US5874779A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device with improved adhesion between titanium-based metal wiring layer and insulation film
Assignee: Toshiba Corp
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Filing: 1997-11-13
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Granted: 1999-02-23
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Expires: 2017-11-13
Abstract
Abstract A semiconductor device includes a substrate, an insulation film formed above the substrate and containing silicon-fluorine bonds, and a titanium-based metal wiring layer formed on the insulation film, the titanium-based metal wiring layer containing fluorine which is diffused from the insulation film and has a fluorine concentration of less than 1x1020 atoms/cm3.
Inventors
- 👤 Tadashi Matsuno
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 12:42
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6924; H10P14/65; H10P14/6516; H10P14/6529; H10P14/6532; H10P14/6536; H10P14/66; H10P14/662; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W20/4437; H10W20/4441; H10W20/45; H10W20/48; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/668; H10P14/6681; H10P14/6684; H10P14/6686; H10P95/00; H10W20/071; Y; Y10; Y10S; Y10S257/00; Y10S257/915
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
92 words
A semiconductor device, comprising: a substrate having a first and a second region; a first insulating film formed above said substrate and containing silicon-fluorine bonds, said first insulating film having a first thickness on said first region and having a second thickness greater than said first thickness on said second region; a titanium-based metal wiring layer formed on said first insulating film; and a second insulating film at least formed on said wiring layer and having an opening for wire bonding on said wiring layer above said first region of said substrate.
Claim 2
Dependent Claim
92 words
A semiconductor device, comprising: a substrate having a first and a second region; a first insulating film formed above said substrate and containing silicon-fluorine bonds, said first insulating film having a first thickness on said first region and having a second thickness greater than said first thickness on said second region; a titanium-based metal wiring layer formed on said first insulating film; and a second insulating film at least formed on said wiring layer and having an opening for wire bonding on said wiring layer above said first region of said substrate.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-02-22 | 2002-08-24 | 2003-02-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-02-22 | 2006-08-24 | 2007-02-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-02-22 | 2010-08-24 | 2011-02-23 | $7700.00 | Window Closed / Lapsed |