US6238751B1
Expired / Lapsed
US
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Chemical vapor deposition of low density silicon dioxide films
Assignee: Novellus Systems Inc
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Filing: 2000-03-16
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Granted: 2001-05-29
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Expires: 2020-03-16
Abstract
Abstract A process for producing low-density, porous silica films in a vacuum environment is provided. The films are advantageous for use as low dielectric constant insulating materials in semiconductor devices. In a first step, an organic-group-containing silica precursor is deposited on a semiconductor substrate in a chemical vapor deposition reactor. In a second step, the organic groups are removed by heating in a furnace in an oxidizing environment or by exposure to an oxidizing plasma, thereby creating a low density silica film.
Inventors
- 👤 Thomas Weller Mountsier
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 23:18
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; C23C16/402; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/65; H10P14/6516; H10P14/6529; H10P14/6532; H10P14/6336; H10P14/66; H10P14/665; H10P14/668; H10P14/6681; H10P14/6684; H10P14/6686; H10P14/69215; Y; Y10; Y10T; Y10T428/00; Y10T428/249921; Y10T428/249953; Y10T428/249967; Y10T428/24997; Y10T428/249987; Y10T428/24999
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
69 words
A process of forming a film on a semiconductor substrate, the film having high organic content, the process comprising: providing a semiconductor substrate in a chemical vapor deposition reactor; providing a silica precursor gas in the reactor, wherein the silica precursor gas contains organic groups; and depositing a film of the silica precursor on the substrate in an environment with low oxidant content, whereby the film comprises organic groups.
Claim 2
Dependent Claim
69 words
A process of forming a film on a semiconductor substrate, the film having high organic content, the process comprising: providing a semiconductor substrate in a chemical vapor deposition reactor; providing a silica precursor gas in the reactor, wherein the silica precursor gas contains organic groups; and depositing a film of the silica precursor on the substrate in an environment with low oxidant content, whereby the film comprises organic groups.
Claim 3
Dependent Claim
24 words
The process of claim 10 wherein the silica precursor comprises one or more members selected from the group consisting of organosilicates, organosilanes, and alkylalkoxysilanes.
Claim 4
Dependent Claim
20 words
The process of claim 1 wherein the silica precursor is selected from the group consisting of tetraethylorthosilicate, tetramethylorthosilicate, and tetramethylsilane.
Claim 5
Dependent Claim
11 words
The process of claim 3 wherein the silica precursor comprises tetramethylsilane.
Claim 6
Dependent Claim
20 words
The process of claim 2 wherein the silica precursor is selected from the group consisting of tetramethylcyclotetrasiloxane, octamethylcyclotetrasiloxane, and tetramethyldisiloxane.
Claim 7
Dependent Claim
28 words
The process of claim 1 wherein the environment with low oxidant content comprises a gas selected from the group consisting of nitrogen, an inert gas, and combinations thereof.
Claim 8
Dependent Claim
17 words
The process of claim 1 further comprising providing a radio frequency discharge in the reactor during deposition.
Claim 9
Dependent Claim
16 words
A film on a semiconductor substrate, the film produced by the process of claim 7 .
References Cited (Backward Citations)
US5362526A
Cited
US4872947A
Cited
US4869781A
Cited
US4987102A
Cited
US5354611A
Cited
US5124014A
Cited
US5120680A
Cited
US5426076A
Cited
US5360646A
Cited
US5462899A
Cited
US5593741A
Cited
US5470802A
Cited
US5488015A
Cited
US5569058A
Cited
US5840631A
Cited
US5686031A
Cited
US5763018A
Cited
US6054206A
Cited
US6090724A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-05-28 | 2004-11-27 | 2005-05-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-05-28 | 2008-11-27 | 2009-05-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-05-28 | 2012-11-27 | 2013-05-29 | $7700.00 | Window Closed / Lapsed |