Patent US4904419A successfully refreshed from Google Patents.
Patent US5359693A successfully refreshed from Google Patents.
Patent US6153490A successfully refreshed from Google Patents.
US6153490A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for forming integrated circuit capacitor and memory
Assignee: Texas Instruments Inc
•
Filing: 1998-06-26
•
Granted: 2000-11-28
•
Expires: 2018-06-26
Abstract
Abstract A method for etching a feature in a platinum layer 834 overlying a second material 818 without substantially etching the second material. The method includes the the steps of: forming an adhesion-promoting layer 824 between the platinum layer and the second material; forming a hardmask layer 829 over the platinum layer; patterning and etching the hardmask layer in accordance with desired dimensions of the feature; and etching portions of the platinum layer not covered by the hardmask layer 832, the etching stopping on the adhesion-promoting layer. In further embodiments the adhesion-promoting and hardmask layers are Ti-Al-N including at least 1% of aluminum.
Inventors
- 👤 Guoqiang Xing
- 👤 Scott R. Summerfelt
- 👤 Rajesh Khamankar
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:16
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10P; H10P50/00; H10P50/20; H10P50/26; H10P50/264; H10P50/266; H10P50/267; H10P50/71; H10D1/682
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
91 words
A method for etching a feature in a platinum layer overlying a second material without substantially etching said second material, comprising the steps of: (a) forming an adhesion-promoting layer of Ti--Al--N between said platinum layer and said second material, said Ti--Al--N containing at least 1% Al; (b) forming a hardmask layer over said platinum layer; (c) patterning and etching said hardmask layer in accordance with desired dimensions of said feature; and (d) etching portions of said platinum layer not covered by said hardmask layer, said etching stopping on said adhesion-promoting layer.
Claim 2
Independent Claim
91 words
A method for etching a feature in a platinum layer overlying a second material without substantially etching said second material, comprising the steps of: (a) forming an adhesion-promoting layer of Ti--Al--N between said platinum layer and said second material, said Ti--Al--N containing at least 1% Al; (b) forming a hardmask layer over said platinum layer; (c) patterning and etching said hardmask layer in accordance with desired dimensions of said feature; and (d) etching portions of said platinum layer not covered by said hardmask layer, said etching stopping on said adhesion-promoting layer.
Claim 3
Dependent Claim
17 words
The method of claim 1 wherein step (b) comprises forming a Ti--Al--N layer over said platinum layer.
Claim 4
Dependent Claim
15 words
The method of claim 2 wherein said Ti--AL--N layer comprises at least 1% of aluminum.
Claim 5
Dependent Claim
17 words
The method of claim 1 wherein step (c) comprises etching said hardmask layer with a chlorine-bearing etchant.
Claim 6
Dependent Claim
17 words
The method of claim 1 step (d) comprises etching portions of said platinum with an oxygen-bearing etchant.
Claim 7
Independent Claim
51 words
A method for etching platinum, comprising the steps of: (a) forming a Ti--Al--N hardmask layer over said platinum, said Ti--Al--N containing at least 1% Al; (b) patterning and etching said Ti--Al--N hardmask layer with a chlorine-bearing etchant to form a desired pattern; and (c) etching said platinum with an oxygen-bearing etchant.
Claim 8
Independent Claim
51 words
A method for etching platinum, comprising the steps of: (a) forming a Ti--Al--N hardmask layer over said platinum, said Ti--Al--N containing at least 1% Al; (b) patterning and etching said Ti--Al--N hardmask layer with a chlorine-bearing etchant to form a desired pattern; and (c) etching said platinum with an oxygen-bearing etchant.
Claim 9
Dependent Claim
28 words
The method of claim 6 where said chlorine-bearing etchant is selected from a group consisting of Cl 2 , Cl 2 /Ar, and Cl 2 /O 2 .
Claim 10
Dependent Claim
24 words
The method of claim 6 wherein said oxygen-bearing etchant is selected from a group consisting of Ar/O 2 , Cl 2 /O 2 .
Claim 11
Dependent Claim
26 words
The method of claim 7 wherein said chlorine-bearing etchant is Cl 2 /O 2 , and contains a lesser amount of oxygen than said oxygen-bearing etchant.
Claim 12
Dependent Claim
29 words
The method of claim 6 wherein said etching in step (b) is performed in a plasma etcher at a lower bias power than in said etching in step (c).
References Cited (Backward Citations)
US5508141A
Cited
US5231306A
Cited
US5360995A
Cited
US5675186A
Cited
US5504041A
Cited
US5679980A
Cited
US5851896A
Cited
US5922466A
Cited
US5576579A
Cited
US5776823A
Cited
US5796166A
Cited
US5609927A
Cited
US5930639A
Cited
US6010928A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-11-28 | 2004-05-29 | 2004-11-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-11-28 | 2008-05-29 | 2008-11-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-11-28 | 2012-05-29 | 2012-11-28 | $7700.00 | Window Closed / Lapsed |