Patent US6143657A successfully refreshed from Google Patents.
US6143657A
Expired / Lapsed
US
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Method of increasing the stability of a copper to copper interconnection process and structure manufactured thereby
Assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Filing: 1999-01-04
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Granted: 2000-11-07
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Expires: 2019-01-04
Abstract
Abstract A via is formed between a copper conductor and a second copper conductor in a thin film electronic device with a copper plug interconnecting the copper conductor and the second copper conductor. Form a stop layer over the first copper conductor and a dielectric layer over the stop layer. Pattern the dielectric and etch stop layers by etching a hole therethrough down into a copper conductor leaving an exposed surface of the copper conductor and exposed sidewalls of the dielectric layer and the etch stop layer. Grow a copper germanide (Cu 3 Ge) compound, thin film at the base of the hole on the exposed surface of the copper conductor from exposure to germane GeH 4 gas. Form a barrier layer over the copper germanide (Cu 3 Ge) compound, thin film, the dielectric layer and the first copper conductor. The barrier layer forms a via hole in the hole. Form a second copper conductor including the copper plug over the barrier layer, the copper plug filling the narrow via hole.
Inventors
- 👤 Chung-Shi Liu
- 👤 Chen-Hua Yu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 06:03
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/055; H10W20/033; H10W20/056; H10W20/057; H10W20/071; H10W20/081; H10W20/083; H10W20/40; H10W20/41; H10W20/42; H10W20/425; H10W20/45; H10W20/48; Y; Y10; Y10S; Y10S257/00; Y10S257/915
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
172 words
A method of forming a via contact between a first copper conductor and a second copper conductor in a thin film electronic device with a copper plug interconnecting said first copper conductor and said second copper conductor comprising: forming a stop layer over said first copper conductor, forming a dielectric layer over said stop layer, patterning said dielectric layer and said etch stop layer to etch a hole therethrough down into first copper conductor leaving an exposed surface of said first copper conductor and exposed sidewalls of said dielectric layer and said etch stop layer, growing a copper germanium thin film at the base of said hole on the exposed surface of said first copper conductor, forming a barrier layer over, as follows: a) said copper germanium thin film, b) said dielectric layer, and c) said first copper conductor, said barrier layer forming a narrow via hole in said hole, and forming said second copper conductor including said copper plug over said barrier layer, said copper plug filling said narrow via hole.
Claim 2
Independent Claim
172 words
A method of forming a via contact between a first copper conductor and a second copper conductor in a thin film electronic device with a copper plug interconnecting said first copper conductor and said second copper conductor comprising: forming a stop layer over said first copper conductor, forming a dielectric layer over said stop layer, patterning said dielectric layer and said etch stop layer to etch a hole therethrough down into first copper conductor leaving an exposed surface of said first copper conductor and exposed sidewalls of said dielectric layer and said etch stop layer, growing a copper germanium thin film at the base of said hole on the exposed surface of said first copper conductor, forming a barrier layer over, as follows: a) said copper germanium thin film, b) said dielectric layer, and c) said first copper conductor, said barrier layer forming a narrow via hole in said hole, and forming said second copper conductor including said copper plug over said barrier layer, said copper plug filling said narrow via hole.
Claim 3
Dependent Claim
23 words
The method of claim 1, wherein: said device is exposed to in situ germane GeH 4 gas to form said copper germanium film.
Claim 4
Dependent Claim
43 words
The method of claim 1, wherein: said device is exposed to in situ germane GeH 4 gas at a temperature from about 200° C. to about 400° C. to form a copper germanide (Cu 3 Ge) compound, as a thin film adhesion layer.
Claim 5
Dependent Claim
49 words
The method of claim 1, wherein: said device is exposed to in situ germane GeH 4 gas to form said copper germanium film, and said barrier layer comprises a metal selected from the group consisting of tantalum, (Ta), TaN, Ta/TaN, Ta/TaN/Ta, TaN/Ta, TiN, WN 4 , and W (tungsten).
Claim 6
Dependent Claim
89 words
The method of claim 1, wherein said device is exposed to in situ germane GeH 4 gas at a temperature from about 200° C. to about 400° C., in an atmosphere of hydrogen/helium (H 2 /He) gases at a temperature from about 200° C. to about 400° C. to form a copper germanide (Cu 3 Ge) compound, as a thin film adhesion layer, and said barrier layer comprises a metal selected from the group consisting of tantalum, (Ta), TaN, Ta/TaN, Ta/TaN/Ta, TaN/Ta, TiN, WN 4 , and W (tungsten).
Claim 7
Independent Claim
194 words
A method of forming a via contact between a first copper conductor and a second copper conductor in a thin film electronic device with a copper plug interconnecting said first copper conductor and said second copper conductor comprising: forming a stop layer over said first copper conductor, forming a dielectric layer over said stop layer, patterning said dielectric layer and said etch stop layer to etch a hole therethrough with a dry plasma etch down into first copper conductor leaving an exposed surface of said first copper conductor and exposed sidewalls of said dielectric layer and said etch stop layer, growing a copper germanide (Cu 3 Ge) compound, thin film at the base of said hole on the exposed surface of said first copper conductor from in situ exposure to germane GeH 4 gas, forming a barrier layer over, as follows: a) said copper germanide (Cu 3 Ge) compound, thin film, b) said dielectric layer and c) said first copper conductor, said barrier layer forming a narrow via hole in said hole, and forming said second copper conductor including said copper plug over said barrier layer, said copper plug filling said narrow via hole.
Claim 8
Independent Claim
194 words
A method of forming a via contact between a first copper conductor and a second copper conductor in a thin film electronic device with a copper plug interconnecting said first copper conductor and said second copper conductor comprising: forming a stop layer over said first copper conductor, forming a dielectric layer over said stop layer, patterning said dielectric layer and said etch stop layer to etch a hole therethrough with a dry plasma etch down into first copper conductor leaving an exposed surface of said first copper conductor and exposed sidewalls of said dielectric layer and said etch stop layer, growing a copper germanide (Cu 3 Ge) compound, thin film at the base of said hole on the exposed surface of said first copper conductor from in situ exposure to germane GeH 4 gas, forming a barrier layer over, as follows: a) said copper germanide (Cu 3 Ge) compound, thin film, b) said dielectric layer and c) said first copper conductor, said barrier layer forming a narrow via hole in said hole, and forming said second copper conductor including said copper plug over said barrier layer, said copper plug filling said narrow via hole.
Claim 9
Dependent Claim
23 words
The method of claim 6, wherein: said device is exposed to in situ germane GeH 4 gas to form said copper germanide film.
Claim 10
Dependent Claim
43 words
The method of claim 6, wherein: said device is exposed to in situ germane GeH 4 gas at a temperature from about 200° C. to about 400° C. to form a copper germanide (Cu 3 Ge) compound, as a thin film adhesion layer.
Claim 11
Dependent Claim
49 words
The method of claim 6, wherein: said device is exposed to in situ germane GeH 4 gas to form said copper germanide film, and said barrier layer comprises a metal selected from the group consisting of tantalum, (Ta), TaN, Ta/TaN, Ta/TaN/Ta, TaN/Ta, TiN, WN 4 , and W (tungsten).
Claim 12
Dependent Claim
79 words
The method of claim 6, wherein said device is exposed to in situ to germane GeH 4 gas at a temperature from about 200° C. to about 400° C., in an atmosphere of hydrogen/helium (H 2 /He) gases to form a copper germanide (Cu 3 Ge) compound, as a thin film adhesion layer, and said barrier layer comprises a metal selected from the group consisting of tantalum, (Ta), TaN, Ta/TaN, Ta/TaN/Ta, TaN/Ta, TiN, WN 4 , and W (tungsten).
Claim 13
Dependent Claim
142 words
A via contact between a first copper conductor and a second copper conductor in a thin film electronic device with a copper plug interconnecting said first copper conductor and said second copper conductor comprising: a stop layer over said first copper conductor, a dielectric layer over said stop layer, a hole through said dielectric layer and said etch stop layer down into first copper conductor with a copper germanium thin film at the base of said hole on the exposed surface of said first copper conductor, a barrier layer formed over, as follows: a) said copper germanium thin film, b) said dielectric layer, and c) said first copper conductor, said barrier layer forming a narrow via hole in said hole, and said second copper conductor including said copper plug over said barrier layer, and said copper plug filling said narrow via hole.
Claim 14
Dependent Claim
142 words
A via contact between a first copper conductor and a second copper conductor in a thin film electronic device with a copper plug interconnecting said first copper conductor and said second copper conductor comprising: a stop layer over said first copper conductor, a dielectric layer over said stop layer, a hole through said dielectric layer and said etch stop layer down into first copper conductor with a copper germanium thin film at the base of said hole on the exposed surface of said first copper conductor, a barrier layer formed over, as follows: a) said copper germanium thin film, b) said dielectric layer, and c) said first copper conductor, said barrier layer forming a narrow via hole in said hole, and said second copper conductor including said copper plug over said barrier layer, and said copper plug filling said narrow via hole.
Claim 15
Dependent Claim
25 words
The device of claim 11, wherein: said copper germanium thin film comprises a copper germanide (Cu 3 Ge) compound, as a thin film adhesion layer.
Claim 16
Dependent Claim
51 words
The device of claim 11, wherein: said copper germanium thin film comprises a copper germanide (Cu 3 Ge) compound, as a thin film adhesion layer, and said barrier layer comprises a metal selected from the group consisting of tantalum, (Ta), TaN, Ta/TaN, Ta/TaN/Ta, TaN/Ta, TiN, WN 4 , and W (tungsten).
Claim 17
Dependent Claim
158 words
A via contact between a first copper conductor and a second copper conductor in a thin film electronic device with a copper plug interconnecting said first copper conductor and said second copper conductor comprising: a stop layer over said first copper conductor, a dielectric layer over said stop layer, a hole through said dielectric layer and said etch stop layer down into first copper conductor leaving an exposed surface of said first copper conductor with a copper germanide (Cu 3 Ge) compound, thin film at the base of said hole on the exposed surface of said first copper conductor, a barrier layer formed over, as follows: a) said copper germanide (Cu 3 Ge) compound, thin film, b) said dielectric layer, and c) said first copper conductor, said barrier layer forming a narrow via hole in said hole, and said second copper conductor including said copper plug over said barrier layer, said copper plug filling said narrow via hole.
Claim 18
Dependent Claim
158 words
A via contact between a first copper conductor and a second copper conductor in a thin film electronic device with a copper plug interconnecting said first copper conductor and said second copper conductor comprising: a stop layer over said first copper conductor, a dielectric layer over said stop layer, a hole through said dielectric layer and said etch stop layer down into first copper conductor leaving an exposed surface of said first copper conductor with a copper germanide (Cu 3 Ge) compound, thin film at the base of said hole on the exposed surface of said first copper conductor, a barrier layer formed over, as follows: a) said copper germanide (Cu 3 Ge) compound, thin film, b) said dielectric layer, and c) said first copper conductor, said barrier layer forming a narrow via hole in said hole, and said second copper conductor including said copper plug over said barrier layer, said copper plug filling said narrow via hole.
Claim 19
Dependent Claim
52 words
The device of claim 14, wherein: said copper germanium thin film comprises a copper germanide (Cu 3 Ge) compound, formed as a thin film adhesion layer, and said barrier layer comprises a metal selected from the group consisting of tantalum, (Ta), TaN, Ta/TaN, Ta/TaN/Ta, TaN/Ta, TiN, WN 4 , and W (tungsten).
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-11-07 | 2004-05-08 | 2004-11-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-11-07 | 2008-05-08 | 2008-11-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-11-07 | 2012-05-08 | 2012-11-07 | $7700.00 | Window Closed / Lapsed |