Abstract Multiple logic levels can be programmed into a single EPROM or FLASH memory cell by applying one of a corresponding number of programming voltages to the control gate of a memory cell that is biased so that the source-to-substrate junction becomes forward-biased and the drain-to-substrate junction becomes reverse-biased. During programming, the bias conditions form substrate hot electrons which, in addition to the channel hot electrons, accumulate on the floating gate. By utilizing the substrate hot electrons, a much lower control gate voltage can be utilized during programming. More importantly, however, once the channel hot electrons cease to exist, the substrate hot electrons and holes converge to a stable charge that is related to the control gate voltage used during programming and the programmed threshold voltage of the cell.
A method for programming a single floating-gate memory cell to store one of three or more threshold voltages, the memory cell having a source formed in a substrate, a drain formed in the substrate a distance apart from the source, a floating gate formed over the substrate, and a control gate formed over the floating gate, the method comprising the steps of: selecting one of three or more programming voltages as a selected programming voltage, the three or more programming voltages corresponding to said three or more threshold voltages; floating the substrate; applying a first voltage to the source; applying a second voltage to the drain wherein the second voltage is greater than the first voltage; and applying the selected programming voltage to the control gate of the memory cell for a predetermined time.
Claim 2
Independent Claim
134 words
A method for programming a single floating-gate memory cell to store one of three or more threshold voltages, the memory cell having a source formed in a substrate, a drain formed in the substrate a distance apart from the source, a floating gate formed over the substrate, and a control gate formed over the floating gate, the method comprising the steps of: selecting one of three or more programming voltages as a selected programming voltage, the three or more programming voltages corresponding to said three or more threshold voltages; floating the substrate; applying a first voltage to the source; applying a second voltage to the drain wherein the second voltage is greater than the first voltage; and applying the selected programming voltage to the control gate of the memory cell for a predetermined time.
Claim 3
Dependent Claim
11 words
The method of claim 1 wherein the first voltage includes ground.
Claim 4
Dependent Claim
18 words
The method of claim 1 wherein a maximum programming voltage is less than or equal to five volts.
Claim 5
Dependent Claim
17 words
The method of claim 1 wherein the predetermined time is less than or equal to two seconds.
Claim 6
Dependent Claim
18 words
The method of claim 1 wherein the second voltage falls within a range of four to eight volts.