US5776823A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Tasin oxygen diffusion barrier in multilayer structures
Assignee: GlobalFoundries Inc
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Filing: 1996-05-08
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Granted: 1998-07-07
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Expires: 2016-05-08
Abstract
Abstract A multilayer structure having an oxygen or dopant diffusion barrier fabricated of an electrically conductive, thermally stable material of refractory metal-silicon-nitrogen which is resistant to oxidation, prevents out-diffusion of dopants from silicon and has a wide process window wherein the refractory metal is selected from Ta, W, Nb, V, Ti, Zr, Hf, Cr and Mo.
Inventors
- 👤 Paul David Agnello
- 👤 Cyril Cabral, Jr.
- 👤 Alfred Grill
- 👤 Christopher Vincent Jahnes
- 👤 Thomas John Licata
- 👤 Ronnen Andrew Roy
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 22:11
CPC Classifications
H; H10; H10P; H10P36/00; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/0134; H10D1/00; H10D1/60; H10D1/62; H10D1/66; H10D64/01304; H10D64/01306; H10D64/01308; H10D64/01312; H10D64/01344; H10D64/60; H10D64/66; H10D64/661; H10D64/662; H10D64/664; H10D64/665; H10D64/666; H10D64/68; H10D64/681; H10D64/685; H10D64/693; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0165; H10D84/0172; H10D84/0174; H10D84/0177; H10D84/02; H10D84/03; H10D84/038
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
64 words
A method of preventing oxidation of a silicon substrate in a semiconductor device comprising the step of depositing a diffusion barrier layer of refractory metal-silicon-nitrogen film between said silicon structure and an oxygen source, wherein said deposition step for the diffusion barrier layer further comprises the deposition of alternating refractory metal-nitrogen and silicon-nitrogen sub-layers each having a thickness of not more than 10 nm.
Claim 2
Independent Claim
64 words
A method of preventing oxidation of a silicon substrate in a semiconductor device comprising the step of depositing a diffusion barrier layer of refractory metal-silicon-nitrogen film between said silicon structure and an oxygen source, wherein said deposition step for the diffusion barrier layer further comprises the deposition of alternating refractory metal-nitrogen and silicon-nitrogen sub-layers each having a thickness of not more than 10 nm.
Claim 3
Independent Claim
67 words
A method of preventing oxidation of a silicon structure in a semiconductor device comprising the step of depositing a diffusion barrier layer of TaSiN film between said silicon structure and an oxygen source, wherein said TaSiN film consists of between about 20% and about 40% Ta, between about 10% and about 30% Si and between about 30% and about 60% N, and sub-layers of TaN and SiN.
Claim 4
Independent Claim
67 words
A method of preventing oxidation of a silicon structure in a semiconductor device comprising the step of depositing a diffusion barrier layer of TaSiN film between said silicon structure and an oxygen source, wherein said TaSiN film consists of between about 20% and about 40% Ta, between about 10% and about 30% Si and between about 30% and about 60% N, and sub-layers of TaN and SiN.
Claim 5
Independent Claim
71 words
A method for preventing dopant diffusion in a gate stack having a doped silicon layer and a refractory metal silicide layer comprising the step of forming a refractory metal-silicon-nitrogen layer between said doped silicon layer and said refractory metal silicide layer, wherein said steps of forming the diffusion barrier layer further comprising the deposition of alternating refractory metal-nitrogen and silicon-nitrogen sub-layers each having a thickness of not more than 10 nm.
Claim 6
Independent Claim
71 words
A method for preventing dopant diffusion in a gate stack having a doped silicon layer and a refractory metal silicide layer comprising the step of forming a refractory metal-silicon-nitrogen layer between said doped silicon layer and said refractory metal silicide layer, wherein said steps of forming the diffusion barrier layer further comprising the deposition of alternating refractory metal-nitrogen and silicon-nitrogen sub-layers each having a thickness of not more than 10 nm.
Claim 7
Dependent Claim
20 words
A method according to claim 3, wherein said refractory metal-silicon-nitrogen layer is TaSiN consisting of sub-layers of TaN and SiN.
Claim 8
Independent Claim
72 words
A method for preventing dopant diffusion in a gate stack having a doped silicon layer and a refractory metal silicide layer comprising the step of forming a refractory metal-silicon-nitrogen layer between said doped silicon layer and said refractory metal silicide layer by a physical vapor deposition method or by a chemical vapor deposition method, said refractory metal is selected from the group consisting of W, Nb, V, Zr, Hf, Cr and Mo.
Claim 9
Independent Claim
72 words
A method for preventing dopant diffusion in a gate stack having a doped silicon layer and a refractory metal silicide layer comprising the step of forming a refractory metal-silicon-nitrogen layer between said doped silicon layer and said refractory metal silicide layer by a physical vapor deposition method or by a chemical vapor deposition method, said refractory metal is selected from the group consisting of W, Nb, V, Zr, Hf, Cr and Mo.
Claim 10
Independent Claim
71 words
A method for preventing dopant diffusion in a gate stack having a doped silicon layer and a refractory metal silicide layer comprising the step of forming a refractory metal-silicon-nitrogen layer between said doped silicon layer and said refractory metal silicide layer, said refractory metal is selected from the group consisting of W, Nb, V, Zr, Hf, Cr and Mo, and said refractory metal-silicon-nitrogen layer is deposited as a homogeneous ternary alloy.
Claim 11
Independent Claim
71 words
A method for preventing dopant diffusion in a gate stack having a doped silicon layer and a refractory metal silicide layer comprising the step of forming a refractory metal-silicon-nitrogen layer between said doped silicon layer and said refractory metal silicide layer, said refractory metal is selected from the group consisting of W, Nb, V, Zr, Hf, Cr and Mo, and said refractory metal-silicon-nitrogen layer is deposited as a homogeneous ternary alloy.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-07-06 | 2002-01-05 | 2002-07-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-07-06 | 2006-01-05 | 2006-07-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-07-06 | 2010-01-05 | 2010-07-07 | $7700.00 | Window Closed / Lapsed |