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Patent US6171934B1 successfully refreshed from Google Patents.
US6171934B1
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Recovery of electronic properties in process-damaged ferroelectrics by voltage-cycling
Assignee: Qimonda AG
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Filing: 1998-08-31
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Granted: 2001-01-09
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Expires: 2018-08-31
Abstract
Abstract An integrated circuit is formed containing a metal-oxide ferroelectric thin film. An voltage-cycling recovery process is conducted to reverse the degradation of ferroelectric properties caused by hydrogen. The voltage-cycling recovery process is conducted by applying from 10 4 to 10 11 voltage cycles with a voltage amplitude of from 1 to 15 volts. Conducting voltage-cycling at a higher temperature in the range 30-200° C. enhances recovery. Preferably the metal oxide thin film comprises layered superlattice material. Preferably the layered superlattice material comprises strontium bismuth tantalate or strontium bismuth tantalum niobate. If the integrated circuit manufacture includes a forming-gas anneal, then the voltage-cycling recovery process is performed after the forming-gas anneal. The voltage-cycling recovery process obviates oxygen-recovery annealing, and it allows continued use of conventional hydrogen-rich plasma processes and forming-gas anneals without the risk of permanent damage to the ferroelectric thin film.
Inventors
- 👤 Vikram Joshi
- 👤 Narayan Solayappan
- 👤 Walter Hartner
- 👤 G{umlaut over (u)}nther Schindler
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 04:34
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/80; H10B; H10B53/00; H10B53/30; H10D1/00; H10D1/60; H10D1/68; H10D1/682
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
65 words
A method for fabricating an integrated circuit comprising the steps of: forming an integrated circuit portion including a thin film of ferroelectric metal oxide material; conducting process substeps causing hydrogenating or reducing conditions; and thereafter conducting a voltage-cycling recovery process by applying a number of voltage cycles to said ferroelectric metal oxide material, wherein said number of voltage cycles is 10 4 cycles or greater.
Claim 2
Independent Claim
65 words
A method for fabricating an integrated circuit comprising the steps of: forming an integrated circuit portion including a thin film of ferroelectric metal oxide material; conducting process substeps causing hydrogenating or reducing conditions; and thereafter conducting a voltage-cycling recovery process by applying a number of voltage cycles to said ferroelectric metal oxide material, wherein said number of voltage cycles is 10 4 cycles or greater.
Claim 3
Dependent Claim
43 words
A method according to claim 1 , wherein said number of voltage cycles is in a range from approximately 10 4 cycles to 10 11 cycles, and said voltage cycles have a voltage amplitude in a range from 1 volts to 15 volts.
Claim 4
Dependent Claim
41 words
A method according to claim 1 wherein said number of voltage cycles is about 10 5 and said voltage amplitude is selected from a range of voltages which are greater than 5 volts and less than or equal to 15 volts.
Claim 5
Dependent Claim
24 words
A method according to claim 1 wherein said number of voltage cycles is about 10 5 and said voltage amplitude is about 10 volts.
Claim 6
Dependent Claim
24 words
A method according to claim 1 wherein said number of voltage cycles is about 10 9 and said voltage amplitude is about 5 volts.
Claim 7
Dependent Claim
26 words
A method according to claim 1 wherein said step of conducting a voltage-cycling recovery process is done at a temperature from 30° C. to 200° C.
Claim 8
Dependent Claim
26 words
A method according to claim 6 wherein said step of conducting a voltage-cycling recovery process is done at a temperature from 125° C. to 175° C.
Claim 9
Dependent Claim
22 words
A method according to claim 1 wherein said ferroelectric metal oxide material comprises a ferroelectric perovskite material of the ABO 3 -type.
Claim 10
Dependent Claim
16 words
A method according to claim 8 wherein said ferroelectric perovskite material comprises lead zirconium titanate (“PZT”).
Claim 11
Dependent Claim
17 words
A method according to claim 8 wherein said ferroelectric perovskite material comprises lead lanthanum zirconium titanate (“PLZT”).
Claim 12
Dependent Claim
17 words
A method according to claim 1 wherein said ferroelectric metal oxide material comprises ferroelectric layered superlattice material.
Claim 13
Dependent Claim
16 words
A method according to claim 11 wherein said ferroelectric layered superlattice material comprises strontium bismuth tantalate.
Claim 14
Dependent Claim
17 words
A method according to claim 11 wherein said ferroelectric layered superlattice material comprises strontium bismuth tantalum niobate.
Claim 15
Dependent Claim
25 words
A method according to claim 1 wherein said substeps causing hydrogenating or reducing conditions comprise performing a forming-gas anneal before conducting said voltage-cycling recovery process.
Claim 16
Dependent Claim
31 words
A method according to claim 14 wherein said forming-gas anneal is performed at a temperature range from 300° to 1000° C. for a time duration from one minute to two hours.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2004-01-09 | 2004-07-10 | 2005-01-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-01-09 | 2008-07-10 | 2009-01-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-01-09 | 2012-07-10 | 2013-01-09 | $7700.00 | Window Closed / Lapsed |