
An interconnection system according to claim 19 , wherein said copper alloy seed la-phase mixtures of metal phases.
Claim 27
Dependent Claim
86 words
An interconnection system for providing electrical connection to an electronic device comprises: a copper conductor body, and a metal seed layer sandwiched in between and in intimate contact with both said copper conductor body and said electronic device for improving the copper conductor deposition process, said metal seed layer is deposited of a metal which has a solubility in copper so low such that substantially no copper compounds can be formed, said metal seed layer having a thickness between about 0.1 nm and about 100 nm.
Claim 28
Dependent Claim
86 words
An interconnection system for providing electrical connection to an electronic device comprises: a copper conductor body, and a metal seed layer sandwiched in between and in intimate contact with both said copper conductor body and said electronic device for improving the copper conductor deposition process, said metal seed layer is deposited of a metal which has a solubility in copper so low such that substantially no copper compounds can be formed, said metal seed layer having a thickness between about 0.1 nm and about 100 nm.
Claim 29
Dependent Claim
37 words
An interconnection system according to claim 24 , wherein said diffusion barrier layer is deposited of a material selected from the group consisting of Ti, Ta, Nb, Mo, TaN, W, WN, TiN, TaSiN, WSiN, TiAlN and TiSiN.
Claim 30
Dependent Claim
17 words
An interconnection system according to claim 24 , wherein said structure is used either on-chip or off-chip.
Claim 31
Dependent Claim
35 words
An interconnection structure according to claim 24 , wherein said structure is a member selected from the group consisting of a via, a line, a stud and a wiring lead for TAB, BGA or PGA.
Claim 32
Dependent Claim
23 words
An interconnection structure according to claim 24 , wherein said interconnection structure is a multi-level structure having between 2 and 10 wiring levels.
Claim 33
Dependent Claim
23 words
An interconnection system according to claim 24 , wherein said metal has an electrical resistivity substantially similar to the electrical resistivity of copper.
Claim 34
Dependent Claim
23 words
An interconnection system according to claim 24 , wherein said metal is selected from the group consisting of Ag, Mo, W and Co.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-01-30 | 2004-07-31 | 2005-01-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-01-30 | 2008-07-31 | 2009-01-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-01-30 | 2012-07-31 | 2013-01-30 | $7700.00 | Window Closed / Lapsed |