Shock-resistant semiconductor device and method for producing same

Claim 1

A method of producing a stacked semiconductor device having a laminated structure, comprising the steps of: forming plural semiconductor sub-units by forming a metallic bump on a lower surface of each of plural semiconductor devices, coating a pad portion on an upper surface of each of plural substrates, the pad portions and metallic bumps being positioned so as to allow contact-alignment between corresponding ones of the plural semiconductor devices and the plural substrates, and utilizing a flip-chip method, joining the corresponding plural semiconductor devices and plural substrates to form the plural semiconductor sub-units; for each of the plural semiconductor sub-units, injecting a sealing resin into a connecting region defined between the upper surface of each of the substrates and the lower surface of the joined semiconductor device so as to seal the connecting region of each semiconductor sub-unit; providing on the upper surface of the substrates of some of the semiconductor sub-units, in a region apart from the connecting region, a sub-unit connecting bump; vertically stacking the plural semiconductor sub-units on-upon-another so that a second semiconductor unit is stacked atop a first semiconductor unit and so that the connecting bump of the first semiconductor sub-unit is joined to a lower surface of the second semiconductor sub-unit; electrically connecting the first stacked semiconductor sub-unit to other semiconductor sub-units; and injecting a shock-absorbing material to fill a region between an upper surface of the semiconductor device of the first semiconductor sub-unit and the lower surface of the substrate of the second semiconductor sub-unit.

Claim 2

A method of producing a stacked semiconductor device having a laminated structure, comprising the steps of: forming plural semiconductor sub-units by forming a metallic bump on a lower surface of each of plural semiconductor devices, coating a pad portion on an upper surface of each of plural substrates, the pad portions and metallic bumps being positioned so as to allow contact-alignment between corresponding ones of the plural semiconductor devices and the plural substrates, and utilizing a flip-chip method, joining the corresponding plural semiconductor devices and plural substrates to form the plural semiconductor sub-units; for each of the plural semiconductor sub-units, injecting a sealing resin into a connecting region defined between the upper surface of each of the substrates and the lower surface of the joined semiconductor device so as to seal the connecting region of each semiconductor sub-unit; providing on the upper surface of the substrates of some of the semiconductor sub-units, in a region apart from the connecting region, a sub-unit connecting bump; vertically stacking the plural semiconductor sub-units on-upon-another so that a second semiconductor unit is stacked atop a first semiconductor unit and so that the connecting bump of the first semiconductor sub-unit is joined to a lower surface of the second semiconductor sub-unit; electrically connecting the first stacked semiconductor sub-unit to other semiconductor sub-units; and injecting a shock-absorbing material to fill a region between an upper surface of the semiconductor device of the first semiconductor sub-unit and the lower surface of the substrate of the second semiconductor sub-unit.

Claim 8

A method of producing a stacked semiconductor device having a laminated structure, comprising the steps of: forming at least three semiconductor units by forming a metallic bump on a lower surface of each of at least three semiconductor chips, providing a pad portion on an upper surface of each of at least three substrates, the pad portions and metallic bumps being positioned so as to allow alignment between corresponding ones of the semiconductor chips and the substrates, and utilizing a flip-chip method, joining the corresponding semiconductor chips and substrates to form the at least three semiconductor units; for each of the semiconductor units, injecting a sealing resin into a connecting region defined from the upper surface of each of the substrates and to the lower surface of the joined semiconductor chips so as to seal the connecting region of each semiconductor unit; providing, on the upper surface of the substrates of at least two of the semiconductor units, a unit lamination bump; stacking, in vertical alignment, the semiconductor units so that a second semiconductor unit is stacked atop a first semiconductor unit and so that the lamination bump of the first semiconductor unit is joined to a lower surface of the second semiconductor unit; filling a shock-absorbing material into a region between an upper surface of the semiconductor device of the first semiconductor sub-unit and the lower surface of the substrate of the second semiconductor sub-unit; electrically connecting the stacked semiconductor units to each other; and curing the shock-absorbing material.

Claim 9

A method of producing a stacked semiconductor device having a laminated structure, comprising the steps of: forming at least three semiconductor units by forming a metallic bump on a lower surface of each of at least three semiconductor chips, providing a pad portion on an upper surface of each of at least three substrates, the pad portions and metallic bumps being positioned so as to allow alignment between corresponding ones of the semiconductor chips and the substrates, and utilizing a flip-chip method, joining the corresponding semiconductor chips and substrates to form the at least three semiconductor units; for each of the semiconductor units, injecting a sealing resin into a connecting region defined from the upper surface of each of the substrates and to the lower surface of the joined semiconductor chips so as to seal the connecting region of each semiconductor unit; providing, on the upper surface of the substrates of at least two of the semiconductor units, a unit lamination bump; stacking, in vertical alignment, the semiconductor units so that a second semiconductor unit is stacked atop a first semiconductor unit and so that the lamination bump of the first semiconductor unit is joined to a lower surface of the second semiconductor unit; filling a shock-absorbing material into a region between an upper surface of the semiconductor device of the first semiconductor sub-unit and the lower surface of the substrate of the second semiconductor sub-unit; electrically connecting the stacked semiconductor units to each other; and curing the shock-absorbing material.

Claim 12

A method of producing a stacked semiconductor device having a laminated structure, comprising the steps of: forming at least three semiconductor units by forming a metallic bump on a lower surface of each of at least three semiconductor chips, providing a pad portion on an upper surface of each of at least three substrates, the pad portions and metallic bumps being positioned so as to allow alignment between corresponding ones of the semiconductor chips and the substrates, and utilizing a flip-chip method, joining the corresponding semiconductor chips and substrates to form the at least three semiconductor units; for each of the semiconductor units, injecting a sealing resin into a connecting region defined from the upper surface of each of the substrates and to the lower surface of the joined semiconductor chips so as to seal the connecting region of each semiconductor unit; curing the sealing resin; providing a shock-absorbing material layer on an upper surface of the semiconductor chips of a least two of the semiconductor units; providing, on the upper surface of the substrates of at least two of the semiconductor units, a unit lamination bump sized to extend from the upper surface of the substrate to a height higher than an upper surface of the shock-absorbing material layer; stacking, in vertical alignment, the semiconductor units so that a second semiconductor unit is stacked atop a first semiconductor unit and so that the lamination bump of the first semiconductor unit is joined to a lower surface of the second semiconductor unit; and curing the shock-absorbing material.

Claim 13

A method of producing a stacked semiconductor device having a laminated structure, comprising the steps of: forming at least three semiconductor units by forming a metallic bump on a lower surface of each of at least three semiconductor chips, providing a pad portion on an upper surface of each of at least three substrates, the pad portions and metallic bumps being positioned so as to allow alignment between corresponding ones of the semiconductor chips and the substrates, and utilizing a flip-chip method, joining the corresponding semiconductor chips and substrates to form the at least three semiconductor units; for each of the semiconductor units, injecting a sealing resin into a connecting region defined from the upper surface of each of the substrates and to the lower surface of the joined semiconductor chips so as to seal the connecting region of each semiconductor unit; curing the sealing resin; providing a shock-absorbing material layer on an upper surface of the semiconductor chips of a least two of the semiconductor units; providing, on the upper surface of the substrates of at least two of the semiconductor units, a unit lamination bump sized to extend from the upper surface of the substrate to a height higher than an upper surface of the shock-absorbing material layer; stacking, in vertical alignment, the semiconductor units so that a second semiconductor unit is stacked atop a first semiconductor unit and so that the lamination bump of the first semiconductor unit is joined to a lower surface of the second semiconductor unit; and curing the shock-absorbing material.