US6133065A
Expired / Lapsed
US
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Multi-chip module employing carrier substrate with micromachined alignment structures and method of forming
Assignee: Micron Technology Inc
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Filing: 1998-01-16
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Granted: 2000-10-17
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Expires: 2018-01-16
Abstract
Abstract A micromachined insulative carrier substrate preferably formed of silicon and a multi-chip module formed from the micromachined substrate. The micromachined substrate is fabricated by forming mesas across the surface of the substrate, forming an insulating layer on the substrate, and forming conductive traces on the insulating layer to route signals between semiconductor dice and/or to external circuitry. A variety of semiconductor dice and/or integrated circuitry-bearing wafer configurations (collectively, "semiconductor elements") may be attached to the semiconductor substrate. Electrical contact between the carrier substrate and semiconductor element is achieved with conductive connectors formed on either the semiconductor element or the carrier substrate. The conductive connectors each preferably make contact with both a portion of the conductive trace extending down the sidewall of the mesa and a portion of the conductive trace on the substrate between the mesas to form a more effective bond. The present invention also includes a stacked configuration. After attachment of semiconductor elements, the carrier substrates can be stacked to form a high density stacked configuration.
Inventors
- 👤 Salman Akram
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 14:29
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/60; H10W70/67; H10W70/68; H10W72/00; H10W72/071; H10W72/072; H10W72/07221; H10W72/07227; H10W72/07231; H10W72/07236; H10W72/20; H10W72/251; H10W72/252; H10W72/281; H10W72/285; H10W72/50; H10W72/531; H10W72/536; H10W72/90; H10W72/941; H10W72/9415; H10W90/00; H10W90/701; H10W90/721; H10W90/724
Claims Analysis
Total Claims: 36
Claim 1
Independent Claim
173 words
A method for producing a semiconductor carrier substrate, comprising: providing a carrier substrate having a layer of semiconductor material with a substantially planar surface; forming at least one elongated mesa of semiconductor material defined by sidewalls extending upwardly to a top from at least one substrate plane of semiconductor material below said at least one elongated mesa by selectively removing material from said substantially planar surface of said layer of semiconductor material to a depth less than a thickness of the layer of semiconductor material; substantially simultaneously forming an insulating layer over said at least one substrate plane and said top and sidewalls of said at least one elongated mesa; and forming conductive traces on said insulating layer including mutually laterally spaced, substantially linear conductive trace segments oriented transversely to said at least one elongated mesa, said mutually laterally spaced, substantially linear conductive trace segments of said conductive traces each extending over at least one of said sidewalls of said at least one elongated mesa and onto said at least one substrate plane.
Claim 2
Independent Claim
173 words
A method for producing a semiconductor carrier substrate, comprising: providing a carrier substrate having a layer of semiconductor material with a substantially planar surface; forming at least one elongated mesa of semiconductor material defined by sidewalls extending upwardly to a top from at least one substrate plane of semiconductor material below said at least one elongated mesa by selectively removing material from said substantially planar surface of said layer of semiconductor material to a depth less than a thickness of the layer of semiconductor material; substantially simultaneously forming an insulating layer over said at least one substrate plane and said top and sidewalls of said at least one elongated mesa; and forming conductive traces on said insulating layer including mutually laterally spaced, substantially linear conductive trace segments oriented transversely to said at least one elongated mesa, said mutually laterally spaced, substantially linear conductive trace segments of said conductive traces each extending over at least one of said sidewalls of said at least one elongated mesa and onto said at least one substrate plane.
Claim 3
Dependent Claim
23 words
The method of claim 1, further including selecting said carrier substrate from a group consisting of monocrystalline silicon, silicon-on-glass, silicon-on-sapphire, germanium, and ceramic.
Claim 4
Dependent Claim
79 words
The method of claim 1, wherein forming said at least one elongated mesa comprises: forming a mask layer over said substantially planar surface of said layer of semiconductor material; removing a portion of said mask layer to expose areas of said substantially planar surface of said layer of semiconductor material; and etching said exposed substantially planar surface areas of said layer of substrate material to form said at least one elongated mesa and said at least one substrate plane.
Claim 5
Dependent Claim
17 words
The method of claim 3, further including forming said mask layer at least partially of silicon nitride.
Claim 6
Dependent Claim
26 words
The method of claim 3, wherein the etching said exposed substantially planar surface areas of said layer of semiconductor material includes performing a wet anisotropic etch.
Claim 7
Dependent Claim
14 words
The method of claim 1, further including forming said insulating layer of silicon dioxide.
Claim 8
Dependent Claim
15 words
The method of claim 1, further including forming said conductive traces of at least copper.
Claim 9
Dependent Claim
30 words
The method of claim 1, wherein the forming said conductive traces comprises: depositing a conductive material layer on said insulating layer; and selectively removing portions of said conductive material layer.
Claim 10
Dependent Claim
15 words
The method of claim 8, further including forming said conductive traces of at least copper.
Claim 11
Dependent Claim
43 words
The method of claim 9, wherein the forming said conductive traces further includes: depositing a layer of chrome on said insulating layer; depositing a layer of copper/chrome alloy on said chrome layer; and depositing a layer of copper on said copper/chrome alloy layer.
Claim 12
Dependent Claim
23 words
The method of claim 1, wherein the forming said conductive traces comprises depositing a conductive paste on said insulating layer by silk screening.
Claim 13
Dependent Claim
20 words
The method of claim 1, wherein the forming said conductive traces comprises extruding a conductive paste on said insulating layer.
Claim 14
Dependent Claim
39 words
The method of claim 1, wherein the forming said conductive traces comprises: depositing a second insulating layer on said insulating layer; etching through said second insulating layer to form a trough; and filling said trough with a conductive material.
Claim 15
Dependent Claim
35 words
The method of claim 1, further including: applying a passivation layer over said insulating layer and said conductive traces; and selectively removing portions of said passivation layer to expose contact areas on the conductive traces.
Claim 16
Independent Claim
276 words
A method for producing a semiconductor device, comprising the steps of: providing a carrier substrate including a layer of material exhibiting a face surface; performing at least one elongated mesa with sidewalls extending upwardly to a top from at least one base substrate plane below said at least one elongated mesa by removing said layer of material from said face surface to a depth less than a thickness of said layer of material; substantially simultaneously forming an insulating layer extending over said top and sidewalls of said at least one elongated mesa and said at least one base substrate plane; forming a plurality of elongated conductive traces on said insulating layer including mutually laterally spaced, substantially linear conductive trace segments oriented transversely to said at least one elongated mesa, said mutually laterally spaced, substantially linear conductive trace segments of said plurality of elongated conductive traces each extends over at least a portion of one of said sidewalls and over a portion of said at least one base substrate plane adjacent said one of said sidewalls; providing at least one semiconductor element having at least one conductive connector protruding therefrom; and forming an electrical connection between said at least one semiconductor element and said at least one of said plurality of elongated conductive traces through said at least one conductive connector by contacting a first area of said at least one of said plurality of elongated conductive trace on said at least a portion of one of said sidewalls and a second area of said at least one of said plurality of elongated conductive trace extending over said adjacent portion of at least one base substrate plane.
Claim 17
Independent Claim
276 words
A method for producing a semiconductor device, comprising the steps of: providing a carrier substrate including a layer of material exhibiting a face surface; performing at least one elongated mesa with sidewalls extending upwardly to a top from at least one base substrate plane below said at least one elongated mesa by removing said layer of material from said face surface to a depth less than a thickness of said layer of material; substantially simultaneously forming an insulating layer extending over said top and sidewalls of said at least one elongated mesa and said at least one base substrate plane; forming a plurality of elongated conductive traces on said insulating layer including mutually laterally spaced, substantially linear conductive trace segments oriented transversely to said at least one elongated mesa, said mutually laterally spaced, substantially linear conductive trace segments of said plurality of elongated conductive traces each extends over at least a portion of one of said sidewalls and over a portion of said at least one base substrate plane adjacent said one of said sidewalls; providing at least one semiconductor element having at least one conductive connector protruding therefrom; and forming an electrical connection between said at least one semiconductor element and said at least one of said plurality of elongated conductive traces through said at least one conductive connector by contacting a first area of said at least one of said plurality of elongated conductive trace on said at least a portion of one of said sidewalls and a second area of said at least one of said plurality of elongated conductive trace extending over said adjacent portion of at least one base substrate plane.
Claim 18
Dependent Claim
23 words
The method of claim 15, further comprising selecting said carrier substrate from a group consisting of monocrystalline silicon, silicon-on-glass, silicon-on-sapphire, germanium, and ceramic.
Claim 19
Dependent Claim
67 words
The method of claim 15, wherein forming said at least one elongated mesa comprises: forming a mask layer over said face surface of said material layer; removing a portion of said mask layer to expose areas of said face surface of said material layer; and etching said exposed face surface areas to form said at least one elongated mesa and said at least one base substrate plane.
Claim 20
Dependent Claim
17 words
The method of claim 17, further comprising forming said mask layer at least partially from silicon nitride.
Claim 21
Dependent Claim
19 words
The method of claim 17, wherein the etching said exposed face surface areas includes performing a wet anisotropic etch.
Claim 22
Dependent Claim
17 words
The method of claim 15, further comprising forming said insulating layer at least partially from silicon dioxide.
Claim 23
Dependent Claim
19 words
The method of claim 15, further comprising forming said plurality of elongated conductive traces at least partially from copper.
Claim 24
Dependent Claim
33 words
The method of claim 15, wherein the forming said plurality of elongated conductive traces comprises: depositing a conductive material layer on said insulating layer; and selectively removing portions of said conductive material layer.
Claim 25
Dependent Claim
19 words
The method of claim 22, further comprising forming said plurality of elongated conductive traces at least partially from copper.
Claim 26
Dependent Claim
46 words
The method of claim 23, wherein the forming said plurality of elongated conductive traces further includes: depositing a layer of chrome on said insulating layer; depositing a layer of copper/chrome alloy on said chrome layer; and depositing a layer of copper on said copper/chrome alloy layer.
Claim 27
Dependent Claim
26 words
The method of claim 15, wherein the forming said plurality of elongated conductive traces comprises depositing a conductive paste on said insulating layer by silk screening.
Claim 28
Dependent Claim
23 words
The method of claim 15, wherein the forming said plurality of elongated conductive traces comprises extruding a conductive paste on said insulating layer.
Claim 29
Dependent Claim
42 words
The method of claim 15, wherein the forming said plurality of elongated conductive traces comprises: depositing a second insulating layer on said insulating layer; etching through said second insulating layer to form a trough; and filling said trough with a conductive material.
Claim 30
Dependent Claim
41 words
The method of claim 15, further including: applying a passivation layer over said insulating layer and said plurality of elongated conductive traces; and selectively removing portions of said passivation layer to expose contact areas on the plurality of elongated conductive traces.
Claim 31
Dependent Claim
18 words
The method of claim 15, further comprising forming said at least one semiconductor element as a semiconductor chip.
Claim 32
Dependent Claim
25 words
The method of claim 15, further comprising forming each of said carrier substrate and said at least one semiconductor element from an entire silicon wafer.
Claim 33
Dependent Claim
142 words
The method of claim 15, wherein said at least one conductive connector comprises a plurality of conductive connectors, wherein said plurality of elongated conductive traces each extends over at least a portion of one of said sidewalls and over an adjacent portion of said at least one base substrate plane and further comprising forming a plurality of electrical connections between said at least one semiconductor element and said plurality of elongated conductive traces through said plurality of conductive connectors by contacting each of said plurality of elongated conductive traces with at least one conductive connector at a first area of a conductive trace on said at least a portion of one of said sidewalls and a second area of said at least one of said plurality of elongated conductive traces extending over said adjacent portion of at least one base substrate plane.
Claim 34
Dependent Claim
189 words
The method of claim 15, wherein the forming said at least one elongated mesa comprises forming at least two adjacent elongated mesas, and further comprising forming at least one elongated conductive trace extending over at least a portion of one of said elongated mesa sidewalls of a first elongated mesa, over an adjacent portion of said at least one base substrate plane, and over at least a portion of an elongated mesa sidewall of a second, adjacent elongated mesa, and causing said at least one conductive connector to electrically contact said at least one of said plurality of elongated conductive trace on a first area of said at least one of said plurality of elongated conductive trace over said at least a portion said one of said elongated mesa sidewalls of said first elongated mesa, on a second area of said at least one of said plurality of elongated conductive traces over said at least one base substrate plane, and on a third area of said at least one elongated conductive trace over said at least a portion of said elongated mesa sidewall of said second, adjacent elongated mesa.
Claim 35
Dependent Claim
20 words
The method of claim 15, further comprising forming said at least one conductive connector as a ball of reflowable material.
Claim 36
Dependent Claim
15 words
The method of claim 33, further comprising forming said reflowable material as a lead/tin alloy.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-10-17 | 2004-04-17 | 2004-10-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-10-17 | 2008-04-17 | 2008-10-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-10-17 | 2012-04-17 | 2012-10-17 | $7700.00 | Window Closed / Lapsed |