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Patent US6232643B1 successfully refreshed from Google Patents.
US6232643B1
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US
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Memory using insulator traps
Assignee: Micron Technology Inc
•
Filing: 1997-11-13
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Granted: 2001-05-15
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Expires: 2017-11-13
Abstract
Abstract A memory cell provides point defect trap sites in an insulator for storing data charges. Single electrons are stored on respective point defect trap sites and a resulting parameter, such as transistor drain current, is detected. By adjusting the density of the point defect trap sites, more uniform step changes in drain current are obtained as single electrons are stored on or removed from respective trap sites. By also adjusting the trapping energy of the point defect trap sites, the memory cell provides either volatile data storage, similar to a dynamic random access memory (DRAM), or nonvolatile data storage, similar to an electrically erasable and programmable read only memory (EEPROM). The memory cell is used for storing binary or multi-state data.
Inventors
- 👤 Leonard Forbes
- 👤 Joseph E. Geusic
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 08:33
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/56; G11C11/5671; B; B82; B82Y; B82Y10/00; G11C16/00; G11C16/02; G11C16/04; G11C16/0408; G11C16/0441; G11C16/0458; H; H10; H10D; H10D30/00; H10D30/60; H10D30/68; H10D30/687; H10D30/688; G11C2216/00; G11C2216/02; G11C2216/08; H10D30/69; H10D30/691
Claims Analysis
Total Claims: 38
Claim 1
Independent Claim
42 words
A memory cell comprising an insulator carrying trap sites at a density such that the trap sites are substantially shielded from each other by intervening portions of the insulator wherein the trap sites are capable of capturing no more than one electron.
Claim 2
Dependent Claim
42 words
A memory cell comprising an insulator carrying trap sites at a density such that the trap sites are substantially shielded from each other by intervening portions of the insulator wherein the trap sites are capable of capturing no more than one electron.
Claim 3
Dependent Claim
17 words
The memory cell of claim 1 , wherein the trap sites are point defects in the insulator.
Claim 4
Dependent Claim
24 words
The memory cell of claim 1 , wherein the trap sites have a cross-sectional area of capture of approximately 10 −15 cm 2 .
Claim 5
Dependent Claim
32 words
The memory cell of claim 1 , wherein the trap sites have a retention time of approximately between 1 second and 3 million years at a temperature of approximately 85 degrees Celsius.
Claim 6
Dependent Claim
34 words
The memory cell of claim 1 , wherein the trap sites are carried in the insulator at an areal concentration that is approximately between 10 12 and 10 15 trap sites per square centimeter.
Claim 7
Dependent Claim
22 words
The memory cell of claim 1 , wherein ones of the trap sites do not substantially overlap others of the trap sites.
Claim 8
Dependent Claim
46 words
The memory cell of claim 1 , wherein the insulator is formed on a substrate, and the insulator has a thickness, and the trap sites are carried in the insulator at a distance from the substrate that is approximately ⅓ of a thickness of the insulator.
Claim 9
Dependent Claim
45 words
A memory cell comprising an insulator carrying trap sites at a density such that the trap sites are substantially shielded from each other by intervening portions of the insulator wherein the trap sites have a trapping energy of approximately between 1.3 eV and 2.4 eV.
Claim 10
Dependent Claim
45 words
A memory cell comprising an insulator carrying trap sites at a density such that the trap sites are substantially shielded from each other by intervening portions of the insulator wherein the trap sites have a trapping energy of approximately between 1.3 eV and 2.4 eV.
Claim 11
Dependent Claim
54 words
A memory cell comprising an insulator carrying trap sites at a density such that the trap sites are substantially shielded from each other by intervening portions of the insulator wherein the insulator is selected from a group consisting essentially of amorphous silicon dioxide, quartz, aluminum trioxide, titanium dioxide, lithium niobate, silicon nitride, and diamond.
Claim 12
Dependent Claim
54 words
A memory cell comprising an insulator carrying trap sites at a density such that the trap sites are substantially shielded from each other by intervening portions of the insulator wherein the insulator is selected from a group consisting essentially of amorphous silicon dioxide, quartz, aluminum trioxide, titanium dioxide, lithium niobate, silicon nitride, and diamond.
Claim 13
Dependent Claim
40 words
A memory cell comprising an insulator carrying point defect trap sites that are electrically isolated from each other by intervening portions of the insulator wherein the trap sites have a trapping energy of approximately between 1.3 eV and 2.4 eV.
Claim 14
Dependent Claim
40 words
A memory cell comprising an insulator carrying point defect trap sites that are electrically isolated from each other by intervening portions of the insulator wherein the trap sites have a trapping energy of approximately between 1.3 eV and 2.4 eV.
Claim 15
Dependent Claim
24 words
The memory cell of claim 10 , wherein the trap sites have a cross-sectional area of capture of approximately 10 −15 cm 2 .
Claim 16
Dependent Claim
31 words
The memory cell of claim 10 , wherein the trap sites have a retention time of approximately between 1 second and 3 million years at a temperature of 85 degrees Celsius.
Claim 17
Dependent Claim
34 words
The memory cell of claim 10 , wherein the trap sites are carried in the insulator at an areal concentration that is approximately between 10 12 and 10 15 trap sites per square centimeter.
Claim 18
Dependent Claim
46 words
The memory cell of claim 10 , wherein the insulator is formed on a substrate, and the insulator has a thickness, and the trap sites are carried in the insulator at a distance from the substrate that is approximately ⅓ of a thickness of the insulator.
Claim 19
Dependent Claim
49 words
A memory cell comprising an insulator carrying point defect trap sites that are electrically isolated from each other by intervening portions of the insulator wherein the insulator is selected from a group consisting essentially of amorphous silicon dioxide, quartz, aluminum trioxide, titanium dioxide, lithium niobate, silicon nitride, and diamond.
Claim 20
Dependent Claim
49 words
A memory cell comprising an insulator carrying point defect trap sites that are electrically isolated from each other by intervening portions of the insulator wherein the insulator is selected from a group consisting essentially of amorphous silicon dioxide, quartz, aluminum trioxide, titanium dioxide, lithium niobate, silicon nitride, and diamond.
Claim 21
Dependent Claim
81 words
A memory cell, comprising: a transistor, including a source a drain, a channel region between the source and drain, a control gate, an insulator between the control gate and the channel region, and a floating gate; and wherein the floating gate includes point defect trap sites that are carried by the insulator and electrically isolated from each other by intervening portions of the insulator and wherein the trap sites have a trapping energy of approximately between 1.3 eV and 2.4 eV.
Claim 22
Dependent Claim
81 words
A memory cell, comprising: a transistor, including a source a drain, a channel region between the source and drain, a control gate, an insulator between the control gate and the channel region, and a floating gate; and wherein the floating gate includes point defect trap sites that are carried by the insulator and electrically isolated from each other by intervening portions of the insulator and wherein the trap sites have a trapping energy of approximately between 1.3 eV and 2.4 eV.
Claim 23
Dependent Claim
36 words
The memory cell of claim 16 , wherein the trap sites are carried by the insulator at a density such that the trap sites are substantially shielded from each other by intervening portions of the insulator.
Claim 24
Dependent Claim
20 words
The memory cell of claim 16 , wherein the trap sites are capable of capturing no more than one electron.
Claim 25
Dependent Claim
24 words
The memory cell of claim 16 , wherein the trap sites have a cross-sectional area of capture of approximately 10 −15 cm 2 .
Claim 26
Dependent Claim
31 words
The memory cell of claim 16 , wherein the trap sites have a retention time of approximately between 1 second and 3 million years at a temperature of 85 degrees Celsius.
Claim 27
Dependent Claim
90 words
A memory cell, comprising: a transistor, including a source, a drain, a channel region between the source and drain, a control gate, an insulator between the control gate and the channel region, and a floating gate; and wherein the floating gate includes point defect trap sites that are carried by the insulator and electrically isolated from each other by intervening portions of the insulator and wherein the insulator is selected from a group consisting essentially of amorphous silicon dioxide, quartz, aluminum trioxide, titanium dioxide, lithium niobate, silicon nitride, and diamond.
Claim 28
Dependent Claim
90 words
A memory cell, comprising: a transistor, including a source, a drain, a channel region between the source and drain, a control gate, an insulator between the control gate and the channel region, and a floating gate; and wherein the floating gate includes point defect trap sites that are carried by the insulator and electrically isolated from each other by intervening portions of the insulator and wherein the insulator is selected from a group consisting essentially of amorphous silicon dioxide, quartz, aluminum trioxide, titanium dioxide, lithium niobate, silicon nitride, and diamond.
Claim 29
Dependent Claim
102 words
A memory cell, comprising: a transistor, including a source, a drain, a channel region between the source and drain, a control gate, an insulator between the control gate and the channel region, and a floating gate; and wherein the floating gate includes point defect trap sites that are carried by the insulator and electrically isolated from each other by intervening portions of the insulator and wherein the insulator has a thickness between the control gate and the channel region, and the point defects are disposed at a distance from the channel region that is approximately ⅓ of the thickness of the insulator.
Claim 30
Dependent Claim
102 words
A memory cell, comprising: a transistor, including a source, a drain, a channel region between the source and drain, a control gate, an insulator between the control gate and the channel region, and a floating gate; and wherein the floating gate includes point defect trap sites that are carried by the insulator and electrically isolated from each other by intervening portions of the insulator and wherein the insulator has a thickness between the control gate and the channel region, and the point defects are disposed at a distance from the channel region that is approximately ⅓ of the thickness of the insulator.
Claim 31
Dependent Claim
92 words
A memory cell, comprising: a transistor, including a source, a drain, a channel region between the source and drain, a control gate, an insulator between the control gate and the channel region, and a floating gate; and wherein the floating gate includes point defect trap sites that are carried by the insulator and electrically isolated from each other by intervening portions of the insulator and wherein the trap sites are carried in the insulator at an areal concentration that is approximately between 10 12 and 10 15 trap sites per square centimeter.
Claim 32
Dependent Claim
92 words
A memory cell, comprising: a transistor, including a source, a drain, a channel region between the source and drain, a control gate, an insulator between the control gate and the channel region, and a floating gate; and wherein the floating gate includes point defect trap sites that are carried by the insulator and electrically isolated from each other by intervening portions of the insulator and wherein the trap sites are carried in the insulator at an areal concentration that is approximately between 10 12 and 10 15 trap sites per square centimeter.
Claim 33
Dependent Claim
29 words
A memory cell comprising an insulator carrying trap sites at a density such that the trap sites are substantially shielded from each other by intervening portions of the insulator.
Claim 34
Dependent Claim
29 words
A memory cell comprising an insulator carrying trap sites at a density such that the trap sites are substantially shielded from each other by intervening portions of the insulator.
Claim 35
Dependent Claim
24 words
A memory cell comprising an insulator carrying point defect trap sites that are electrically isolated from each other by intervening portions of the insulator.
Claim 36
Dependent Claim
24 words
A memory cell comprising an insulator carrying point defect trap sites that are electrically isolated from each other by intervening portions of the insulator.
Claim 37
Dependent Claim
64 words
A memory cell, comprising: a transistor, including a source, a drain, a channel region between the source and drain, a control gate, an insulator between the control gate and the channel region, and a floating gate; and wherein the floating gate includes point defect trap sites that are carried by the insulator and electrically isolated from each other by intervening portions of the insulator.
Claim 38
Dependent Claim
64 words
A memory cell, comprising: a transistor, including a source, a drain, a channel region between the source and drain, a control gate, an insulator between the control gate and the channel region, and a floating gate; and wherein the floating gate includes point defect trap sites that are carried by the insulator and electrically isolated from each other by intervening portions of the insulator.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-05-14 | 2004-11-13 | 2005-05-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-05-14 | 2008-11-13 | 2009-05-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-05-14 | 2012-11-13 | 2013-05-15 | $7700.00 | Window Closed / Lapsed |