Patent US6342277B1 successfully refreshed from Google Patents.
US6342277B1
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Sequential chemical vapor deposition
Assignee: ASM International NV
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Filing: 1999-04-14
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Granted: 2002-01-29
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Expires: 2019-04-14
Abstract
Abstract The present invention provides for sequential chemical vapor deposition by employing a reactor operated at low pressure, a pump to remove excess reactants, and a line to introduce gas into the reactor through a valve. A first reactant forms a monolayer on the part to be coated, while the second reactant passes through a radical generator which partially decomposes or activates the second reactant into a gaseous radical before it impinges on the monolayer. This second reactant does not necessarily form a monolayer but is available to react with the monolayer. A pump removes the excess second reactant and reaction products completing the process cycle. The process cycle can be repeated to grow the desired thickness of film.
Inventors
- 👤 Arthur Sherman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:09
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45523; C23C16/45525; C23C16/45527; C23C16/45531; C23C16/448; C23C16/452; C23C16/45529; C23C16/45536; C23C16/4554; C23C16/45542; C23C16/45544; C23C16/50; C30; C30B; C30B25/00; C30B25/02; C30B25/14
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
214 words
A process of growing a thin film by a sequential chemical vapor deposition process including a plurality of cycles, wherein at least one cycle comprises: placing a part in a chamber, wherein the part comprises a semiconductor substrate having at least one opening therein and the film coats walls defining the opening; exposing the part to a gaseous first reactant, including an element of the thin film to be formed, wherein at least a portion of the first reactant adsorbs on the part; purging the chamber of the gaseous first reactant; converting the portion of the first reactant adsorbed on the part to either an element or compound by exposing the part to a gaseous second reactant that includes radicals created by a plasma discharge, whereby a thin film is formed; and purging the chamber of the gaseous second reactant; wherein the first reactant comprises a molecule containing a metal atom and converting comprises reducing the portion of the first reactant adsorbed on the part to metal; and wherein reducing the portion of the first reactant adsorbed on the part to metal comprises: first reducing the portion of the first reactant adsorbed on the part to an initial metal oxide; and second reducing the initial metal oxide to metal by exposure to hydrogen radicals.
Claim 2
Dependent Claim
214 words
A process of growing a thin film by a sequential chemical vapor deposition process including a plurality of cycles, wherein at least one cycle comprises: placing a part in a chamber, wherein the part comprises a semiconductor substrate having at least one opening therein and the film coats walls defining the opening; exposing the part to a gaseous first reactant, including an element of the thin film to be formed, wherein at least a portion of the first reactant adsorbs on the part; purging the chamber of the gaseous first reactant; converting the portion of the first reactant adsorbed on the part to either an element or compound by exposing the part to a gaseous second reactant that includes radicals created by a plasma discharge, whereby a thin film is formed; and purging the chamber of the gaseous second reactant; wherein the first reactant comprises a molecule containing a metal atom and converting comprises reducing the portion of the first reactant adsorbed on the part to metal; and wherein reducing the portion of the first reactant adsorbed on the part to metal comprises: first reducing the portion of the first reactant adsorbed on the part to an initial metal oxide; and second reducing the initial metal oxide to metal by exposure to hydrogen radicals.
Claim 3
Dependent Claim
17 words
The process of claim 1 , wherein the first reducing comprises exposing the part to oxygen radicals.
Claim 4
Dependent Claim
122 words
A process of growing a thin film by a sequential chemical vapor deposition process including a plurality of cycles, wherein at least one cycle comprises: placing a part in a chamber; exposing the part to a gaseous first reactant including metal, wherein at least a portion of the first reactant adsorbs on the part; purging the chamber of the gaseous first reactant; initially reducing the portion of the first reactant adsorbed on the part to an initial metal oxide by exposing the part to a gaseous second reactant; purging the chamber of the gaseous second reactant; further reducing the initial metal oxide to metal by exposing the part to a gaseous third reactant; and purging the chamber of the gaseous third reactant.
Claim 5
Dependent Claim
122 words
A process of growing a thin film by a sequential chemical vapor deposition process including a plurality of cycles, wherein at least one cycle comprises: placing a part in a chamber; exposing the part to a gaseous first reactant including metal, wherein at least a portion of the first reactant adsorbs on the part; purging the chamber of the gaseous first reactant; initially reducing the portion of the first reactant adsorbed on the part to an initial metal oxide by exposing the part to a gaseous second reactant; purging the chamber of the gaseous second reactant; further reducing the initial metal oxide to metal by exposing the part to a gaseous third reactant; and purging the chamber of the gaseous third reactant.
Claim 6
Dependent Claim
14 words
The process of claim 3 , wherein the gaseous third reactant includes hydrogen radicals.
Claim 7
Dependent Claim
14 words
The process of claim 3 , wherein the gaseous second reactant includes oxygen radicals.
Claim 8
Dependent Claim
11 words
The process of claim 3 , wherein the metal comprises copper.
Claim 9
Dependent Claim
28 words
The process of claim 3 , further comprising additional cycles wherein the portion of the first reactant adsorbed is directly reduced to metal, without the initial metal oxide.
Claim 10
Dependent Claim
27 words
The process of claim 7 , wherein the part includes metallic surfaces and non-metallic surfaces and whereby the initial metal oxide avoids selective deposition on the part.
Claim 11
Dependent Claim
19 words
The process of claim 3 , further comprising purging the gaseous second reactant between initially reducing and further reducing.
Claim 12
Dependent Claim
21 words
The process of claim 9 , further comprising purging the chamber of reactants after further reducing and prior to further cycles.
References Cited (Backward Citations)
US4058430A
Cited
US4282267A
Cited
US5443033A
Cited
US5294286A
Cited
US5693139A
Cited
US4935661A
Cited
US5769950A
Cited
US4761269A
Cited
US4747367A
Cited
US4851095A
Cited
US5484664A
Cited
US5300186A
Cited
US5374570A
Cited
US5618395A
Cited
EP0442490A1
Cited
US5071670A
Cited
US5281274A
Cited
US5483919A
Cited
US5321713A
Cited
US5356673A
Cited
EP0526779A1
Cited
US5291066A
Cited
US5458084A
Cited
US5395791A
Cited
US5278435A
Cited
US5469806A
Cited
US5443647A
Cited
US5330610A
Cited
US5496582A
Cited
US5730802A
Cited
US5707880A
Cited
US5641984A
Cited
US5711811A
Cited
US5855680A
Cited
US5916365A
Cited
US6270572B1
Cited
US6200893B1
Cited
WO2000063957A1
Cited
US6203613B1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2005-01-28 | 2005-07-30 | 2006-01-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-01-28 | 2009-07-30 | 2010-01-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-01-28 | 2013-07-30 | 2014-01-29 | $7700.00 | Window Closed / Lapsed |