US3755123A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for sputtering a film on an irregular surface
Assignee: —
•
Filing: 1971-03-30
•
Granted: 1973-08-28
•
Expires: 1991-03-30
Abstract
Abstract A film of substantially uniform thickness is sputtered on an irregular surface of a substrate by inducting a negative voltage on the surface of the film as it is deposited. Controlling the negative voltage results in deposition of a dielectric film that has good edge coverage properties.
Inventors
No inventors recorded.
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 11:46
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/22; C23C14/34; C23C14/35
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
14 words
The method according to claim 1 in which the substrate is an integrated circuit.
Claim 2
Dependent Claim
13 words
The method according to claim 1 in which the film is silicon nitride.
Claim 3
Dependent Claim
13 words
The method according to claim 1 in which the film is aluminum oxide.
Claim 4
Dependent Claim
13 words
The method according to claim 1 in which the filM is silicon dioxide.
Claim 5
Independent Claim
183 words
A method for RF sputter depositing a dielectric film on a substrate over a metallic line on the substrate surface in elevated relief forming an irregular top surface, the film to provide edge protection over the line of at least 50 percent, the method comprising: disposing the substrates within a partially evacuated chamber having an inert gas therein; applying a high frequency alternating voltage between a dielectric target within the chamber and the substrate to cause the material from the target to be sputter deposited onto the irregular surface of the substrate; inducing a negative DC voltage of at least 60 volts on the surface of the dielectric film as it is deposited, said negative DC voltage induced by applying a magnetic field substantially perpendicular to the plane of the holder for the substrate, the negative voltage on the surface of the film is induced by controlling the pressure of the inert gas within the chamber in cooperation with the strength of the magnetic field and the power input, the relationship between power input, magnetic field, and pressure in accordance with the expression
Claim 6
Dependent Claim
13 words
The method according to claim 6 in which the film is silicon dioxide.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-08-27 | 1977-02-26 | 1977-08-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-08-27 | 1981-02-26 | 1981-08-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-08-27 | 1985-02-26 | 1985-08-28 | $7700.00 | Window Closed / Lapsed |