US5654235A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing contact structure using barrier metal
Assignee: Lapis Semiconductor Co Ltd
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Filing: 1995-06-22
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Granted: 1997-08-05
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Expires: 2015-06-22
Abstract
Abstract A titanium film is formed in a contact hole defined in a silicon substrate. The titanium film is transformed into a titanium silicide film and a first titanium nitride film by high-temperature lamp anneal. Further, a second titanium nitride film is stacked on the first titanium nitride film. Conditions are applied under which the titanium nitride films are formed into a granular crystal of primarily a (200) orientation. Therefore, barrier characteristics of the titanium nitride films to silicon atoms is not compromised even in the case of a subsequent high-temperature thermal treatment.
Inventors
- 👤 Ryoichi Matsumoto
- 👤 Yoshiyuki Kawazu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 06:47
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/40; H10W20/41; H10W20/425; Y; Y10; Y10S; Y10S257/00; Y10S257/915
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
134 words
A method of manufacturing a semiconductor device having an impurity diffusion layer formed on a silicon substrate and an ohmic contact including a metal interconnect, said ohmic contact being formed on the silicon substrate, said method comprising the steps of: defining a contact hole in an interlayer insulating film provided on the impurity diffusion layer; then forming a first titanium layer in the contact hole; then applying a thermal treatment by lamp anneal for transforming a surface on the titanium layer into a first titanium nitride layer and for orienting the first titanium nitride layer primarily in the form of a granular crystal with a (200) orientation; and then forming a second titanium nitride layer oriented primarily in the form of a granular crystal with a (200) orientation on the first titanium nitride layer.
Claim 2
Independent Claim
134 words
A method of manufacturing a semiconductor device having an impurity diffusion layer formed on a silicon substrate and an ohmic contact including a metal interconnect, said ohmic contact being formed on the silicon substrate, said method comprising the steps of: defining a contact hole in an interlayer insulating film provided on the impurity diffusion layer; then forming a first titanium layer in the contact hole; then applying a thermal treatment by lamp anneal for transforming a surface on the titanium layer into a first titanium nitride layer and for orienting the first titanium nitride layer primarily in the form of a granular crystal with a (200) orientation; and then forming a second titanium nitride layer oriented primarily in the form of a granular crystal with a (200) orientation on the first titanium nitride layer.
Claim 3
Dependent Claim
23 words
The method as claimed in claim 1, wherein the second titanium nitride layer has a thickness ranging from 30 nm to 100 nm.
Claim 4
Dependent Claim
16 words
The method as claimed in claim 1, wherein the metal interconnect is a refractory metal interconnected.
Claim 5
Dependent Claim
31 words
The method as claimed as claim 1, wherein the lamp anneal is carried out in an ambient of nitrogen or ammonia at a temperature ranging from 800° C. to 900° C.
Claim 6
Independent Claim
153 words
A method of manufacturing a semiconductor device having an impurity diffusion layer formed on a silicon substrate and an ohmic contact including a refractory metal interconnect, said ohmic contact being formed on the silicon substrate, said method comprising the steps of: defining a contact hole in an interlayer insulating film provided on the impurity diffusion layer; then forming a first titanium layer in the contact hole; then applying a first thermal treatment by lamp anneal for transforming a surface on the titanium layer into a first titanium nitride layer and for orienting the first titanium nitride layer primarily in the form of a granular crystal with a (200) orientation; then forming a second titanium nitride layer oriented primarily in the form of a granular crystal with a (200) orientation on the first titanium nitride layer; then forming the refractory metal interconnect on the second titanium nitride layer; and applying a second thermal treatment.
Claim 7
Independent Claim
153 words
A method of manufacturing a semiconductor device having an impurity diffusion layer formed on a silicon substrate and an ohmic contact including a refractory metal interconnect, said ohmic contact being formed on the silicon substrate, said method comprising the steps of: defining a contact hole in an interlayer insulating film provided on the impurity diffusion layer; then forming a first titanium layer in the contact hole; then applying a first thermal treatment by lamp anneal for transforming a surface on the titanium layer into a first titanium nitride layer and for orienting the first titanium nitride layer primarily in the form of a granular crystal with a (200) orientation; then forming a second titanium nitride layer oriented primarily in the form of a granular crystal with a (200) orientation on the first titanium nitride layer; then forming the refractory metal interconnect on the second titanium nitride layer; and applying a second thermal treatment.
Claim 8
Dependent Claim
24 words
The method as claimed in claim 5, wherein the second titanium nitride layer has a film thickness ranging from 30 nm to 100 nm.
Claim 9
Dependent Claim
16 words
The method as claimed in claim 5, wherein the refractory metal interconnect is a tungsten interconnect.
Claim 10
Dependent Claim
31 words
The method as claimed in claim 5, wherein the lamp anneal is carried out in an ambient of nitrogen or ammonia at a temperature ranging from 800° C. to 900° C.
Claim 11
Dependent Claim
24 words
The method as claimed in claim 5, wherein the second thermal treatment is performed at a temperature ranging from 850° C. to 950° C.
Claim 12
Independent Claim
130 words
A method of manufacturing a semiconductor device having an impurity diffusion layer formed on a silicon substrate and an ohmic contact including a metal interconnect, said ohmic contact being formed on the silicon substrate, said method comprising the steps of: defining a contact hole in an interlayer insulating film provided on the impurity diffusion layer; then forming a first refractory metal layer in the contact hole; then applying a thermal treatment by lamp anneal for transforming a surface on the refractory metal layer into a first refractory metal nitride layer and orienting the first refractory metal nitride layer primarily in the form of a granular crystal; and then forming a second refractory metal nitride layer primarily in the form of a granular crystal on the first refractory metal nitride layer.
Claim 13
Independent Claim
130 words
A method of manufacturing a semiconductor device having an impurity diffusion layer formed on a silicon substrate and an ohmic contact including a metal interconnect, said ohmic contact being formed on the silicon substrate, said method comprising the steps of: defining a contact hole in an interlayer insulating film provided on the impurity diffusion layer; then forming a first refractory metal layer in the contact hole; then applying a thermal treatment by lamp anneal for transforming a surface on the refractory metal layer into a first refractory metal nitride layer and orienting the first refractory metal nitride layer primarily in the form of a granular crystal; and then forming a second refractory metal nitride layer primarily in the form of a granular crystal on the first refractory metal nitride layer.
References Cited (Backward Citations)
DE3743591A1
Cited
US4937657A
Cited
JPH02119129A
Cited
US5231055A
Cited
JPH02235372A
Cited
US5162262A
Cited
US5049975A
Cited
US5000818A
Cited
JPH04112529A
Cited
US5155063A
Cited
EP0480409A1
Cited
JPH0513368A
Cited
US5444018A
Cited
US5242860A
Cited
JPH0536843A
Cited
JPH06151815A
Cited
JPH06204170A
Cited
US5455197A
Cited
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