US4547279A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Sputtering apparatus
Assignee: Hitachi Ltd
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Filing: 1984-11-21
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Granted: 1985-10-15
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Expires: 2004-11-21
Abstract
Abstract A magnetron type sputter apparatus utilizing an orthogonal electromagnetic field, with the apparatus being adapted for forming an electrode wiring of a semiconductor device. The apparatus includes a target having a shape adapted to prevent a bumping of a target material from an end part of the target so that a temperature rise and damage of the semiconductor device attributed to electron bombardment can be prevented and the lifetime of the target can be prolonged.
Inventors
- 👤 Hideharu Kiyota
- 👤 Mitsuaki Horiuchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 00:31
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/34; H01J37/3411; H01J37/3414; H01J37/3423; H10; H10P; H10P14/00; H10P14/40; H10P14/42; H01J37/3402; H01J37/3405; H01J37/3408
Claims Analysis
Total Claims: 36
Claim 1
Independent Claim
57 words
A sputtering apparatus comprising an anode, a target means arranged in opposition to said anode which is biased as a cathode, means for generating a magnetic field, and a shield disposed in proximity to said target means, said target means including a substantially flat surface at an outer marginal area thereof in proximity to said shield ring.
Claim 2
Dependent Claim
57 words
A sputtering apparatus comprising an anode, a target means arranged in opposition to said anode which is biased as a cathode, means for generating a magnetic field, and a shield disposed in proximity to said target means, said target means including a substantially flat surface at an outer marginal area thereof in proximity to said shield ring.
Claim 3
Dependent Claim
43 words
A sputtering apparatus according to claim 1, wherein said means for generating a magnetic field and said shield is arranged around said target means, wherein said substantially flat surface is formed at an edge of an outer peripheral portion of said traget means.
Claim 4
Dependent Claim
38 words
A sputtering apparatus according to claim 1, wherein said target means is formed by an annular member and has a substantially right-angle triangular cross-sectional configuration, with an upper end part of the triangle forming the substantially flat surface.
Claim 5
Dependent Claim
106 words
A sputtering apparatus comprising: an anode to which is applied a positive potential for producing an electric field having a component normal to a target; a cathode in opposition to said anode to which is applied a negative potential which functions as the target ions to be sputtered, said target having an outer peripheral portion which is flat and which defines a non-vertically disposed outside periphery; means disposed around the outside periphery of said target for producing a magnetic field which functions to confine electrons emitted between the anode and the target; and a shield interposed in a space disposed between the magnets and the target.
Claim 6
Dependent Claim
106 words
A sputtering apparatus comprising: an anode to which is applied a positive potential for producing an electric field having a component normal to a target; a cathode in opposition to said anode to which is applied a negative potential which functions as the target ions to be sputtered, said target having an outer peripheral portion which is flat and which defines a non-vertically disposed outside periphery; means disposed around the outside periphery of said target for producing a magnetic field which functions to confine electrons emitted between the anode and the target; and a shield interposed in a space disposed between the magnets and the target.
Claim 7
Dependent Claim
94 words
A sputtering apparatus in accordance with claim 1, wherein said target is an annular member and has a cross-sectional configuration having a first inclined section, a first horizontally disposed section having a first end joined to the first inclined section and a second end, a second inclined section having a first end joined to the second end of the first horizontally disposed section and a second end and a second horizontally disposed section joined to the second end of the second inclined section, said second horizontally disposed section being said flat outer peripheral portion.
Claim 8
Dependent Claim
107 words
A sputtering apparatus comprising: an anode to which is applied a positive potential for producing an electrical field having a component normal to a target; a cathode to which is applied a negative potential which functions as the target to be sputtered, said target being conical, disposed around said anode and, having an interior portion which is substantially flat and a peripheral portion which defines a substantially flat non-vertically disposed surface; means for producing a magnetic field disposed in proximity to said target which functions to confine electrons emitted between the anode and the target; and a shield means facing said substantially flat non-vertically disposed surface means.
Claim 9
Dependent Claim
107 words
A sputtering apparatus comprising: an anode to which is applied a positive potential for producing an electrical field having a component normal to a target; a cathode to which is applied a negative potential which functions as the target to be sputtered, said target being conical, disposed around said anode and, having an interior portion which is substantially flat and a peripheral portion which defines a substantially flat non-vertically disposed surface; means for producing a magnetic field disposed in proximity to said target which functions to confine electrons emitted between the anode and the target; and a shield means facing said substantially flat non-vertically disposed surface means.
Claim 10
Independent Claim
101 words
A method for depositing atoms sputtered from a target, onto one or more semiconductor wafers in which the occurrence of an electrical discharge between the peripheral portion of the target and a shield is minimized comprising: providing the peripheral portion of the target with a substantially flat surface which lessens the concentration of an electrical field between the peripheral portion of the target and the shield during sputtering; and depositing the atoms sputtered from the target onto one or more of the semiconductor wafers whereby the depositing of an undesired concentration of atoms on the one or more wafers is minimized.
Claim 11
Independent Claim
101 words
A method for depositing atoms sputtered from a target, onto one or more semiconductor wafers in which the occurrence of an electrical discharge between the peripheral portion of the target and a shield is minimized comprising: providing the peripheral portion of the target with a substantially flat surface which lessens the concentration of an electrical field between the peripheral portion of the target and the shield during sputtering; and depositing the atoms sputtered from the target onto one or more of the semiconductor wafers whereby the depositing of an undesired concentration of atoms on the one or more wafers is minimized.
Claim 12
Dependent Claim
10 words
The method of claim 7 wherein said target is conical.
Claim 13
Dependent Claim
10 words
The method of claim 7 wherein said target is flat.
Claim 14
Dependent Claim
107 words
A sputtering apparatus comprising: an anode to which is applied a positive potential for producing an electrical field having a component normal to a target; a planar cathode opposed to said anode to which is applied a negative potential which functions as a target to be sputtered, said target having an interior portion which is substantially flat and a peripheral portion which is chamfered with respect to the horizontal to define a substantially flat peripheral surface; means disposed in proximity to said target for producing a magnetic field which functions to confine electrons emitted between the anode and the target; and a shield facing the peripheral surface.
Claim 15
Dependent Claim
107 words
A sputtering apparatus comprising: an anode to which is applied a positive potential for producing an electrical field having a component normal to a target; a planar cathode opposed to said anode to which is applied a negative potential which functions as a target to be sputtered, said target having an interior portion which is substantially flat and a peripheral portion which is chamfered with respect to the horizontal to define a substantially flat peripheral surface; means disposed in proximity to said target for producing a magnetic field which functions to confine electrons emitted between the anode and the target; and a shield facing the peripheral surface.
Claim 16
Dependent Claim
46 words
A target for sputtering having a target surface and a flat peripheral surface inclined at an obtuse angle measured within the target with respect to the target surface of the target, the peripheral surface being adjacent to a shield ring when the target is in use.
Claim 17
Dependent Claim
46 words
A target for sputtering having a target surface and a flat peripheral surface inclined at an obtuse angle measured within the target with respect to the target surface of the target, the peripheral surface being adjacent to a shield ring when the target is in use.
Claim 18
Dependent Claim
36 words
A target according to claim 11, wherein the target is annular and has at least one inner surface inclined to the longitudnal axis of the target, the at least one inner surface being the target surface.
Claim 19
Dependent Claim
20 words
A target according to claim 12, wherein the peripheral surface is substantially perpendicular to the longitudinal axis of the target.
Claim 20
Dependent Claim
23 words
A target according to claim 12, wherein the peripheral surface is between the target surface and a cylindrical outer surface of the target.
Claim 21
Dependent Claim
23 words
A target according to claim 13, wherein the peripheral surface is between the target surface and a cylindrical outer surface of the target.
Claim 22
Dependent Claim
37 words
A target according to claim 11 wherein the target is planar, the target surface is a planar surface of the target, and the peripheral surface is between the target surface and a side surface of the target.
Claim 23
Dependent Claim
112 words
A sputtering process, comprising applying a voltage between an anode and a target forming a cathode, thereby to generate a glow discharge of free ions, and guiding the free ions onto the target by a means for producing a magnetic field, thereby to generate free atoms, the free atoms travelling to a substrate, wherein there is a shield ring between the means for producing a magnetic field and the target, and the target has a target surface and a flat peripheral surface inclined at an obtuse angle measured within the target with respect to the target surface, the peripheral surface being adjacent to the shield ring when the target is in use.
Claim 24
Dependent Claim
112 words
A sputtering process, comprising applying a voltage between an anode and a target forming a cathode, thereby to generate a glow discharge of free ions, and guiding the free ions onto the target by a means for producing a magnetic field, thereby to generate free atoms, the free atoms travelling to a substrate, wherein there is a shield ring between the means for producing a magnetic field and the target, and the target has a target surface and a flat peripheral surface inclined at an obtuse angle measured within the target with respect to the target surface, the peripheral surface being adjacent to the shield ring when the target is in use.
Claim 25
Dependent Claim
38 words
A sputtering process in accordance with claim 17 wherein the target is annular and has at least one inner surface inclined to the longitudinal axis of the target, the at least one inner surface being the target surface.
Claim 26
Dependent Claim
21 words
A process in accordance with claim 12 wherein the peripheral surface is substantially perpendicular to the longitudinal axis of the target.
Claim 27
Dependent Claim
25 words
A sputtering process in accordance with claim 18 wherein the peripheral surface is between the target surface and a cylindrical outer surface of the target.
Claim 28
Dependent Claim
25 words
A sputtering process in accordance with claim 19 wherein the peripheral surface is between the target surface and a cylindrical outer surface of the target.
Claim 29
Dependent Claim
39 words
A sputtering process in accordance with claim 17 wherein the target is planar, the target surface is a planar surface of the target and the peripheral surface is between the target surface and a side surface of the target.
Claim 30
Dependent Claim
86 words
A sputtering apparatus having: a target for sputtering having a target surface and a flat peripheral surface inclined at an obtuse angle measured within the target with respect to the target surface of the target, the peripheral surface being adjacent to a shield ring when the target is in use, said target forming a cathode; an anode in opposition to the cathode; and a magnet and a shield ring located near the target such that the shield ring is adjacent the peripheral surface of the target.
Claim 31
Dependent Claim
86 words
A sputtering apparatus having: a target for sputtering having a target surface and a flat peripheral surface inclined at an obtuse angle measured within the target with respect to the target surface of the target, the peripheral surface being adjacent to a shield ring when the target is in use, said target forming a cathode; an anode in opposition to the cathode; and a magnet and a shield ring located near the target such that the shield ring is adjacent the peripheral surface of the target.
Claim 32
Dependent Claim
38 words
A sputtering apparatus in accordance with claim 23 wherein the target is annular and has at least one inner surface inclined to the longitudinal axis of the target, the at least one inner surface being the target surface.
Claim 33
Dependent Claim
22 words
A sputtering apparatus in accordance with claim 24 wherein the peripheral surface is substantially perpendicular to the longitudinal axis of the target.
Claim 34
Dependent Claim
25 words
A sputtering apparatus in accordance with claim 24 wherein the peripheral surface is between the target surface and a cylindrical outer surface of the target.
Claim 35
Dependent Claim
25 words
A sputtering apparatus in accordance with claim 25 wherein the peripheral surface is between the target surface and a cylindrical outer surface of the target.
Claim 36
Dependent Claim
39 words
A sputtering apparatus in accordance with claim 23 wherein the target is planar, the target surface is a planar surface of the target and the peripheral surface is between the target surface and a side surface of the target.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-10-14 | 1989-04-15 | 1989-10-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-10-14 | 1993-04-15 | 1993-10-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-10-14 | 1997-04-15 | 1997-10-15 | $7700.00 | Window Closed / Lapsed |