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Patent US5654235A successfully refreshed from Google Patents.
US5654235A
Expired / Lapsed
US
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Method of manufacturing contact structure using barrier metal
Assignee: Lapis Semiconductor Co Ltd
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Filing: 1995-06-22
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Granted: 1997-08-05
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Expires: 2015-06-22
Abstract
Abstract A titanium film is formed in a contact hole defined in a silicon substrate. The titanium film is transformed into a titanium silicide film and a first titanium nitride film by high-temperature lamp anneal. Further, a second titanium nitride film is stacked on the first titanium nitride film. Conditions are applied under which the titanium nitride films are formed into a granular crystal of primarily a (200) orientation. Therefore, barrier characteristics of the titanium nitride films to silicon atoms is not compromised even in the case of a subsequent high-temperature thermal treatment.
Inventors
- 👤 Ryoichi Matsumoto
- 👤 Yoshiyuki Kawazu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 20:02
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/40; H10W20/41; H10W20/425; Y; Y10; Y10S; Y10S257/00; Y10S257/915
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
134 words
A method of manufacturing a semiconductor device having an impurity diffusion layer formed on a silicon substrate and an ohmic contact including a metal interconnect, said ohmic contact being formed on the silicon substrate, said method comprising the steps of: defining a contact hole in an interlayer insulating film provided on the impurity diffusion layer; then forming a first titanium layer in the contact hole; then applying a thermal treatment by lamp anneal for transforming a surface on the titanium layer into a first titanium nitride layer and for orienting the first titanium nitride layer primarily in the form of a granular crystal with a (200) orientation; and then forming a second titanium nitride layer oriented primarily in the form of a granular crystal with a (200) orientation on the first titanium nitride layer.
Claim 2
Independent Claim
134 words
A method of manufacturing a semiconductor device having an impurity diffusion layer formed on a silicon substrate and an ohmic contact including a metal interconnect, said ohmic contact being formed on the silicon substrate, said method comprising the steps of: defining a contact hole in an interlayer insulating film provided on the impurity diffusion layer; then forming a first titanium layer in the contact hole; then applying a thermal treatment by lamp anneal for transforming a surface on the titanium layer into a first titanium nitride layer and for orienting the first titanium nitride layer primarily in the form of a granular crystal with a (200) orientation; and then forming a second titanium nitride layer oriented primarily in the form of a granular crystal with a (200) orientation on the first titanium nitride layer.
Claim 3
Dependent Claim
23 words
The method as claimed in claim 1, wherein the second titanium nitride layer has a thickness ranging from 30 nm to 100 nm.
Claim 4
Dependent Claim
16 words
The method as claimed in claim 1, wherein the metal interconnect is a refractory metal interconnected.
Claim 5
Dependent Claim
31 words
The method as claimed as claim 1, wherein the lamp anneal is carried out in an ambient of nitrogen or ammonia at a temperature ranging from 800° C. to 900° C.
Claim 6
Independent Claim
153 words
A method of manufacturing a semiconductor device having an impurity diffusion layer formed on a silicon substrate and an ohmic contact including a refractory metal interconnect, said ohmic contact being formed on the silicon substrate, said method comprising the steps of: defining a contact hole in an interlayer insulating film provided on the impurity diffusion layer; then forming a first titanium layer in the contact hole; then applying a first thermal treatment by lamp anneal for transforming a surface on the titanium layer into a first titanium nitride layer and for orienting the first titanium nitride layer primarily in the form of a granular crystal with a (200) orientation; then forming a second titanium nitride layer oriented primarily in the form of a granular crystal with a (200) orientation on the first titanium nitride layer; then forming the refractory metal interconnect on the second titanium nitride layer; and applying a second thermal treatment.
Claim 7
Independent Claim
153 words
A method of manufacturing a semiconductor device having an impurity diffusion layer formed on a silicon substrate and an ohmic contact including a refractory metal interconnect, said ohmic contact being formed on the silicon substrate, said method comprising the steps of: defining a contact hole in an interlayer insulating film provided on the impurity diffusion layer; then forming a first titanium layer in the contact hole; then applying a first thermal treatment by lamp anneal for transforming a surface on the titanium layer into a first titanium nitride layer and for orienting the first titanium nitride layer primarily in the form of a granular crystal with a (200) orientation; then forming a second titanium nitride layer oriented primarily in the form of a granular crystal with a (200) orientation on the first titanium nitride layer; then forming the refractory metal interconnect on the second titanium nitride layer; and applying a second thermal treatment.
Claim 8
Dependent Claim
24 words
The method as claimed in claim 5, wherein the second titanium nitride layer has a film thickness ranging from 30 nm to 100 nm.
Claim 9
Dependent Claim
16 words
The method as claimed in claim 5, wherein the refractory metal interconnect is a tungsten interconnect.
Claim 10
Dependent Claim
31 words
The method as claimed in claim 5, wherein the lamp anneal is carried out in an ambient of nitrogen or ammonia at a temperature ranging from 800° C. to 900° C.
Claim 11
Dependent Claim
24 words
The method as claimed in claim 5, wherein the second thermal treatment is performed at a temperature ranging from 850° C. to 950° C.
Claim 12
Independent Claim
130 words
A method of manufacturing a semiconductor device having an impurity diffusion layer formed on a silicon substrate and an ohmic contact including a metal interconnect, said ohmic contact being formed on the silicon substrate, said method comprising the steps of: defining a contact hole in an interlayer insulating film provided on the impurity diffusion layer; then forming a first refractory metal layer in the contact hole; then applying a thermal treatment by lamp anneal for transforming a surface on the refractory metal layer into a first refractory metal nitride layer and orienting the first refractory metal nitride layer primarily in the form of a granular crystal; and then forming a second refractory metal nitride layer primarily in the form of a granular crystal on the first refractory metal nitride layer.
Claim 13
Independent Claim
130 words
A method of manufacturing a semiconductor device having an impurity diffusion layer formed on a silicon substrate and an ohmic contact including a metal interconnect, said ohmic contact being formed on the silicon substrate, said method comprising the steps of: defining a contact hole in an interlayer insulating film provided on the impurity diffusion layer; then forming a first refractory metal layer in the contact hole; then applying a thermal treatment by lamp anneal for transforming a surface on the refractory metal layer into a first refractory metal nitride layer and orienting the first refractory metal nitride layer primarily in the form of a granular crystal; and then forming a second refractory metal nitride layer primarily in the form of a granular crystal on the first refractory metal nitride layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-08-04 | 2001-02-03 | 2001-08-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-08-04 | 2005-02-03 | 2005-08-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-08-04 | 2009-02-03 | 2009-08-05 | $7700.00 | Window Closed / Lapsed |