Patent US2079981A successfully refreshed from Google Patents.
US4290079A
Expired / Lapsed
US
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Improved solder interconnection between a semiconductor device and a supporting substrate
Assignee: International Business Machines Corp
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Filing: 1979-06-29
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Granted: 1981-09-15
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Expires: 1999-06-29
Abstract
Abstract A ball limiting metallurgy pad structure for a semiconductor device solder bond interconnection comprising: a conductive layer that is adherent to the semiconductor device passivating layer, a relatively thick layer of a material having a high thermal conductivity, a barrier layer that protects the high conductivity layer by physically preventing any interaction or alloying with the subsequent layers, and a layer of a material that is solder wettable.
Inventors
- 👤 Charles Carpenter
- 👤 Joseph F. Fugardi
- 👤 Lawrence V. Gregor
- 👤 Peter S. Grosewald
- 👤 Morton D. Reeber
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 17:33
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/01; H10W72/012; H10W20/00; H10W20/40; H10W20/41; H10W20/425; H10W20/44; H10W20/4403; B; B23; B23K; B23K35/00; B23K35/001; B23K2035/008; H10W72/019; H10W72/20; H10W72/251; H10W72/90; H10W72/921; H10W72/923; H10W72/951; H10W72/952
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
46 words
An improved ball limiting metallurgy pad structure for a solder interconnection for a semiconductor device comprising, a first layer of chromium, a phased layer of chromium-copper, a first layer of copper, a phased layer of chromium-copper, a second layer of copper, a surface layer of gold.
Claim 2
Dependent Claim
46 words
An improved ball limiting metallurgy pad structure for a solder interconnection for a semiconductor device comprising, a first layer of chromium, a phased layer of chromium-copper, a first layer of copper, a phased layer of chromium-copper, a second layer of copper, a surface layer of gold.
Claim 3
Dependent Claim
26 words
The ball limiting metallurgy pad structure of claim 1 wherein said first layer of copper has a thickness in the range of 5000 to 10,000 angstroms.
Claim 4
Dependent Claim
144 words
The ball limiting metallurgy pad structure for a semiconductor device solder bond interconnection that is made from electrically conductive materials consisting of: an adherent layer formed of chromium that will bond to the passivating layer of a semiconductor device a relatively thick layer of high thermal conductivity metal bonded to said chromium layer a barrier layer formed of a metal that protects said high conductivity metal layer by physically preventing any interaction or alloying with overlying layers a layer that is formed of a solder wettable metal a surface protective layer said layer of high thermal conductivity metal, when said pad structure is joined to a substrate with a solder connection, capable of reducing the radial thermal gradient within said interconnection, said barrier layer preventing dissolution and interaction of said layer of high thermal conductivity metal with the molten solder during the joining operation.
Claim 5
Dependent Claim
144 words
The ball limiting metallurgy pad structure for a semiconductor device solder bond interconnection that is made from electrically conductive materials consisting of: an adherent layer formed of chromium that will bond to the passivating layer of a semiconductor device a relatively thick layer of high thermal conductivity metal bonded to said chromium layer a barrier layer formed of a metal that protects said high conductivity metal layer by physically preventing any interaction or alloying with overlying layers a layer that is formed of a solder wettable metal a surface protective layer said layer of high thermal conductivity metal, when said pad structure is joined to a substrate with a solder connection, capable of reducing the radial thermal gradient within said interconnection, said barrier layer preventing dissolution and interaction of said layer of high thermal conductivity metal with the molten solder during the joining operation.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-09-14 | 1985-03-16 | 1985-09-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-09-14 | 1989-03-16 | 1989-09-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-09-14 | 1993-03-16 | 1993-09-15 | $7700.00 | Window Closed / Lapsed |