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US6130160A
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Methods, complexes and system for forming metal-containing films
Assignee: Micron Technology Inc
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Filing: 1998-04-20
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Granted: 2000-10-10
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Expires: 2018-04-20
Abstract
Abstract A method of forming a film on a substrate using Group IIIA metal complexes. The complexes and methods are particularly suitable for the preparation of semiconductor structures using chemical vapor deposition techniques and systems.
Inventors
- 👤 Brian A. Vaartstra
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:07
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/301; C07; C07F; C07F5/00; C07F5/06; C07F5/061; C07F5/065; C07F5/066; C23C16/06; C23C16/18; H; H10; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056
Claims Analysis
Total Claims: 37
Claim 1
Independent Claim
134 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly; providing a precursor comprising one or more complexes of the formulas: ##STR4## wherein: M is a Group IIIA metal, each R 1 , R 2 , R 3 , R 4 and R 5 group is independently H or a (C 1 -C 30 )organic group, wherein optionally R 3 and R 4 are joined to form a ring or rings with the metal and none of the other R groups are joined together to form ring systems; and n=1 to 6; and forming a metal-containing film from the precursor on a surface of the semiconductor substrate or substrate assembly; wherein the metal-containing film is a Group IIIA metal film or a Group IIIA metal alloy film.
Claim 2
Independent Claim
134 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly; providing a precursor comprising one or more complexes of the formulas: ##STR4## wherein: M is a Group IIIA metal, each R 1 , R 2 , R 3 , R 4 and R 5 group is independently H or a (C 1 -C 30 )organic group, wherein optionally R 3 and R 4 are joined to form a ring or rings with the metal and none of the other R groups are joined together to form ring systems; and n=1 to 6; and forming a metal-containing film from the precursor on a surface of the semiconductor substrate or substrate assembly; wherein the metal-containing film is a Group IIIA metal film or a Group IIIA metal alloy film.
Claim 3
Dependent Claim
39 words
The method of claim 1 wherein the step of forming a metal-containing film comprises vaporizing the precursor to form vaporized precursor and directing the vaporized precursor toward the semiconductor substrate or substrate assembly using a chemical vapor deposition technique.
Claim 4
Dependent Claim
20 words
The method of claim 2 wherein the chemical vapor deposition technique comprises flash vaporization, bubbling, microdroplet formation, or combinations thereof.
Claim 5
Dependent Claim
13 words
The method of claim 1 wherein the semiconductor substrate is a silicon wafer.
Claim 6
Dependent Claim
18 words
The method of claim 1 wherein M is selected from the group consisting of Al, Ga, and In.
Claim 7
Dependent Claim
17 words
The method of claim 1 wherein at least one of R 3 and R 4 is H.
Claim 8
Independent Claim
34 words
The method of claim l wherein each R 1 , R 2 , R 3 , R 4 , and R 5 group is independently H or a (C 1 -C 20 )organic group.
Claim 9
Dependent Claim
34 words
The method of claim 1 wherein each R 1 , R 2 , R 3 , R 4 , and R 5 group is independently H or a (C 1 -C 4 )alkyl moiety.
Claim 10
Dependent Claim
11 words
The method of claim 1 wherein the precursor is a liquid.
Claim 11
Dependent Claim
20 words
The method of claim 9 wherein the liquid precursor comprises one or more solid complexes dissolved in a liquid medium.
Claim 12
Independent Claim
116 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly; providing a precursor comprising one or more hydride complexes of the formulas: ##STR5## wherein: M is a Group IIIA metal; each R 1 , R 2 , R 3 , R 4 , and R 5 group is independently H or a (C 1 -C 30 )organic group, wherein none of the R groups are joined together to form ring systems, at least one of R 3 and R 4 is H, and R 5 is H; and n=1 to 6; forming a metal containing film from the precursor on a surface of the semiconductor substrate or substrate assembly.
Claim 13
Independent Claim
116 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly; providing a precursor comprising one or more hydride complexes of the formulas: ##STR5## wherein: M is a Group IIIA metal; each R 1 , R 2 , R 3 , R 4 , and R 5 group is independently H or a (C 1 -C 30 )organic group, wherein none of the R groups are joined together to form ring systems, at least one of R 3 and R 4 is H, and R 5 is H; and n=1 to 6; forming a metal containing film from the precursor on a surface of the semiconductor substrate or substrate assembly.
Claim 14
Dependent Claim
39 words
The method of claim 11 wherein the step of forming a metal-containing film comprises vaporizing the precursor to form vaporized precursor and directing the vaporized precursor toward the semiconductor substrate or substrate assembly using a chemical vapor deposition technique.
Claim 15
Dependent Claim
26 words
The method of claim 12 wherein the precursor is vaporized and/or directed toward the semiconductor substrate or substrate assembly in the presence of a carrier gas.
Claim 16
Dependent Claim
26 words
The method of claim 12 wherein the precursor is vaporized and/or directed toward the semiconductor substrate or substrate assembly in the presence of a reaction gas.
Claim 17
Dependent Claim
19 words
The method of claim 11 wherein the precursor further comprises one or more compounds containing a Group VA element.
Claim 18
Dependent Claim
11 words
The method of claim 11 wherein the precursor is a liquid.
Claim 19
Dependent Claim
15 words
The method of claim 11 wherein the metal-containing film is a Group IIIA metal film.
Claim 20
Dependent Claim
16 words
The method of claim 11 wherein the metal-containing film is a Group IIIA metal alloy film.
Claim 21
Independent Claim
135 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly; providing a liquid precursor comprising one or more hydride complexes of the formulas: ##STR6## wherein: M is a Group IIIA metal; each R 1 , R 2 , R 3 , R 4 , and R 5 group is independently H or a (C 1 -C 30 ) organic group, wherein none of the R groups are joined together to form ring systems, at least one of R 3 and R 4 is H, and R 5 is H; and n=1 to 6; vaporizing the liquid precursor to form vaporized precursor; and directing the vaporized precursor toward the semiconductor substrate or substrate assembly to form a metal-containing thin on a surface of the semiconductor substrate or substrate assembly.
Claim 22
Independent Claim
135 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly; providing a liquid precursor comprising one or more hydride complexes of the formulas: ##STR6## wherein: M is a Group IIIA metal; each R 1 , R 2 , R 3 , R 4 , and R 5 group is independently H or a (C 1 -C 30 ) organic group, wherein none of the R groups are joined together to form ring systems, at least one of R 3 and R 4 is H, and R 5 is H; and n=1 to 6; vaporizing the liquid precursor to form vaporized precursor; and directing the vaporized precursor toward the semiconductor substrate or substrate assembly to form a metal-containing thin on a surface of the semiconductor substrate or substrate assembly.
Claim 23
Independent Claim
128 words
A method of forming a film on a substrate, the method comprising: providing a substrate; providing a precursor comprising one or more complexes of the formulas: ##STR7## wherein: M is a Group IIIA metal; each R 1 , R 2 , R 3 , R 4 , and R 5 group is independently H or a (C 1 -C 30 )organic group, wherein optionally R 3 and R 4 are joined to form a ring or rings with the metal and none of the other R groups are joined together to form ring systems; and n=1 to 6; forming a metal-containing film from the precursor on a surface of the substrate; wherein the metal-containing film is a Group IIIA metal film on a group IIIA metal alloy film.
Claim 24
Independent Claim
128 words
A method of forming a film on a substrate, the method comprising: providing a substrate; providing a precursor comprising one or more complexes of the formulas: ##STR7## wherein: M is a Group IIIA metal; each R 1 , R 2 , R 3 , R 4 , and R 5 group is independently H or a (C 1 -C 30 )organic group, wherein optionally R 3 and R 4 are joined to form a ring or rings with the metal and none of the other R groups are joined together to form ring systems; and n=1 to 6; forming a metal-containing film from the precursor on a surface of the substrate; wherein the metal-containing film is a Group IIIA metal film on a group IIIA metal alloy film.
Claim 25
Dependent Claim
35 words
The method of claim 20 wherein the step of forming a metal-containing film comprises vaporizing the precursor to form vaporized precursor and directing the vaporized precursor toward the substrate using a chemical vapor deposition technique.
Claim 26
Dependent Claim
11 words
The method of claim 20 wherein the precursor is a liquid.
Claim 27
Dependent Claim
15 words
The method of claim 20 wherein the metal-containing film is a Group IIIA metal film.
Claim 28
Dependent Claim
16 words
The method of claim 20 wherein the metal-containing film is a Group IIIA metal alloy film.
Claim 29
Dependent Claim
45 words
The method of claim 20 wherein the step of forming a metal-containing film comprises vaporizing the precursor to form vaporized precursor and directing the vaporized precursor toward the substrate in the presence of a carrier gas and/or reaction gas using a chemical vapor deposition technique.
Claim 30
Dependent Claim
22 words
The method of claim 25 wherein the precursor is vaporized and/or directed toward the substrate in the presence of a carrier gas.
Claim 31
Dependent Claim
22 words
The method of claim 26 wherein the precursor is vaporized and/or directed toward the substrate in the presence of a reaction gas.
Claim 32
Dependent Claim
19 words
The method of claim 20 wherein the precursor further comprises one or more compounds containing a Group VA element.
Claim 33
Dependent Claim
11 words
The method of claim 23 wherein the precursor is a liquid.
Claim 34
Independent Claim
108 words
A method of forming a film on a substrate, the method comprising: providing a substrate; providing a precursor comprising one or more hydride complexes of the formulas: ##STR8## wherein: M is a Group IIIA metal; each R 1 , R 2 , R 3 , R 4 and R 5 group is independently H or a (C 1 -C 30 )organic group, wherein none of the R groups are joined together to form ring systems, at least one of R 3 and R 4 is H, and R 5 is H; and n=1 to 6; forming a metal-containing film from the precursor on a surface of the substrate.
Claim 35
Independent Claim
108 words
A method of forming a film on a substrate, the method comprising: providing a substrate; providing a precursor comprising one or more hydride complexes of the formulas: ##STR8## wherein: M is a Group IIIA metal; each R 1 , R 2 , R 3 , R 4 and R 5 group is independently H or a (C 1 -C 30 )organic group, wherein none of the R groups are joined together to form ring systems, at least one of R 3 and R 4 is H, and R 5 is H; and n=1 to 6; forming a metal-containing film from the precursor on a surface of the substrate.
Claim 36
Independent Claim
125 words
A method of forming a film on a substrate, the method comprising: providing a substrate; providing a liquid precursor comprising one or more hydride complexes of the formulas: ##STR9## wherein: M is a Group IIIA metal; each R 1 , R 2 , R 3 , R 4 , and R 5 group is independently H or a (C 1 -C 30 ) organic group, wherein none of the R groups are joined together to form ring systems, at least one of R 3 and R 4 id H, and R 5 is H; and n=1 to 6; vaporizing the liquid precursor to form vaporized precursor; and directing the vaporized precursor toward the substrate to form a metal-containing film on a surface of the substrate.
Claim 37
Independent Claim
125 words
A method of forming a film on a substrate, the method comprising: providing a substrate; providing a liquid precursor comprising one or more hydride complexes of the formulas: ##STR9## wherein: M is a Group IIIA metal; each R 1 , R 2 , R 3 , R 4 , and R 5 group is independently H or a (C 1 -C 30 ) organic group, wherein none of the R groups are joined together to form ring systems, at least one of R 3 and R 4 id H, and R 5 is H; and n=1 to 6; vaporizing the liquid precursor to form vaporized precursor; and directing the vaporized precursor toward the substrate to form a metal-containing film on a surface of the substrate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2003-10-10 | 2004-04-10 | 2004-10-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-10-10 | 2008-04-10 | 2008-10-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-10-10 | 2012-04-10 | 2012-10-10 | $7700.00 | Window Closed / Lapsed |