US6246606B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Memory using insulator traps
Assignee: Micron Technology Inc
•
Filing: 1999-09-02
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Granted: 2001-06-12
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Expires: 2019-09-02
Abstract
Abstract A memory cell provides point defect trap sites in an insulator for storing data charges. Single electrons are stored on respective point defect trap sites and a resulting parameter, such as transistor drain current, is detected. By adjusting the density of the point defect trap sites, more uniform step changes in drain current are obtained as single electrons are stored on or removed from respective trap sites. By also adjusting the trapping energy of the point defect trap sites, the memory cell provides either volatile data storage, similar to a dynamic random access memory (DRAM), or nonvolatile data storage, similar to an electrically erasable and programmable read only memory (EEPROM). The memory cell is used for storing binary or multi-state data.
Inventors
- 👤 Leonard Forbes
- 👤 Joseph E. Geusic
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 08:00
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/56; G11C11/5671; B; B82; B82Y; B82Y10/00; G11C16/00; G11C16/02; G11C16/04; G11C16/0408; G11C16/0441; G11C16/0458; H; H10; H10D; H10D30/00; H10D30/60; H10D30/68; H10D30/687; H10D30/688; G11C2216/00; G11C2216/02; G11C2216/08; H10D30/69; H10D30/691
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
77 words
A method of storing and retrieving data, the method comprising: altering the number of electrons stored on a memory cell in trap sites carried by an insulator at a density such that the trap sites are substantially shielded from each other by intervening portions of the insulator; and detecting a resulting parameter based on the number of electrons stored in the trap sites, wherein the parameter is selected from the group consisting of current, voltage, and charge.
Claim 2
Independent Claim
77 words
A method of storing and retrieving data, the method comprising: altering the number of electrons stored on a memory cell in trap sites carried by an insulator at a density such that the trap sites are substantially shielded from each other by intervening portions of the insulator; and detecting a resulting parameter based on the number of electrons stored in the trap sites, wherein the parameter is selected from the group consisting of current, voltage, and charge.
Claim 3
Dependent Claim
24 words
The method of claim 1 , wherein altering the number of electrons stored on a memory cell includes injecting electrons onto the trap sites.
Claim 4
Dependent Claim
17 words
The method of claim 2 , wherein injecting electrons onto the trap sites is by hot-electron injection.
Claim 5
Dependent Claim
24 words
The method of claim 1 , wherein altering the number of electrons stored on a memory cell includes removing electrons from the trap sites.
Claim 6
Dependent Claim
17 words
The method of claim 4 , wherein removing electrons from the trap sites is by Price-Sah tunneling.
Claim 7
Dependent Claim
21 words
The method of claim 1 , further comprising the step of reading a data state based on the detected resulting parameter.
Claim 8
Dependent Claim
38 words
The method of claim 1 , further comprising the step of reading a number of possible data states based on the detected resulting parameter, wherein the number of possible data states corresponds to the number of trap sites.
Claim 9
Dependent Claim
18 words
The method of claim 1 , wherein altering the number of electrons is based on a digital input.
Claim 10
Dependent Claim
18 words
The method of claim 1 , wherein altering the number of electrons is based on an analog input.
Claim 11
Independent Claim
91 words
A method of storing and retrieving data, the method comprising: altering the number of electrons stored on a memory cell in trap sites carried by an insulator at a density such that the trap sites are substantially shielded from each other by intervening portions of the insulator and wherein the trap sites are capable of capturing no more than one electron; and detecting a resulting parameter based on the number of electrons stored in the trap sites, wherein the parameter is selected from the group consisting of current, voltage, and charge.
Claim 12
Independent Claim
91 words
A method of storing and retrieving data, the method comprising: altering the number of electrons stored on a memory cell in trap sites carried by an insulator at a density such that the trap sites are substantially shielded from each other by intervening portions of the insulator and wherein the trap sites are capable of capturing no more than one electron; and detecting a resulting parameter based on the number of electrons stored in the trap sites, wherein the parameter is selected from the group consisting of current, voltage, and charge.
Claim 13
Dependent Claim
23 words
The method of claim 10 wherein altering the number of electrons stored on a memory cell includes injecting electrons onto the trap sites.
Claim 14
Dependent Claim
17 words
The method of claim 11 , wherein injecting electrons onto the trap sites is by hot-electron injection.
Claim 15
Dependent Claim
24 words
The method of claim 10 , wherein altering the number of electrons stored on a memory cell includes removing electrons from the trap sites.
Claim 16
Dependent Claim
17 words
The method of claim 13 , wherein removing electrons from the trap sites is by Price-Sah tunneling.
Claim 17
Dependent Claim
21 words
The method of claim 10 , further comprising the step of reading a data state based on the detected resulting parameter.
Claim 18
Dependent Claim
38 words
The method of claim 10 , further comprising the step of reading a number of possible data states based on the detected resulting parameter, wherein the number of possible data states corresponds to the number of trap sites.
Claim 19
Dependent Claim
18 words
The method of claim 10 , wherein altering the number of electrons is based on a digital input.
Claim 20
Dependent Claim
18 words
The method of claim 10 , wherein altering the number of electrons is based on an analog input.
References Cited (Backward Citations)
US4507673A
Cited
US4939559A
Cited
US4661833A
Cited
US5021999A
Cited
US5111430A
Cited
US5027171A
Cited
JPH03222367A
Cited
US5296560A
Cited
US5253196A
Cited
US5449941A
Cited
US5388069A
Cited
US5317535A
Cited
JPH06224431A
Cited
US5438544A
Cited
JPH06302828A
Cited
US5493140A
Cited
US5467306A
Cited
US5430670A
Cited
US5424993A
Cited
US5434815A
Cited
US5508543A
Cited
US5485422A
Cited
US5627781A
Cited
US5477485A
Cited
JPH08255878A
Cited
US5670790A
Cited
US5714766A
Cited
US5740104A
Cited
US5754477A
Cited
US5959896A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-06-11 | 2004-12-11 | 2005-06-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-06-11 | 2008-12-11 | 2009-06-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-06-11 | 2012-12-11 | 2013-06-12 | $7700.00 | Window Closed / Lapsed |