US6140667A
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Semiconductor thin film in semiconductor device having grain boundaries
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1998-02-20
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Granted: 2000-10-31
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Expires: 2018-02-20
Abstract
Abstract To provide a semiconductor device having a function equivalent to that of IGFET, an activation layer is formed by a crystal silicon film crystallized by using a catalyst element helping promote crystallization and a heating treatment is carried out in an atmosphere including a halogen element by which the catalyst element is removed, the activation layer processed by such steps is constituted by a peculiar crystal structure and according to the crystal structure, a rate of incommensurate bonds in respect of all of bonds at grain boundaries is 5% or less (preferably, 3% or less).
Inventors
- 👤 Shunpei Yamazaki
- 👤 Hisashi Ohtani
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 19:33
CPC Classifications
H; H01; H01H; H01H15/00; H01H15/02; H01H15/06; H10; H10P; H10P14/00; H10P14/20; H10P14/38; H10P14/3802; H10P14/3806; B; B60; B60N; B60N2/00; B60N2/02; B60N2/04; B60N2/06; B60N2/07; H01H13/00; H01H13/02; H01H13/12; H01H13/14; H01H13/26; H01H13/36; H01H15/10; H01H15/16; H10D; H10D62/00; H10D62/40; H10D86/00; H10D86/01; H10D86/021; H10D86/0221; H10D86/0223; H10D86/0225; G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/1333; G02F1/1345; G02F1/13454; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2921; H10P14/32; H10P14/3202; H10P14/3238; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
38 words
A semiconductor thin film comprising: at least two crystals; grain boundaries among the crystals; and wherein a rate of incommensurate bonds in respect of all of bonds at the grain boundaries is equal to or smaller than 5%.
Claim 2
Dependent Claim
38 words
A semiconductor thin film comprising: at least two crystals; grain boundaries among the crystals; and wherein a rate of incommensurate bonds in respect of all of bonds at the grain boundaries is equal to or smaller than 5%.
Claim 3
Dependent Claim
16 words
A film according to claim 1, wherein a major component element constituting the crystal is silicon.
Claim 4
Dependent Claim
43 words
A semiconductor thin film comprising: at least two crystals; grain boundaries among the crystals; and wherein a number of incommensurate bonds included in 100 of bonds is equal to or smaller than 5 at least in one arbitrary region of the grain boundaries.
Claim 5
Dependent Claim
43 words
A semiconductor thin film comprising: at least two crystals; grain boundaries among the crystals; and wherein a number of incommensurate bonds included in 100 of bonds is equal to or smaller than 5 at least in one arbitrary region of the grain boundaries.
Claim 6
Dependent Claim
16 words
A film according to claim 3, wherein a major component element constituting the crystal is silicon.
Claim 7
Dependent Claim
38 words
A semiconductor thin film comprising: at least two crystals; grain boundaries among the crystals; and wherein a number of incommensurate bonds included in 50 of bonds is null at least in one arbitrary region of the grain boundaries.
Claim 8
Dependent Claim
38 words
A semiconductor thin film comprising: at least two crystals; grain boundaries among the crystals; and wherein a number of incommensurate bonds included in 50 of bonds is null at least in one arbitrary region of the grain boundaries.
Claim 9
Dependent Claim
16 words
A film according to claim 5, wherein a major component element constituting the crystal is silicon.
Claim 10
Dependent Claim
55 words
A semiconductor thin film comprising: at least two crystals; grain boundaries among the crystals; and an angle made by a lattice striation observed in one arbitrary crystal of the at least two crystals and a lattice striation observed in other crystal contiguous to the one arbitrary crystal falls in a range of 60 through 80°.
Claim 11
Dependent Claim
55 words
A semiconductor thin film comprising: at least two crystals; grain boundaries among the crystals; and an angle made by a lattice striation observed in one arbitrary crystal of the at least two crystals and a lattice striation observed in other crystal contiguous to the one arbitrary crystal falls in a range of 60 through 80°.
Claim 12
Dependent Claim
16 words
A film according to claim 7, wherein a major component element constituting the crystal is silicon.
Claim 13
Dependent Claim
76 words
A semiconductor device which is an insulated gate type semiconductor device having at least an activation layer formed on a substrate having an insulating surface, a gate insulating film and a gate electrode: wherein a semiconductor thin film constituting the activation layer comprises at least two crystals and grain boundaries among the crystals and a rate of incommensurate bonds in respect of all of bonds in the grain boundaries is equal to or smaller than 5%.
Claim 14
Dependent Claim
76 words
A semiconductor device which is an insulated gate type semiconductor device having at least an activation layer formed on a substrate having an insulating surface, a gate insulating film and a gate electrode: wherein a semiconductor thin film constituting the activation layer comprises at least two crystals and grain boundaries among the crystals and a rate of incommensurate bonds in respect of all of bonds in the grain boundaries is equal to or smaller than 5%.
Claim 15
Dependent Claim
16 words
A device according to claim 9, wherein a major component element constituting the crystal is silicon.
Claim 16
Dependent Claim
81 words
A semiconductor device which is an insulated gate type semiconductor device comprising at least an activation layer formed on a substrate having an insulating surface, a gate insulating film and a gate electrode: wherein a semiconductor thin film constituting the activation layer comprises at least two crystals and grain boundaries among the crystals and a number of incommensurate bonds included in 100 of bonds is equal to or smaller than 5 at least in one arbitrary region of the grain boundaries.
Claim 17
Dependent Claim
81 words
A semiconductor device which is an insulated gate type semiconductor device comprising at least an activation layer formed on a substrate having an insulating surface, a gate insulating film and a gate electrode: wherein a semiconductor thin film constituting the activation layer comprises at least two crystals and grain boundaries among the crystals and a number of incommensurate bonds included in 100 of bonds is equal to or smaller than 5 at least in one arbitrary region of the grain boundaries.
Claim 18
Dependent Claim
16 words
A device according to claim 11, wherein a major component element constituting the crystal is silicon.
Claim 19
Dependent Claim
76 words
A semiconductor device which is an insulated gate type semiconductor device comprising at least an activation layer formed on a substrate having an insulating surface, a gate insulating film and a gate electrode: wherein a semiconductor thin film constituting the activation layer comprises at least two crystals and grain boundaries among the crystals and a number of incommensurate bonds included in 50 of bonds is null at least in one arbitrary region of the grain boundaries.
Claim 20
Dependent Claim
76 words
A semiconductor device which is an insulated gate type semiconductor device comprising at least an activation layer formed on a substrate having an insulating surface, a gate insulating film and a gate electrode: wherein a semiconductor thin film constituting the activation layer comprises at least two crystals and grain boundaries among the crystals and a number of incommensurate bonds included in 50 of bonds is null at least in one arbitrary region of the grain boundaries.
Claim 21
Dependent Claim
16 words
A device according to claim 13, wherein a major component element constituting the crystal is silicon.
Claim 22
Dependent Claim
94 words
A semiconductor device which is an insulated gate type semiconductor device comprising at least an activation layer formed on a substrate having an insulating surface, a gate insulating film and a gate electrode: wherein a semiconductor thin film constituting the activation layer comprises at least two crystals and grain boundaries among the crystals and an angle made by a lattice striation observed in one arbitrary crystal of the at least two crystals and a lattice striation observed in other crystals contiguous to the one arbitrary crystal falls in a range of 60 through 80°.
Claim 23
Dependent Claim
94 words
A semiconductor device which is an insulated gate type semiconductor device comprising at least an activation layer formed on a substrate having an insulating surface, a gate insulating film and a gate electrode: wherein a semiconductor thin film constituting the activation layer comprises at least two crystals and grain boundaries among the crystals and an angle made by a lattice striation observed in one arbitrary crystal of the at least two crystals and a lattice striation observed in other crystals contiguous to the one arbitrary crystal falls in a range of 60 through 80°.
Claim 24
Dependent Claim
16 words
A device according to claim 15, wherein a major component element constituting the crystal is silicon.
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