US6337291B1
Expired / Lapsed
US
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Method of forming capacitor for semiconductor memory device
Assignee: SK Hynix Inc
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Filing: 2000-06-30
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Granted: 2002-01-08
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Expires: 2020-06-30
Abstract
Abstract Disclosed herein is a method of forming a capacitor for a semiconductor memory device. The method comprises a step of:forming a lower electrode on the semiconductor substrate; forming an O 3 -oxide film on the lower electrode; forming Si—O—N bonds on the surface of the O 3 -oxide film; forming a TaON film on the Si—O—N bonds by a chemical vapor deposition of a Ta chemical vapor, an O 2 gas and an NH 3 gas; and forming an upper electrode on the TaON film.
Inventors
- 👤 Dong Su Park
- 👤 Tae Hyeok Lee
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 05:03
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6927; H10B; H10B12/00; H10P14/65; H10P14/6516; H10P14/6518; H10P14/6524; H10P14/6526; H10P14/6529; H10P14/6532; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10D; H10D1/00; H10D1/01; H10D1/041; H10D1/042; H10D1/60; H10D1/68; H10D1/692; H10D1/711; H10D1/712; H10D1/716; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/6544; H10P14/6938; H10P14/6939; H10P14/69393
Claims Analysis
Total Claims: 27
Claim 1
Independent Claim
80 words
A method of forming a capacitor on a semiconductor substrate, comprising the steps of: forming a lower electrode on the semiconductor substrate; forming an O 3 -oxide film on the lower electrode; forming Si—O—N bonds on the surface of the O 3 -oxide film; forming a TaON film on the Si—O—N bonds by a chemical vapor deposition of a Ta chemical vapor, an O 2 gas and an NH 3 gas; and forming an upper electrode on the TaON film.
Claim 2
Independent Claim
80 words
A method of forming a capacitor on a semiconductor substrate, comprising the steps of: forming a lower electrode on the semiconductor substrate; forming an O 3 -oxide film on the lower electrode; forming Si—O—N bonds on the surface of the O 3 -oxide film; forming a TaON film on the Si—O—N bonds by a chemical vapor deposition of a Ta chemical vapor, an O 2 gas and an NH 3 gas; and forming an upper electrode on the TaON film.
Claim 3
Dependent Claim
32 words
The method of claim 1 , in which the O 3 oxide film is formed by a supply of an O 3 gas at a temperature of 200° C. to 500° C.
Claim 4
Dependent Claim
24 words
The method of claim 1 , in which the O 3 oxide film is formed to have a thickness of 5 to 20 Å.
Claim 5
Dependent Claim
23 words
The method of claim 1 , in which the O 3 oxide film is formed while being irradiated with light from an UV-lamp.
Claim 6
Dependent Claim
22 words
The method of claim 1 , in which the Si—O—N bond is formed at a temperature of 300 to 500 ° C.
Claim 7
Dependent Claim
30 words
The method of claim 1 , in which the Si—O—N bonds are formed by a plasma processing of the O 3 oxide film surface under an NH 3 gas atmosphere.
Claim 8
Dependent Claim
43 words
The method of claim 6 , in which the Si—O—N bond is formed by a supply of a NH 3 gas at a flow rate of about 10 to 1000 SCCM, and by an application of a power of 20 to 50 watts.
Claim 9
Dependent Claim
41 words
The method of claim 1 , in which the formation of the TaON film is carried out in a LPCVD chamber, which is maintained at a temperature of 300 to 600 ° C. and a pressure of 0.1 to 1.2 Torr.
Claim 10
Dependent Claim
28 words
The method of claim 8 , in which the Ta chemical vapor is obtained by vaporizing a tantalum-containing precursor at a temperature of 150 to 200 ° C.
Claim 11
Dependent Claim
31 words
The method of claim 8 , in which the O 2 gas and the NH 3 gas are supplied at a flow rate of about 10 SCCM to 1000 SCCM, respectively.
Claim 12
Dependent Claim
31 words
The method of claim 1 , further comprising a step of: post-processing the TaON film, between the step of forming the TaON film and the step of forming the upper electrode.
Claim 13
Dependent Claim
47 words
The method of claim 11 , in which the post-processing step of the TaON film is carried out by a plasma thermal annealing of the TaON film at a temperature of 200° C. to 600° C. under an NH 3 or N 2 /H 2 gas atmosphere.
Claim 14
Dependent Claim
60 words
The method of claim 11 , in which the post-processing step of the TaON film is carried out by a rapid thermal processing or a furnace annealing, for 30 seconds to 30 minutes at less than 700° C. under a gas atmosphere selected from NH 3 gas, N 2 /H 2 gas, N 2 O gas, and O 2 gas.
Claim 15
Independent Claim
108 words
A method of forming a capacitor on a semiconductor substrate, comprising the steps of: forming a lower electrode on the semiconductor substrate; forming an O 3 oxide film on the lower electrode by supplying O 3 gas at a temperature of 200° C. to 500° C.; forming Si—O—N bonds on the surface of the O 3 oxide film; forming a TaON film on the Si—O—N bonds by a chemical vapor deposition of a Ta chemical vapor, an O 2 gas and an NH 3 gas at a temperature of 300° C. to 600° C.; thermally annealing the TaON film; and forming an upper electrode on the TaON film.
Claim 16
Independent Claim
108 words
A method of forming a capacitor on a semiconductor substrate, comprising the steps of: forming a lower electrode on the semiconductor substrate; forming an O 3 oxide film on the lower electrode by supplying O 3 gas at a temperature of 200° C. to 500° C.; forming Si—O—N bonds on the surface of the O 3 oxide film; forming a TaON film on the Si—O—N bonds by a chemical vapor deposition of a Ta chemical vapor, an O 2 gas and an NH 3 gas at a temperature of 300° C. to 600° C.; thermally annealing the TaON film; and forming an upper electrode on the TaON film.
Claim 17
Dependent Claim
24 words
The method of claim 14 , in which the O 3 oxide film is formed to have a thickness of 5 to 20 Å.
Claim 18
Dependent Claim
23 words
The method of claim 14 , in which the O 3 oxide film is formed while being irradiated with light from an UV-lamp.
Claim 19
Dependent Claim
29 words
The method of claim 14 , in which the Si—O—N bonds are formed by a plasma processing of the O 3 oxide film surface under an NH 3 atmosphere.
Claim 20
Dependent Claim
43 words
The method of claim 16 , in which the Si—O—N bond is formed by a supply of a NH 3 gas at a flow rate of about 10 to 1000 SCCM, and by an application of a power of 20 to 500 Watts.
Claim 21
Dependent Claim
29 words
The method of claim 14 , in which the formation of the TaON film is carried out in a LPCVD chamber and a pressure of 0.1 to 1.2 Torr.
Claim 22
Dependent Claim
27 words
The method of claim 19 , in which the Ta chemical vapor is obtained by vaporizing a tantalum-containing precursor at a temperature of 150 to 200° C.
Claim 23
Dependent Claim
31 words
The method of claim 19 , in which the O 2 gas and the NH 3 gas are supplied at a flow rate of about 10 SCCM to 1000 SCCM, respectively.
Claim 24
Dependent Claim
48 words
The method of claim 14 , in which the step of thermally processing the TaON film is carried out by a plasma thermal processing of the TaON film at a temperature of 200° C. to 600° C. under an NH 3 or N 2 /H 2 gas atmosphere.
Claim 25
Dependent Claim
61 words
The method of claim 14 , in which the step of thermally processing the TaON film is carried out by a rapid thermal processing or a furnace annealing, for 30 seconds to 30 minutes at less than 700° C. under a gas atmosphere selected from NH 3 gas, N 2 /H 2 gas, N 2 O gas, and O 2 gas.
Claim 26
Independent Claim
92 words
A method of forming a capacitor on a semiconductor substrate, comprising, in order, the steps of: forming a lower electrode having an upper surface on the semiconductor substrate; forming an O 3 -oxide layer on the upper surface of the lower electrode; treating the O 3 -oxide layer to convert an upper portion of the O 3 -oxide layer and form a SiON film, a lower portion of the O 3 -oxide layer remaining unconverted; forming a TaON layer on the SiON film; and forming an upper electrode on the TaON layer.
Claim 27
Independent Claim
92 words
A method of forming a capacitor on a semiconductor substrate, comprising, in order, the steps of: forming a lower electrode having an upper surface on the semiconductor substrate; forming an O 3 -oxide layer on the upper surface of the lower electrode; treating the O 3 -oxide layer to convert an upper portion of the O 3 -oxide layer and form a SiON film, a lower portion of the O 3 -oxide layer remaining unconverted; forming a TaON layer on the SiON film; and forming an upper electrode on the TaON layer.
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