US4865712A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Apparatus for manufacturing planarized aluminum films
Assignee: Novellus Systems Inc
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Filing: 1987-07-28
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Granted: 1989-09-12
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Expires: 2007-07-28
Abstract
Abstract An apparatus for planarizing an aluminum layer on a semiconductor wafer includes two deposition sources. The first source applies a refractory metal silicide layer to form a barrier to oxygen. The wafer is moved to a second deposition source which is an aluminum sputter device including a heater for the wafer, R.F. bias on the wafer and a magnetic mirror behind the wafer to move the plasma away from the wafer.
Inventors
- 👤 Donald M. Mintz
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 07:33
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/34; H01J37/3411; H01J37/345; H01J37/3458; C; C23; C23C; C23C14/00; C23C14/22; C23C14/54; H01J37/3402; H01J37/3405; H01J37/3408
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
116 words
An apparatus coating a semiconductor wafer, comprising: a vacuum chamber including support means for supporting a wafer in a positiion to be coated; magnetron sputter means for forming a thin layer by sputter deposition in a plasma onto the wafer in said support means, said magnetron sputter means including anode and planar cathode means for depositing a uniform coat on the semiconductor wafer facing the surface of the wafer to be coated and including first magnetic means for controlling a plasma generated between said anode and cathode means; second magnetic means positioned in juxtaposition to said support means for supporting a wafer for repelling said plasma from the surface of the wafer in said support means.
Claim 2
Independent Claim
116 words
An apparatus coating a semiconductor wafer, comprising: a vacuum chamber including support means for supporting a wafer in a positiion to be coated; magnetron sputter means for forming a thin layer by sputter deposition in a plasma onto the wafer in said support means, said magnetron sputter means including anode and planar cathode means for depositing a uniform coat on the semiconductor wafer facing the surface of the wafer to be coated and including first magnetic means for controlling a plasma generated between said anode and cathode means; second magnetic means positioned in juxtaposition to said support means for supporting a wafer for repelling said plasma from the surface of the wafer in said support means.
Claim 3
Dependent Claim
64 words
The apparatus of claim 1 wherein said magnetron sputter means including first magnetic means includes means for generating a magnetic field of a first polarity for controlling said plasma and wherein said second magnetic means generates a magnetic field of a second polarity, said second polarity being opposite said first polarity in order to repel said plasma from the wafer in said support means.
Claim 4
Dependent Claim
15 words
The apparatus of claim 2 including means for providing an R.F. bias to the wafer.
Claim 5
Dependent Claim
15 words
The apparatus of claim 1 including means for heating the wafer from behind while sputtering.
Claim 6
Dependent Claim
22 words
The apparatus of claim 1 in which said second magnetic means comprises a solenoid coil behind the wafer in said support means.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-09-11 | 1993-03-13 | 1993-09-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-09-11 | 1997-03-13 | 1997-09-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-09-11 | 2001-03-13 | 2001-09-12 | $7700.00 | Window Closed / Lapsed |