Control of the crystal orientation dependent properties of a film deposited on a semiconductor wafer

Claim 1

A method of providing a coating apparatus for controlling the crystal orientation dependent properties of a titanium nitride film on a semiconductor wafer, the method comprising the steps of: a) supporting a semiconductor wafer in a vacuum chamber with a surface thereof to be coated maintained in spaced parallel relationship with a surface of a titanium target; b) maintaining a mixture of inert gas and nitrogen gas at a vacuum pressure level within the chamber; c) producing, with a magnet positioned behind the target, a magnetic trap over the surface of the target and generating a magnetron enhanced plasma in the gas between the trap and the target; d) generating, with an auxiliary magnet positioned proximate the wafer, a counter-magnetic field; e) sputtering titanium from the target in the gas mixture; f) reacting the sputtered titanium with the nitrogen gas at the surface the wafer to form a titanium nitride film on the wafer; g) measuring the crystal orientation of the formed titanium nitride film on the surface of the wafer; h) adjusting, in response to the measuring step, the wafer-to-target spacing and the counter-magnetic field such that the ratio of <200> to <111> crystal orientation in the formed titanium nitride film over the surface of a wafer changes; i) repeating steps a) through g); j) repeating steps h) and i) until a given ratio of <200> to <111> crystal orientation of given uniformity is measured over the surface of the wafer, and thereby establishing a wafer-to-target spacing criteria and a magnet configuration criteria in accordance with the adjusting step; and k) providing a vacuum chamber having a target and wafer support spaced in accordance with the wafer-to-target spacing criteria and magnets Configured in accordance with the magnet configuration criteria.

Claim 2

A method of providing a coating apparatus for controlling the crystal orientation dependent properties of a titanium nitride film on a semiconductor wafer, the method comprising the steps of: a) supporting a semiconductor wafer in a vacuum chamber with a surface thereof to be coated maintained in spaced parallel relationship with a surface of a titanium target; b) maintaining a mixture of inert gas and nitrogen gas at a vacuum pressure level within the chamber; c) producing, with a magnet positioned behind the target, a magnetic trap over the surface of the target and generating a magnetron enhanced plasma in the gas between the trap and the target; d) generating, with an auxiliary magnet positioned proximate the wafer, a counter-magnetic field; e) sputtering titanium from the target in the gas mixture; f) reacting the sputtered titanium with the nitrogen gas at the surface the wafer to form a titanium nitride film on the wafer; g) measuring the crystal orientation of the formed titanium nitride film on the surface of the wafer; h) adjusting, in response to the measuring step, the wafer-to-target spacing and the counter-magnetic field such that the ratio of <200> to <111> crystal orientation in the formed titanium nitride film over the surface of a wafer changes; i) repeating steps a) through g); j) repeating steps h) and i) until a given ratio of <200> to <111> crystal orientation of given uniformity is measured over the surface of the wafer, and thereby establishing a wafer-to-target spacing criteria and a magnet configuration criteria in accordance with the adjusting step; and k) providing a vacuum chamber having a target and wafer support spaced in accordance with the wafer-to-target spacing criteria and magnets Configured in accordance with the magnet configuration criteria.

Claim 7

A method of manufacturing titanium nitride film coated semiconductor wafers comprising the steps of: providing a coating apparatus for controlling the crystal orientation dependent properties of a titanium nitride film on a semiconductor wafer, by; a) supporting a semiconductor wafer in a vacuum chamber with a surface thereof to be coated maintained in spaced parallel relationship with a surface of a titanium target; b) maintaining a mixture of inert gas and nitrogen gas at a vacuum pressure level within the chamber; c) producing, with a magnet positioned behind the target, a magnetic trap over the surface of the target and generating a magnetron enhanced plasma in the gas between the trap and the target; d) generating, with an auxiliary magnet positioned proximate the wafer, a counter-magnetic field; e) sputtering titanium from the target in the gas mixture; f) reacting the sputtered titanium with the nitrogen gas at the surface of the wafer to form a titanium nitride film on the wafer; g) measuring the crystal orientation of the formed titanium nitride film on the surface of the wafer; h) adjusting, in response to the measuring step, the wafer-to-target spacing and the counter-magnetic field such that the ratio of <200> to <111> crystal orientation in the formed titanium nitride film over the surface of a wafer changes; i) repeating steps a) through g); j) repeating steps h) and i) until a given ratio of <200> to <111> crystal orientation of given uniformity is measured over the surface of the wafer, and thereby establishing a wafer-to-target spacing criteria and a magnet configuration criteria in accordance with the adjusting step; and k) providing a vacuum chamber having a target and wafer support spaced in accordance with the wafer-to-target spacing criteria and magnets configured in accordance with the magnet configuration criteria; then: l) sequentially supporting a series of semiconductor wafers one-by-one in the vacuum chamber spaced in accordance with the wafer-to-target spacing criteria from a titanium target; then, for each wafer so supported: m) maintaining a mixture of inert gas and nitrogen gas at a vacuum pressure level within the chamber; n) producing, with the magnet positioned behind the target, a magnetic trap over the surface of the target and generating a magnetron enhanced plasma in the gas between the trap and the target; o) generating a counter-magnetic field with the auxiliary magnet having a configuration in accordance with the magnet configuration criteria and positioned proximate the wafer; and p) sputtering titanium from the target in the gas mixture; and q) reacting the sputtered titanium with the nitrogen gas at the surface of the wafer to form a titanium nitride film on the wafer in accordance with the given ratio of crystal orientation and given uniformity.

Claim 8

A method of manufacturing titanium nitride film coated semiconductor wafers comprising the steps of: providing a coating apparatus for controlling the crystal orientation dependent properties of a titanium nitride film on a semiconductor wafer, by; a) supporting a semiconductor wafer in a vacuum chamber with a surface thereof to be coated maintained in spaced parallel relationship with a surface of a titanium target; b) maintaining a mixture of inert gas and nitrogen gas at a vacuum pressure level within the chamber; c) producing, with a magnet positioned behind the target, a magnetic trap over the surface of the target and generating a magnetron enhanced plasma in the gas between the trap and the target; d) generating, with an auxiliary magnet positioned proximate the wafer, a counter-magnetic field; e) sputtering titanium from the target in the gas mixture; f) reacting the sputtered titanium with the nitrogen gas at the surface of the wafer to form a titanium nitride film on the wafer; g) measuring the crystal orientation of the formed titanium nitride film on the surface of the wafer; h) adjusting, in response to the measuring step, the wafer-to-target spacing and the counter-magnetic field such that the ratio of <200> to <111> crystal orientation in the formed titanium nitride film over the surface of a wafer changes; i) repeating steps a) through g); j) repeating steps h) and i) until a given ratio of <200> to <111> crystal orientation of given uniformity is measured over the surface of the wafer, and thereby establishing a wafer-to-target spacing criteria and a magnet configuration criteria in accordance with the adjusting step; and k) providing a vacuum chamber having a target and wafer support spaced in accordance with the wafer-to-target spacing criteria and magnets configured in accordance with the magnet configuration criteria; then: l) sequentially supporting a series of semiconductor wafers one-by-one in the vacuum chamber spaced in accordance with the wafer-to-target spacing criteria from a titanium target; then, for each wafer so supported: m) maintaining a mixture of inert gas and nitrogen gas at a vacuum pressure level within the chamber; n) producing, with the magnet positioned behind the target, a magnetic trap over the surface of the target and generating a magnetron enhanced plasma in the gas between the trap and the target; o) generating a counter-magnetic field with the auxiliary magnet having a configuration in accordance with the magnet configuration criteria and positioned proximate the wafer; and p) sputtering titanium from the target in the gas mixture; and q) reacting the sputtered titanium with the nitrogen gas at the surface of the wafer to form a titanium nitride film on the wafer in accordance with the given ratio of crystal orientation and given uniformity.

Claim 9

A method of providing a coating apparatus for controlling the crystal orientation dependent properties of a film during the vacuum deposition thereof onto a semiconductor wafer, the method comprising the steps of: a) supporting a semiconductor wafer in a vacuum chamber with a surface thereof to be coated maintained in spaced parallel relationship with a surface of a target; b) maintaining a gas at a vacuum pressure level within the chamber; c) producing, with a magnet positioned behind the target, a magnetic trap over the surface of the target and generating a magnetron enhanced plasma in the gas between the wafer and the target; d) generating, with an auxiliary magnet positioned proximate the wafer, a counter-magnetic field; e) sputtering from the target and onto the wafer material having a tendency to form a film of more than one crystal orientation as a function of deposition criteria; f) measuring the crystal orientation of the formed film on the surface of the wafer; g) adjusting, in response to the measuring step, the wafer-to-target spacing and the counter-magnetic field such that the crystal orientation in the formed film over the surface of a wafer changes; h) repeating steps a) through g); i) repeating steps g) and h) until a given crystal orientation of given uniformity is measured over the surface of the wafer, and thereby establishing a wafer-to-target spacing criteria and a magnet configuration criteria in accordance with the adjusting step; and j) providing a coating apparatus that includes a vacuum chamber having a target and wafer support spaced in accordance with the wafer-to-target spacing criteria and magnets configured in accordance with the magnet configuration criteria.

Claim 10

A method of providing a coating apparatus for controlling the crystal orientation dependent properties of a film during the vacuum deposition thereof onto a semiconductor wafer, the method comprising the steps of: a) supporting a semiconductor wafer in a vacuum chamber with a surface thereof to be coated maintained in spaced parallel relationship with a surface of a target; b) maintaining a gas at a vacuum pressure level within the chamber; c) producing, with a magnet positioned behind the target, a magnetic trap over the surface of the target and generating a magnetron enhanced plasma in the gas between the wafer and the target; d) generating, with an auxiliary magnet positioned proximate the wafer, a counter-magnetic field; e) sputtering from the target and onto the wafer material having a tendency to form a film of more than one crystal orientation as a function of deposition criteria; f) measuring the crystal orientation of the formed film on the surface of the wafer; g) adjusting, in response to the measuring step, the wafer-to-target spacing and the counter-magnetic field such that the crystal orientation in the formed film over the surface of a wafer changes; h) repeating steps a) through g); i) repeating steps g) and h) until a given crystal orientation of given uniformity is measured over the surface of the wafer, and thereby establishing a wafer-to-target spacing criteria and a magnet configuration criteria in accordance with the adjusting step; and j) providing a coating apparatus that includes a vacuum chamber having a target and wafer support spaced in accordance with the wafer-to-target spacing criteria and magnets configured in accordance with the magnet configuration criteria.

Claim 15

A method of manufacturing film coated semiconductor wafers comprising the steps of: providing a coating apparatus for controlling the crystal orientation dependent properties of a film on a semiconductor wafer, by: a) supporting a semiconductor wafer in a vacuum chamber with a surface thereof to be coated maintained in spaced parallel relationship with a surface of a target; b) maintaining a gas at a vacuum pressure level within the chamber; c) producing, with a magnet positioned behind the target, a magnetic trap over the surface of the target and generating a magnetron enhanced plasma in the gas between the wafer and the target; d) generating, with an auxiliary magnet positioned proximate the wafer, a counter-magnetic field; e) sputtering from the target and onto the wafer material having a tendency to form a film of more than one crystal orientation as a function of deposition criteria; f) measuring the crystal orientation of the formed film on the surface of the wafer; g) adjusting, in response to the measuring step, the wafer-to-target spacing and the counter-magnetic field such that the crystal orientation in the formed film over the surface of a wafer changes; h) repeating steps a) through g); i) repeating steps g) and h) until a given crystal orientation of given uniformity is measured over the surface of the wafer, and thereby establishing a wafer-to-target spacing criteria and a magnet configuration criteria in accordance with the adjusting step; and j) providing a coating apparatus that includes a vacuum chamber having a target and wafer support spaced in accordance with the wafer-to-target spacing criteria and magnets configured in accordance with the magnet configuration criteria; then: k) sequentially supporting a series of semiconductor wafers one-by-one in the vacuum chamber spaced in accordance with the wafer-to-target spacing criteria from a titanium target; then, for each wafer so supported: l) producing, with the magnet positioned behind the target, a magnetic trap over the surface of the target and generating a magnetron enhanced plasma in the gas between the trap and the target; m) generating a counter-magnetic field with the auxiliary magnet having a configuration in accordance with the magnet configuration criteria and positioned proximate the wafer; and n) sputtering material from the target and forming a film therewith on the surface of the wafer in accordance with the given crystal orientation and uniformity.

Claim 16

A method of manufacturing film coated semiconductor wafers comprising the steps of: providing a coating apparatus for controlling the crystal orientation dependent properties of a film on a semiconductor wafer, by: a) supporting a semiconductor wafer in a vacuum chamber with a surface thereof to be coated maintained in spaced parallel relationship with a surface of a target; b) maintaining a gas at a vacuum pressure level within the chamber; c) producing, with a magnet positioned behind the target, a magnetic trap over the surface of the target and generating a magnetron enhanced plasma in the gas between the wafer and the target; d) generating, with an auxiliary magnet positioned proximate the wafer, a counter-magnetic field; e) sputtering from the target and onto the wafer material having a tendency to form a film of more than one crystal orientation as a function of deposition criteria; f) measuring the crystal orientation of the formed film on the surface of the wafer; g) adjusting, in response to the measuring step, the wafer-to-target spacing and the counter-magnetic field such that the crystal orientation in the formed film over the surface of a wafer changes; h) repeating steps a) through g); i) repeating steps g) and h) until a given crystal orientation of given uniformity is measured over the surface of the wafer, and thereby establishing a wafer-to-target spacing criteria and a magnet configuration criteria in accordance with the adjusting step; and j) providing a coating apparatus that includes a vacuum chamber having a target and wafer support spaced in accordance with the wafer-to-target spacing criteria and magnets configured in accordance with the magnet configuration criteria; then: k) sequentially supporting a series of semiconductor wafers one-by-one in the vacuum chamber spaced in accordance with the wafer-to-target spacing criteria from a titanium target; then, for each wafer so supported: l) producing, with the magnet positioned behind the target, a magnetic trap over the surface of the target and generating a magnetron enhanced plasma in the gas between the trap and the target; m) generating a counter-magnetic field with the auxiliary magnet having a configuration in accordance with the magnet configuration criteria and positioned proximate the wafer; and n) sputtering material from the target and forming a film therewith on the surface of the wafer in accordance with the given crystal orientation and uniformity.

Claim 17

A method of manufacturing a coated semiconductor wafer with a thin film thereon having a given crystal orientation distributed over the surface thereof, the method comprising the steps of: providing a coating apparatus having means therein for supporting a semiconductor wafer in a vacuum chamber with a surface thereof to be coated maintained in spaced parallel relationship with a surface of a target in accordance with a wafer-to-target spacing criteria, a magnet positioned behind the target, configured to produce a magnetic trap over the surface of the target and generating a magnetron enhanced plasma in the gas between the trap and the target, and an auxiliary magnet positioned proximate the wafer and configured in accordance with magnet configuration criteria to produce a counter-magnetic field; the wafer-to-target spacing criteria and the magnet configuration criteria being established by: a) sputtering from the target and onto the wafer material having a tendency to form a film of more than one crystal orientation as a function of deposition criteria; b) measuring the crystal orientation of a film formed of the material on the surface of the wafer; c) adjusting, in response to the measuring step, the wafer-to-target spacing and the counter-magnetic field such that the crystal orientation in the formed film over the surface of a wafer changes; d) repeating steps a) through c); and e) repeating steps c) and d) until a given crystal orientation of a given uniformity is measured over the surface of the wafer, and thereby establishing the wafer-to-target spacing criteria and the magnet configuration criteria in accordance with the adjusting step; sequentially supporting a series of semiconductor wafers one-by-one in the vacuum chamber of the coating apparatus spaced in accordance with the wafer-to-target spacing criteria from a target therein; then, for each wafer so supported: f) producing, with the magnet positioned behind the target, a magnetic trap over the surface of the target and generating a magnetron enhanced plasma between the trap and the target; g) generating a counter-magnetic field with the auxiliary magnet having a configuration in accordance with the magnet configuration criteria and positioned proximate the wafer; and h) sputtering material from the target and forming a film therewith on the surface of the wafer.

Claim 18

A method of manufacturing a coated semiconductor wafer with a thin film thereon having a given crystal orientation distributed over the surface thereof, the method comprising the steps of: providing a coating apparatus having means therein for supporting a semiconductor wafer in a vacuum chamber with a surface thereof to be coated maintained in spaced parallel relationship with a surface of a target in accordance with a wafer-to-target spacing criteria, a magnet positioned behind the target, configured to produce a magnetic trap over the surface of the target and generating a magnetron enhanced plasma in the gas between the trap and the target, and an auxiliary magnet positioned proximate the wafer and configured in accordance with magnet configuration criteria to produce a counter-magnetic field; the wafer-to-target spacing criteria and the magnet configuration criteria being established by: a) sputtering from the target and onto the wafer material having a tendency to form a film of more than one crystal orientation as a function of deposition criteria; b) measuring the crystal orientation of a film formed of the material on the surface of the wafer; c) adjusting, in response to the measuring step, the wafer-to-target spacing and the counter-magnetic field such that the crystal orientation in the formed film over the surface of a wafer changes; d) repeating steps a) through c); and e) repeating steps c) and d) until a given crystal orientation of a given uniformity is measured over the surface of the wafer, and thereby establishing the wafer-to-target spacing criteria and the magnet configuration criteria in accordance with the adjusting step; sequentially supporting a series of semiconductor wafers one-by-one in the vacuum chamber of the coating apparatus spaced in accordance with the wafer-to-target spacing criteria from a target therein; then, for each wafer so supported: f) producing, with the magnet positioned behind the target, a magnetic trap over the surface of the target and generating a magnetron enhanced plasma between the trap and the target; g) generating a counter-magnetic field with the auxiliary magnet having a configuration in accordance with the magnet configuration criteria and positioned proximate the wafer; and h) sputtering material from the target and forming a film therewith on the surface of the wafer.