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US5080772A Expired / Lapsed US ⏱️ 0.0 years remaining

Method of improving ion flux distribution uniformity on a substrate

Assignee: Tokyo Electron Ltd
•
Filing: 1990-08-24
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Granted: 1992-01-14
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Expires: 2010-08-24
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Abstract

Abstract A bias sputter coating apparatus is provided with a cathode target assembly having a central electrode which is maintainable at an adjustable voltage level which is negative with respect to the chamber anode but positive with respect to the cathode voltage and the bias voltage on the substrate. The apparatus is used to manufacture sputter coated articles such as semiconductor wafers. The method provides that the voltage on the central electrode is adjusted to a level which improves the ion flux distribution uniformity on the substrate. The electrode voltage is generally optimized in the range of from -8 volts to -20 volts.

Inventors

  • 👤 Steven D. Hurwitt
  • 👤 Israel Wagner
  • 👤 Robert Hieronymi

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-06 09:27
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/22; C23C14/34; C23C14/3435; C23C14/345; C23C14/3407; C23C14/35; C23C14/54; C23C14/542

Claims Analysis

Total Claims: 25
Claim 1
Independent Claim 143 words
A method of improving the uniformity of the ion flux distribution onto a substrate in a bias sputter coating process performed in a vacuum processing chamber in which a target, having an outer rim, is maintained at a cathode potential, an anode is located at least in part outside of the outer rim of the target and maintained at an anode potential, and the substrate faces the target and is maintained at a bias potential, the method comprising the steps of: providing an electrode between the target and the substrate and remote from the outer rim of the target; maintaining the electrode at a potential which is independent of the anode and cathode potentials; and adjusting the potential of the electrode with respect to the anode and cathode potentials so as to improve the distribution uniformity of the ion flux onto the substrate.
Claim 2
Independent Claim 143 words
A method of improving the uniformity of the ion flux distribution onto a substrate in a bias sputter coating process performed in a vacuum processing chamber in which a target, having an outer rim, is maintained at a cathode potential, an anode is located at least in part outside of the outer rim of the target and maintained at an anode potential, and the substrate faces the target and is maintained at a bias potential, the method comprising the steps of: providing an electrode between the target and the substrate and remote from the outer rim of the target; maintaining the electrode at a potential which is independent of the anode and cathode potentials; and adjusting the potential of the electrode with respect to the anode and cathode potentials so as to improve the distribution uniformity of the ion flux onto the substrate.
Claim 3
Dependent Claim 65 words
The method of claim 1 further comprising the step of: measuring the ion flux distribution at the substrate; and selecting in response to the measured flux distribution, a potential for the electrode at which the uniformity of the ion flux distribution on the substrate will be improved; and the adjusting step includes the step of adjusting the potential of the electrode to the selected potential.
Claim 4
Dependent Claim 24 words
The method of claim 1 wherein: the electrode is provided at a position approximately on a line perpendicular to the center of the target.
Claim 5
Dependent Claim 19 words
The method of claim 1 wherein: the electrode is provided at a position near the surface of the target.
Claim 6
Dependent Claim 53 words
The method of claim 1 of improving the uniformity of the ion flux distribution onto the substrate where parameters of the process change, further comprising the step of: readjusting the potential of the electrode, following the change of parameters, so as to improve the distribution uniformity of the ion flux onto the substrate.
Claim 7
Dependent Claim 51 words
The method of claim 5 of improving the uniformity of the ion flux distribution onto the substrate where parameters of the process change over the life of the target, further comprising the step of: performing the electrode potential readjusting step following the use of the target in the sputter coating process.
Claim 8
Independent Claim 97 words
The method of claim of improving the distribution uniformity of the ion flux onto a substrate in a bias sputter coating process performed in a vacuum processing chamber in which a magnetic field is maintained over the target surface to trap electrons therein and to support a plasma over a region of the target surface from which sputtering is to occur, the magnetic field causing a distribution non-uniformity of the ion flux onto the substrate, and wherein: the potential of the electrode is adjusted so as to compensate for the distribution non-uniformity caused by the magnetic field.
Claim 9
Dependent Claim 29 words
The method of claim 1 wherein: the electrode is maintained at a negative potential of not more than approximately 20 volts with respect to the potential of the anode.
Claim 10
Independent Claim 173 words
A method of sputter coating a substrate in a bias sputter coating process performed in a vacuum processing chamber in which a target, having an outer rim, is maintained at a cathode potential, an anode is located at least in part outside the outer rim of the target and maintained at an anode potential, and the substrate faces the target and is maintained at a bias potential which is negative with respect to the anode potential to cause an ion flux to impinge upon the substrate during the performance of the coating process, the method comprising the steps of: providing an electrode between the target and the substrate and remote from the outer rim of the target; maintaining the electrode at a potential which is negative with respect to the anode potential and positive with respect to the anode potential and positive with respect to the anode potential and positive with respect to the cathode potential and the bias potential, whereby the uniformity of the ion flux distribution onto the substrate is improved.
Claim 11
Independent Claim 173 words
A method of sputter coating a substrate in a bias sputter coating process performed in a vacuum processing chamber in which a target, having an outer rim, is maintained at a cathode potential, an anode is located at least in part outside the outer rim of the target and maintained at an anode potential, and the substrate faces the target and is maintained at a bias potential which is negative with respect to the anode potential to cause an ion flux to impinge upon the substrate during the performance of the coating process, the method comprising the steps of: providing an electrode between the target and the substrate and remote from the outer rim of the target; maintaining the electrode at a potential which is negative with respect to the anode potential and positive with respect to the anode potential and positive with respect to the anode potential and positive with respect to the cathode potential and the bias potential, whereby the uniformity of the ion flux distribution onto the substrate is improved.
Claim 12
Dependent Claim 40 words
The method of claim 9 wherein: the electrode is maintained at a potential at which the uniformity of the distribution of the ion flux onto the substrate is more uniform than when the electrode is maintained at the anode potential.
Claim 13
Dependent Claim 30 words
The method of claim 9 further comprising the step of: adjusting the potential of the electrode so as to improve the distribution uniformity of the ion flux onto the substrate.
Claim 14
Dependent Claim 41 words
The method of claim 9 in which the target is annular and the region of the target from which sputtering occurs is annular and concentric with the target, wherein: the electrode is provided at a location approximately concentric with the target.
Claim 15
Dependent Claim 16 words
The method of claim 9 wherein: the electrode is provided near the surface of the target.
Claim 16
Dependent Claim 62 words
The method of claim 9 in which magnetic field is maintained over the target surface to trap electrons therein and to support a plasma over a region of the target surface, the magnetic field causing a distribution non-uniformity of the ion flux onto the substrate, and wherein: the potential of the electrode is selected so as to compensate for the distribution non-uniformity.
Claim 17
Dependent Claim 73 words
The method of claim 9 in which different target regions are maintained on a single piece target, each region having a magnetic field selectively maintained thereover to trap electrons therein and to support a plasma over the region of the target surface to cause sputtering from the region when the field is being maintained thereover, wherein: the potential of the electrode is changed in accordance with the selective maintenance of the magnetic fields.
Claim 18
Dependent Claim 46 words
The method of claim 15 in which the magnetic fields are switched to alternately maintain the fields over the different target regions, wherein: the potential of the electrode is alternately switched in synchronism with switching of the magnetic fields alternate selective maintenance of the magnetic fields.
Claim 19
Dependent Claim 43 words
The method of claim 16 in which the target is annular and the regions are annular and concentric with the center of the target, wherein: the electrode is provided at a position approximately on a line perpendicular to the center of the target.
Claim 20
Dependent Claim 29 words
The method of claim 9 wherein: the electrode is maintained at a negative potential of not more than approximately 20 volts with respect to the potential of the anode.
Claim 21
Dependent Claim 160 words
A sputter coating method of manufacturing coated substrate comprising the steps of: sputter coating a substrate in a bias sputter coating process performed in a vacuum processing chamber in which a target, having an outer rim, is maintained at a cathode potential and an anode is located at least in part outside the outer rim of the target and maintained at an anode potential with the substrate facing the target and maintained at a bias potential which is negative with respect to the anode potential to cause an ion flux to impinge upon the substrate during the performance of the coating process; providing an electrode between the target and the substrate and remote from the outer rim of the target; maintaining the electrode at a potential which is negative with respect to the anode potential and positive with respect to the cathode potential and the bias potential to thereby improve the uniformity of the ion flux distribution onto the substrate.
Claim 22
Dependent Claim 160 words
A sputter coating method of manufacturing coated substrate comprising the steps of: sputter coating a substrate in a bias sputter coating process performed in a vacuum processing chamber in which a target, having an outer rim, is maintained at a cathode potential and an anode is located at least in part outside the outer rim of the target and maintained at an anode potential with the substrate facing the target and maintained at a bias potential which is negative with respect to the anode potential to cause an ion flux to impinge upon the substrate during the performance of the coating process; providing an electrode between the target and the substrate and remote from the outer rim of the target; maintaining the electrode at a potential which is negative with respect to the anode potential and positive with respect to the cathode potential and the bias potential to thereby improve the uniformity of the ion flux distribution onto the substrate.
Claim 23
Dependent Claim 39 words
The method of claim 19 wherein: electrode is maintained at a potential at which the uniformity of the distribution of the ion flux onto the substrate is more uniform than when the electrode is maintained at the anode potential.
Claim 24
Dependent Claim 30 words
The method of claim 19 further comprising the step of: adjusting the potential of the electrode so as to improve the distribution uniformity of the ion flux onto the substrate.
Claim 25
Dependent Claim 41 words
The method of claim 19 in which the target is annular and the region of the target from which sputtering occurs is annular and concentric with the target, wherein: the electrode is provided at a location approximately concentric with the target.

References Cited (Backward Citations)

US4060470A Cited
US4100055A Cited
US4673480A Cited
US4427524A Cited
US4385979A Cited
US4547279A Cited
US4865712A Cited
US4629548A Cited
US4842703A Cited
US4810347A Cited
US4957605A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1995-01-13 1995-07-15 1996-01-14 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1999-01-13 1999-07-15 2000-01-14 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2003-01-13 2003-07-15 2004-01-14 $7700.00 Window Closed / Lapsed

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