Abstract A method of forming a multilayer titanium nitride film hardly containing any Cl component by a multiple step chemical vapor deposition method, and a method of manufacturing a semiconductor device using the same are provided. In the present invention, a multilayer TiN film is formed by multiple step chemical vapor deposition (CVD) on a semiconductor substrate on which an underlayer is formed. In order to form the multilayer TiN film, an underlayer protective TiN film is formed by forming a first TiN film on the underlayer and NH 3 annealing the first TiN film. A main TiN film is formed by forming a second TiN film on the underlayer protective TiN film and NH 3 annealing the second TiN film. A source gas used in order to form the first TiN film has a smaller TiCl 4 to NH 3 gas flow ratio than a source gas for forming the second TiN film. In order to apply the multilayer TiN film to the fabrication of the semiconductor device, an insulating film having a contact hole is formed on a semiconductor substrate. A Ti film is formed on the inner wall of the contact hole. A multilayer TiN film is formed on the Ti film by the multiple step CVD method. A metal plug is formed on the multilayer TiN film.
A thermal CVD method of forming titanium nitride composite layer, comprising the steps of: depositing a first titanium nitride layer on a substrate by exposing the substrate to a first composite gas containing TiCl 4 and NH 3 at respective first levels that establish a first flow ratio of TiCl 4 to NH 3 in a range between about 0.02 and 0.05; annealing the first titanium nitride layer by exposing the first titanium nitride layer to a gas consisting essentially of NH 3 ; and depositing a second titanium nitride layer on the first titanium nitride layer by exposing the first titanium nitride layer to a second composite gas containing TiCl 4 and NH 3 at respective second levels that establish a second flow ratio of TiCl 4 to NH 3 that is greater than the first flow ratio.
Claim 2
Dependent Claim
139 words
A thermal CVD method of forming titanium nitride composite layer, comprising the steps of: depositing a first titanium nitride layer on a substrate by exposing the substrate to a first composite gas containing TiCl 4 and NH 3 at respective first levels that establish a first flow ratio of TiCl 4 to NH 3 in a range between about 0.02 and 0.05; annealing the first titanium nitride layer by exposing the first titanium nitride layer to a gas consisting essentially of NH 3 ; and depositing a second titanium nitride layer on the first titanium nitride layer by exposing the first titanium nitride layer to a second composite gas containing TiCl 4 and NH 3 at respective second levels that establish a second flow ratio of TiCl 4 to NH 3 that is greater than the first flow ratio.
Claim 3
Dependent Claim
117 words
A thermal CVD method of forming titanium nitride composite layer, comprising the steps of: depositing a first titanium nitride layer on a substrate by exposing the substrate to a first composite gas containing TiCl 4 and NH 3 at respective first levels that establish a first flow ratio of TiCl 4 to NH 3 in a range between about 0.02 and 0.05; and depositing a second titanium nitride layer on the first titanium nitride layer by exposing the first titanium nitride layer to a second composite gas containing TiCl 4 and NH 3 at respective second levels that establish a second flow ratio of TiCl 4 to NH 3 that is greater than the first flow ratio.
Claim 4
Dependent Claim
117 words
A thermal CVD method of forming titanium nitride composite layer, comprising the steps of: depositing a first titanium nitride layer on a substrate by exposing the substrate to a first composite gas containing TiCl 4 and NH 3 at respective first levels that establish a first flow ratio of TiCl 4 to NH 3 in a range between about 0.02 and 0.05; and depositing a second titanium nitride layer on the first titanium nitride layer by exposing the first titanium nitride layer to a second composite gas containing TiCl 4 and NH 3 at respective second levels that establish a second flow ratio of TiCl 4 to NH 3 that is greater than the first flow ratio.