Method and apparatus for improving the uniformity ion bombardment in a magnetron sputtering system

Claim 2

A sputtering method for imparting a uniform secondary ion flux distribution upon a substrate, comprising the steps of: providing a cathode assembly including a cathode target of coating material and cathode magnet means, in opposed, spaced relation with a substrate to be coated; inducing a cathode magnetic field with said cathode magnet means, said cathode field including a fringing field portion in the vicinity of said substrate, said fringing field having one or more regions near the substrate where its magnetic field lines have components perpendicular to the surface of the substrate; creating a primary ion flux and a secondary ion flux, both originating from within said cathode magnetic field in the space between said fringing portion and said cathode target; bombarding said cathode target with said primary ion flux, to eject portions of coating material; impacting said substrate with said secondary ion flux; and generating a countermagnetic field, in the vicinity of said substrate, having magnetic field components in a direction perpendicular to the substrate which are located so as to oppose the components of the cathode magnetic field perpendicular to the substrate in each of said one or more regions.

Claim 3

The method of claim 1, wherein said generating step generates a countermagnet field wherein said perpendicular components of field lines of said countermagnetic field in the vicinity of said substrate have substantially opposing direction and substantially equal magnitude to components of said cathode magnetic field perpendicular to said substrate in said substrate surface vicinity.

Claim 4

The method of claim 1, wherein said generating step generates a countermagnetic field which opposes said cathode magnetic field in the vicinity of said substrate such that the magnetic field lines assume a substantially flat shape near said substrate surface.

Claim 5

The method of claim 1 wherein the generating of said countermagnetic field is by means of countermagnet means chosen to make the ion current uniform across the substrate.

Claim 6

The method of claim 1 wherein said countermagnetic means is chosen by replication of the cathode magnet means optimized in size and location in response to measurements of ion current.

Claim 7

The method of claim 1 wherein the generating of said countermagnetic field is by means of countermagnet means chosen in response to measurement of ion current across said substrate.

Claim 8

A sputtering method for impacting a uniform ion flux upon a substrate, said method comprising the steps of: providing a cathode assembly including cathode magnet means; disposing a substrate having a surface in spaced relationship with and facing said cathode assembly; inducing a primary magnetic field closely adjacent to said cathode assembly with said cathode magnet means, said primary field including a fringe field portion extending to the vicinity of said substrate and including components perpendicular to the surface of said substrate near at least one inner portion thereof; impacting said substrate with an ion flux; disposing a countermagnet means adjacent to said substrate; and making said ion flux uniform across said substrate by generating a secondary magnetic field by means of said countermagnet means, said secondary field including field lines having components extending substantially perpendicular to the surface of said substrate at each said inner portion and in a direction opposite to the components of said primary magnetic field perpendicular to the substrate to substantially flatten the magnetic field in the vicinity of said surface substantially parallel thereto such that said ion flux is substantially uniform.

Claim 9

A sputtering method for impacting a uniform ion flux upon a substrate, said method comprising the steps of: providing a cathode assembly including cathode magnet means; disposing a substrate having a surface in spaced relationship with and facing said cathode assembly; inducing a primary magnetic field closely adjacent to said cathode assembly with said cathode magnet means, said primary field including a fringe field portion extending to the vicinity of said substrate and including components perpendicular to the surface of said substrate near at least one inner portion thereof; impacting said substrate with an ion flux; disposing a countermagnet means adjacent to said substrate; and making said ion flux uniform across said substrate by generating a secondary magnetic field by means of said countermagnet means, said secondary field including field lines having components extending substantially perpendicular to the surface of said substrate at each said inner portion and in a direction opposite to the components of said primary magnetic field perpendicular to the substrate to substantially flatten the magnetic field in the vicinity of said surface substantially parallel thereto such that said ion flux is substantially uniform.

Claim 10

The method of claim 7 wherein said generating step generates a countermagnetic field wherein said components of said field lines of said secondary field at each said inner portion of said substrate are of substantially equal magnitude to said components of said primary magnetic field perpendicular to said substrate in said substrate vicinity.

Claim 11

Apparatus for sputter coating a substrate, said apparatus comprising: a cathode assembly including a target composed of coating material and cathode magnet means for producing a primary magnetic field closely adjacent said target to enhance ion bombardment of said target with a primary ion flux, said primary magnetic field including a fringe field extending adjacent to said substrate and having a component substantially perpendicular to said surface of the substrate at at least one interior portion of said substrate; means for creating said primary ion flux and a secondary ion flux originating from within said primary magnetic field between said fringe field and said target; means for mounting said substrate spaced apart from and facing said cathode target; means including negative biasing means for impacting said secondary ion flux onto said substrate; and means for uniformly impacting said substrate with said secondary ion flux, including countermagnet means for producing a secondary magnetic field in the vicinity of said substrate, said secondary magnetic field having components perpendicular to the surface of said substrate, said components being substantially equal in magnitude and opposite in direction to said perpendicular components of said component of said fringe field at each portion of said substrate.

Claim 12

Apparatus for sputter coating a substrate, said apparatus comprising: a cathode assembly including a target composed of coating material and cathode magnet means for producing a primary magnetic field closely adjacent said target to enhance ion bombardment of said target with a primary ion flux, said primary magnetic field including a fringe field extending adjacent to said substrate and having a component substantially perpendicular to said surface of the substrate at at least one interior portion of said substrate; means for creating said primary ion flux and a secondary ion flux originating from within said primary magnetic field between said fringe field and said target; means for mounting said substrate spaced apart from and facing said cathode target; means including negative biasing means for impacting said secondary ion flux onto said substrate; and means for uniformly impacting said substrate with said secondary ion flux, including countermagnet means for producing a secondary magnetic field in the vicinity of said substrate, said secondary magnetic field having components perpendicular to the surface of said substrate, said components being substantially equal in magnitude and opposite in direction to said perpendicular components of said component of said fringe field at each portion of said substrate.

Claim 13

The apparatus of claim 9 wherein said countermagnet means is positioned adjacent said substrate opposite said cathode assembly.

Claim 14

The apparatus of claim 9 or 10 wherein said countermagnet means comprises pole pieces configures in general replication of said cathode magnet means.

Claim 15

The apparatus of claim 9 or 10 wherein said cathode magnet means includes pole pieces, and wherein said countermagnet mean includes pole pieces aligned in the same orientation as the pole pieces of the cathode magnet means.

Claim 16

The apparatus of claim 9 or 10 wherein said countermagnet means includes pole pieces for shaping said countermagnet field.

Claim 17

The apparatus of claim 9 or 10 further comprising a chamber containing said cathode assembly, and wherein said countermagnet is located outside said chamber.

Claim 18

The apparatus of claim 9 wherein said countermagnet means comprises magnetic pole means for making uniform said secondary ion flux upon the surface of said substrate.

Claim 19

The apparatus of claim 15 wherein said pole pieces are of a size and location selected to make the ion flux across said substrate uniform.

Claim 20

The apparatus of claim 15 or 16 wherein said countermagnet is positioned on the side of said substrate opposite the position of said cathode assembly.

Claim 21

The apparatus of claim 15 or claim 16 further comprising a chamber containing said cathode assembly wherein said countermagnet is located outside said chamber.

Claim 22

Apparatus for sputter coating a substrate, said apparatus comprising: a cathode assembly including target means composed of coating material and a cathode magnet means for producing a primary magnetic field closely adjacent said target means to enhance bombardment of said target means with a primary ion flux; means mounting said substrate spaced apart from and facing said cathode target means; means for directing a secondary ion flux bombardment upon said substrate; means for making said secondary ion flux upon said substrate uniform across its surface, said means including means for producing a secondary magnetic field in the vicinity of said substrate, and said countermagnet means having pole pieces of a number, size and spacing so selected to replicate the pole piece number, size and spacing of said cathode magnet means.

Claim 23

Apparatus for sputter coating a substrate, said apparatus comprising: a cathode assembly including target means composed of coating material and a cathode magnet means for producing a primary magnetic field closely adjacent said target means to enhance bombardment of said target means with a primary ion flux; means mounting said substrate spaced apart from and facing said cathode target means; means for directing a secondary ion flux bombardment upon said substrate; means for making said secondary ion flux upon said substrate uniform across its surface, said means including means for producing a secondary magnetic field in the vicinity of said substrate, and said countermagnet means having pole pieces of a number, size and spacing so selected to replicate the pole piece number, size and spacing of said cathode magnet means.

Claim 24

The apparatus of claim 19 wherein said means for making said secondary ion flux uniform includes countermagnet means for producing a secondary magnetic field in the vicinity of said substrate.

Claim 25

The apparatus of claim 20 wherein said countermagnet means has pole pieces of size and location so selected to render ion current measurements across said substrate substantially uniform.

Claim 26

The apparatus of claim 20 wherein said countermagnet means is a replication of said cathode magnet means varied in size and shape to render ion current measurements across said substrate substantially uniform.

Claim 28

The apparatus of claim 23 wherein said countermagnet is positioned on the side of said substrate opposite the position of the cathode assembly.

Claim 29

The apparatus of claim 23 wherein said countermagnet includes pole pieces for shaping said countermagnet field.

Claim 30

The apparatus of claim 23 further comprising a chamber containing the cathode assembly wherein said countermagnet is located outside said chamber.

Claim 31

Apparatus for sputter etching a substrate having a surface to be etched, said apparatus comprising: a cathode assembly including magnet means for producing a primary magnetic field closely adjacent said cathode assembly, said primary magnetic field including a fringe field extending adjacent to said substrate and having a component perpendicular to said surface and greater near an inner portion thereof; means for creating an etching ion flux to bombard and etch said substrate, and countermagnet means for inducing a secondary field in the vicinity of said substrate, said secondary countermagnetic field having a component perpendicular to the surface of said substrate which is opposite direction of said perpendicular component of said primary magnetic field.

Claim 32

Apparatus for sputter etching a substrate having a surface to be etched, said apparatus comprising: a cathode assembly including magnet means for producing a primary magnetic field closely adjacent said cathode assembly, said primary magnetic field including a fringe field extending adjacent to said substrate and having a component perpendicular to said surface and greater near an inner portion thereof; means for creating an etching ion flux to bombard and etch said substrate, and countermagnet means for inducing a secondary field in the vicinity of said substrate, said secondary countermagnetic field having a component perpendicular to the surface of said substrate which is opposite direction of said perpendicular component of said primary magnetic field.

Claim 33

The apparatus of claim 27 wherein said component of said countermagnetic field is substantially equal in magnitude to said perpendicular component of said primary magnetic field in the vicinity of said etching surface, whereby the primary magnetic field in the vicinity of said substrate assumes a substantially flat shape with the magnetic field lines extending substantially parallel to said surface.

Claim 34

Apparatus for sputtering coating a substrate, said apparatus comprising: a cathode assembly including target means composed of coating material and a cathode magnet means for producing a primary magnetic field closely adjacent said target means to enhance ion bombardment of said target means, said primary magnetic field including fringe field lines extending adjacent to said substrate and having a component substantially perpendicular to said surface of the substrate, said fringe field lines tending to form a generally funnel shaped central boundary region; a means mounting said substrate spaced apart from and facing said cathode target means; and countermagnet means for producing a secondary magnetic field in the vicinity of said substrate, said secondary magnetic field having field lines with components perpendicular to the surface of said substrate, said perpendicular components being substantially opposite in direction to said perpendicular components of said primary magnetic fringe field lines and of such magnitude that the magnetic field in the vicinity of said substrate is substantially flattened in the vicinity of said surface and said funnel shaped central boundary region is substantially reduced in size.

Claim 35

Apparatus for sputtering coating a substrate, said apparatus comprising: a cathode assembly including target means composed of coating material and a cathode magnet means for producing a primary magnetic field closely adjacent said target means to enhance ion bombardment of said target means, said primary magnetic field including fringe field lines extending adjacent to said substrate and having a component substantially perpendicular to said surface of the substrate, said fringe field lines tending to form a generally funnel shaped central boundary region; a means mounting said substrate spaced apart from and facing said cathode target means; and countermagnet means for producing a secondary magnetic field in the vicinity of said substrate, said secondary magnetic field having field lines with components perpendicular to the surface of said substrate, said perpendicular components being substantially opposite in direction to said perpendicular components of said primary magnetic fringe field lines and of such magnitude that the magnetic field in the vicinity of said substrate is substantially flattened in the vicinity of said surface and said funnel shaped central boundary region is substantially reduced in size.

Claim 36

The apparatus of claim 29 wherein the magnitude of said perpendicular components of said secondary magnetic field are substantially equal in magnitude to said components of said primary magnetic firnge field lines.