Abstract A thin film forming method and apparatus, wherein a negative voltage is applied alternately to a target and a substrate to perform film formation and reverse sputter alternately. Further, a coil is mounted between the target and the substrate and a high frequency current is made to flow therethrough to generate plasma. A negative base voltage smaller in absolute value than that during sputter may be applied to the substrate to make Ar ions flow into the substrate while it is subjected to reverse sputter. Thus, a film whose step coverage is 0.3 or more is possible. It becomes also possible to maintain a stable discharge and perform reverse sputter in a high vacuum region. The pressure of an Ar atmosphere may be lowered to 10 -3 Torr or less. An aluminum wiring film whose peak value of x-ray diffraction strength at a (111) plane is 150 Kcps or more is possible. Also, a barrier layer having a layered structure of granular and columnar crystals or a mixed structure thereof providing an efficient barrier effect and a large specific resistance is possible.
An integrated circuit device having a barrier layer which is interposed between an aluminum wiring film and a semiconductor substrate of an integrated circuit, said barrier layer having a layered structure of alternating sublayers of granular and columnar crystals.
Claim 2
Dependent Claim
39 words
An integrated circuit device having a barrier layer which is interposed between an aluminum wiring film and a semiconductor substrate of an integrated circuit, said barrier layer having a layered structure of alternating sublayers of granular and columnar crystals.
Claim 3
Dependent Claim
36 words
An integrated circuit device according to claim 1, wherein a peak value of an x-ray diffraction strength of said aluminum wiring film at a (111) plane of said aluminum wiring film is 150 Kcps or more.
Claim 4
Dependent Claim
15 words
An integrated circuit device according to claim 1, wherein said barrier is made of TiN.
Claim 5
Dependent Claim
31 words
An aluminum wiring film formed on a substrate wherein a peak value of an x-ray diffraction strength at a (111) plane of said aluminum wiring film is 150 Kcps or more.
Claim 6
Dependent Claim
31 words
An aluminum wiring film formed on a substrate wherein a peak value of an x-ray diffraction strength at a (111) plane of said aluminum wiring film is 150 Kcps or more.
Claim 7
Dependent Claim
32 words
An article comprising one of a sputtered film and a vapor-deposited film, the film being formed on a substrate such that the film has a layered structure of granular and columnar crystals.
Claim 8
Dependent Claim
32 words
An article comprising one of a sputtered film and a vapor-deposited film, the film being formed on a substrate such that the film has a layered structure of granular and columnar crystals.