US6005291A
Expired / Lapsed
US
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Semiconductor device and process for production thereof
Assignee: Renesas Electronics Corp
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Filing: 1998-08-21
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Granted: 1999-12-21
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Expires: 2018-08-21
Abstract
Abstract A semiconductor device comprising an insulating film at least partially containing a fluorine-containing film, formed above a semiconductor substrate, and a titanium nitride film formed on the insulating film. The above titanium film functions as a barrier metal film for barriering the diffusion of fluorine (F) atoms.
Inventors
- 👤 Kenichi Koyanagi
- 👤 Kunihiro Fujii
- 👤 Tatsuya Usami
- 👤 Koji Kishimoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 06:45
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/425; H10W20/42; H10W20/45; H10W20/48
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
49 words
A semiconductor device comprising an insulating film at least partially containing a fluorine-containing film, formed above a semiconductor substrate, a titanium nitride film formed on the insulating film, an upper wiring and a lower wiring, wherein an uppermost layer of the lower wiring comprises a first titanium nitride film.
Claim 2
Dependent Claim
49 words
A semiconductor device comprising an insulating film at least partially containing a fluorine-containing film, formed above a semiconductor substrate, a titanium nitride film formed on the insulating film, an upper wiring and a lower wiring, wherein an uppermost layer of the lower wiring comprises a first titanium nitride film.
Claim 3
Dependent Claim
21 words
A semiconductor device according to claim 1, wherein a lowermost layer of the upper wiring comprises a second titanium nitride film.
Claim 4
Dependent Claim
37 words
A semiconductor device according to claim 1, wherein the fluorine-containing film is at least one film selected from the group consisting of a fluorine-containing silicon oxide film, a fluororesin, a fluorinated polyimide and a fluorinated amorphous carbon.
Claim 5
Dependent Claim
33 words
A semiconductor device according to claim 1, further comprising a contacting port for connecting the first wiring and the second wiring, wherein sides of the contacting port comprise said first titanium nitride film.
Claim 6
Dependent Claim
34 words
A semiconductor device according to claim 1, further comprising a contacting port for connecting said first wiring and said second wiring, wherein a bottom of the contacting port comprises said first titanium nitride film.
Claim 7
Dependent Claim
62 words
A semiconductor device comprising a titanium film formed above a semiconductor substrate, an insulating film at least partially containing a fluorine-containing film, also formed above the semiconductor substrate, a lower wiring, an upper wiring, and a titanium nitride film formed between the titanium film and the insulating film, wherein an uppermost layer of the lower wiring comprises a first titanium nitride film.
Claim 8
Dependent Claim
62 words
A semiconductor device comprising a titanium film formed above a semiconductor substrate, an insulating film at least partially containing a fluorine-containing film, also formed above the semiconductor substrate, a lower wiring, an upper wiring, and a titanium nitride film formed between the titanium film and the insulating film, wherein an uppermost layer of the lower wiring comprises a first titanium nitride film.
Claim 9
Dependent Claim
37 words
A semiconductor device according to claim 6, wherein the fluorine-containing film is at least one film selected from the group consisting of a fluorine-containing silicon oxide film, a fluororesin, a fluorinated polyimide and a fluorinated amorphous carbon.
Claim 10
Dependent Claim
21 words
A semiconductor device according to claim 6, wherein a lowermost layer of the upper wiring comprises a second titanium nitride film.
Claim 11
Dependent Claim
33 words
A semiconductor device according to claim 6, further comprising a contacting port for connecting the first wiring and the second wiring, wherein sides of the contacting port comprise a second titanium nitride film.
Claim 12
Dependent Claim
20 words
A semiconductor device according to claim 9, wherein a bottom of the contacting port comprises said second titanium nitride film.
Claim 13
Dependent Claim
51 words
A semiconductor device comprising: a lower wiring, and an upper wiring, via an insulating film at least partially containing a fluorine-containing film, formed above a semiconductor substrate, and further comprising a contacting port for connecting the two wirings, wherein a bottom of the contacting port comprises a first titanium nitride film.
Claim 14
Dependent Claim
51 words
A semiconductor device comprising: a lower wiring, and an upper wiring, via an insulating film at least partially containing a fluorine-containing film, formed above a semiconductor substrate, and further comprising a contacting port for connecting the two wirings, wherein a bottom of the contacting port comprises a first titanium nitride film.
Claim 15
Dependent Claim
19 words
A semiconductor device according to claim 11, wherein sides of the contacting port comprise said second titanium nitride film.
Claim 16
Dependent Claim
37 words
A semiconductor device according to claim 11, wherein the fluorine-containing film is at least one film selected from the group consisting of a fluorine-containing silicon oxide film, a fluororesin, a fluorinated polyimide and a fluorinated amorphous carbon.
Claim 17
Dependent Claim
21 words
A semiconductor device according to claim 11, wherein an uppermost layer of the lower wiring comprises a second titanium nitride film.
Claim 18
Dependent Claim
21 words
A semiconductor device according to claim 11, wherein a lowermost layer of the upper wiring comprises said first titanium nitride film.
References Cited (Backward Citations)
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Cited
US5523626A
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JPH08321547A
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US5874779A
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JPH08288390A
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US5866484A
Cited
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