US6124189A
Expired / Lapsed
US
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Metallization structure and method for a semiconductor device
Assignee: Toshiba Corp
•
Filing: 1997-03-14
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Granted: 2000-09-26
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Expires: 2017-03-14
Abstract
Abstract A method for forming a metal-strapped polysilicon gate and for simultaneously forming a strapped-metal polysilicon gate and a metal contact filling includes the steps of forming a gate dielectric layer on a surface of a silicon substrate; forming a polysilicon layer on the gate dielectric layer; forming a first insulating layer on the polysilicon layer; forming insulating spacers on either side of the polysilicon layer and the first insulating layer; and forming ion implantation regions in the surface of the silicon substrate. Next, a second insulating layer is deposited on the silicon substrate, and the second insulating layer is polished using chemical mechanical polishing to planarize the upper surface of the second insulating layer with the upper surface of the first insulating layer as a polishing stopper. Then, a contact hole is formed in the second insulating film, wherein the contact hole is laterally spaced from the polysilicon layer and the first insulating layer. Subsequent steps include: removing the first insulating layer, thereby forming an unfilled region above the polysilicon layer; depositing a metal such as tungsten in the unfilled region and the contact hole; and polishing the deposited metal layer to planarize the upper surface of the metal with the upper surface of the second insulating layer.
Inventors
- 👤 Toru Watanabe
- 👤 Katsuya Okumura
- 👤 Katsuhiko Hieda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 13:03
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D30/0227; H10W; H10W20/00; H10W20/01; H10D64/00; H10D64/01; H10D64/017
Claims Analysis
Total Claims: 51
Claim 1
Independent Claim
116 words
A method for forming a metal-strapped polysilicon gate structure, comprising the steps of: forming a gate dielectric layer on a surface of a substrate; forming a polysilicon layer on said gate dielectric layer; forming a masking layer on said polysilicon layer; patterning said masking layer; etching said polysilicon layer using said patterned masking layer as a mask to form a gate electrode; depositing an insulating layer on said substrate; removing said patterned masking layer, thereby forming an unfilled region above said gate electrode; depositing a metal to fill in said unfilled region; and planarizing the deposited metal such that an upper surface of said metal is substantially level with an upper surface of said insulating layer.
Claim 2
Independent Claim
116 words
A method for forming a metal-strapped polysilicon gate structure, comprising the steps of: forming a gate dielectric layer on a surface of a substrate; forming a polysilicon layer on said gate dielectric layer; forming a masking layer on said polysilicon layer; patterning said masking layer; etching said polysilicon layer using said patterned masking layer as a mask to form a gate electrode; depositing an insulating layer on said substrate; removing said patterned masking layer, thereby forming an unfilled region above said gate electrode; depositing a metal to fill in said unfilled region; and planarizing the deposited metal such that an upper surface of said metal is substantially level with an upper surface of said insulating layer.
Claim 3
Dependent Claim
11 words
The method according to claim 1, wherein said metal is tungsten.
Claim 4
Dependent Claim
18 words
The method according to claim 1, wherein the deposited metal is planarized by a chemical mechanical polishing process.
Claim 5
Dependent Claim
16 words
The method according to claim 1, wherein said metal is deposited using a blanket deposition method.
Claim 6
Dependent Claim
32 words
The method of claim 1, further including the step of forming an adhesion layer on said gate electrode, the step of depositing said metal including depositing said metal on said adhesion layer.
Claim 7
Dependent Claim
24 words
The method of claim 5, wherein the step of forming the adhesion layer is performed after the step of removing said patterned masking layer.
Claim 8
Dependent Claim
12 words
The method of claim 5, wherein said adhesion layer comprises titanium nitride.
Claim 9
Dependent Claim
10 words
The method of claim 7, wherein said metal is tungsten.
Claim 10
Dependent Claim
25 words
The method of claim 1, wherein the step of depositing said metal includes depositing said metal to at least completely fill in said unfilled region.
Claim 11
Dependent Claim
28 words
The method of claim 1, wherein the step of depositing said metal includes depositing said metal to overflow said unfilled region onto a surface of said insulating layer.
Claim 12
Dependent Claim
23 words
The method of claim 10, further including the step of adjusting a surface of said metal to be coplanar with said insulating layer.
Claim 13
Independent Claim
147 words
A method for forming a metal-strapped polysilicon gate structure and a metal contact structure, comprising the steps of: forming a gate dielectric layer on a surface of a substrate; forming a polysilicon layer on said gate dielectric layer; forming a masking layer on said polysilicon layer; patterning said masking layer; etching said polysilicon layer using said patterned masking layer as a mask to form a gate electrode; implanting ions in the surface of said substrate using said patterned masking layer and said gate electrode as an implantation mask to thereby form spaced apart source/drain regions; depositing an insulating layer on said substrate; forming a contact hole in said insulating layer for contacting at least one of said source/drain regions; removing said patterned masking layer to form an unfilled region above said gate electrode; and depositing a metal to fill in said unfilled region and said contact hole.
Claim 14
Independent Claim
147 words
A method for forming a metal-strapped polysilicon gate structure and a metal contact structure, comprising the steps of: forming a gate dielectric layer on a surface of a substrate; forming a polysilicon layer on said gate dielectric layer; forming a masking layer on said polysilicon layer; patterning said masking layer; etching said polysilicon layer using said patterned masking layer as a mask to form a gate electrode; implanting ions in the surface of said substrate using said patterned masking layer and said gate electrode as an implantation mask to thereby form spaced apart source/drain regions; depositing an insulating layer on said substrate; forming a contact hole in said insulating layer for contacting at least one of said source/drain regions; removing said patterned masking layer to form an unfilled region above said gate electrode; and depositing a metal to fill in said unfilled region and said contact hole.
Claim 15
Dependent Claim
24 words
The method according to claim 12, further comprising the step of polishing said insulating layer to planarize an upper surface of said insulating layer.
Claim 16
Dependent Claim
23 words
The method according to claim 12, further comprising the step of polishing said deposited metal to planarize an upper surface of said metal.
Claim 17
Dependent Claim
11 words
The method according to claim 12, wherein said metal is tungsten.
Claim 18
Dependent Claim
15 words
The method according to claim 12, wherein said masking layer is a silicon nitride layer.
Claim 19
Dependent Claim
36 words
The method according to claim 12, further comprising the step of forming insulating spacers on sidewalls of said patterned masking layer and said gate electrode prior to implanting ions in the surface of said silicon substrate.
Claim 20
Dependent Claim
15 words
The method according to claim 11, wherein said insulating spacers are formed of silicon dioxide.
Claim 21
Dependent Claim
19 words
The method according to claim 12, further comprising the step of forming a silicide layer on said source/drain regions.
Claim 22
Dependent Claim
15 words
A method according to claim 12, wherein said insulating layer is a silicon dioxide layer.
Claim 23
Dependent Claim
17 words
The method according to claim 12, wherein said contact hole aligns to said gate electrode in lithography.
Claim 24
Dependent Claim
21 words
The method according to claim 12, further comprising the step of forming a contact diffusion region after forming said contact hole.
Claim 25
Dependent Claim
17 words
The method according to claim 12, wherein said masking layer is removed using a wet etching process.
Claim 26
Dependent Claim
31 words
The method according to claim 12, wherein said metal is deposited using a selective deposition method in which said metal is deposited selectively in said unfilled region and said contact hole.
Claim 27
Dependent Claim
16 words
The method according to claim 12, wherein said metal is deposited using a blanket deposition method.
Claim 28
Dependent Claim
18 words
The method according to claim 13, wherein said polishing step is performed using a chemical mechanical polishing process.
Claim 29
Dependent Claim
32 words
The method of claim 12, further including the step of forming an adhesion layer on said gate electrode, the step of depositing said metal including depositing said metal on said adhesion layer.
Claim 30
Dependent Claim
24 words
The method of claim 27, wherein the step of forming the adhesion layer is performed after the step of removing said patterned masking layer.
Claim 31
Dependent Claim
12 words
The method of claim 27, wherein said adhesion layer comprises titanium nitride.
Claim 32
Dependent Claim
10 words
The method of claim 29, wherein said metal is tungsten.
Claim 33
Dependent Claim
25 words
The method of claim 12, wherein the step of depositing said metal includes depositing said metal to at least completely fill in said unfilled region.
Claim 34
Dependent Claim
28 words
The method of claim 12, wherein the step of depositing said metal includes depositing said metal to overflow said unfilled region onto a surface of said insulating layer.
Claim 35
Dependent Claim
23 words
The method of claim 32, further including the step of adjusting a surface of said metal to be coplanar with said insulating layer.
Claim 36
Independent Claim
119 words
A method of forming a gate electrode comprising the steps of: forming a structure on a semiconductor substrate which is insulatively spaced from a channel region between source/drain regions formed on a surface of said semiconductor substrate, said structure including a first conductive layer and a cap layer formed on said first conductive layer; depositing an insulating layer on said semiconductor substrate and said structure; planarizing an upper surface of said insulating layer using said cap layer as a stopper; removing said cap layer to form an opening above said first conductive layer of said structure; depositing a conductive material in said opening; and planarizing an upper surface of said conductive material using said insulating layer as a stopper.
Claim 37
Independent Claim
119 words
A method of forming a gate electrode comprising the steps of: forming a structure on a semiconductor substrate which is insulatively spaced from a channel region between source/drain regions formed on a surface of said semiconductor substrate, said structure including a first conductive layer and a cap layer formed on said first conductive layer; depositing an insulating layer on said semiconductor substrate and said structure; planarizing an upper surface of said insulating layer using said cap layer as a stopper; removing said cap layer to form an opening above said first conductive layer of said structure; depositing a conductive material in said opening; and planarizing an upper surface of said conductive material using said insulating layer as a stopper.
Claim 38
Dependent Claim
34 words
The method of claim 34, further including the step of forming an adhesion layer on said conductive layer, the step of depositing said conductive material including depositing said conductive material on said adhesion layer.
Claim 39
Dependent Claim
23 words
The method of claim 35, wherein the step of forming the adhesion layer is performed after the step of removing said cap layer.
Claim 40
Dependent Claim
12 words
The method of claim 35, wherein said adhesion layer comprises titanium nitride.
Claim 41
Dependent Claim
11 words
The method of claim 37, wherein said conductive material is tungsten.
Claim 42
Dependent Claim
25 words
The method of claim 34, wherein the step of depositing said conductive material includes depositing said conductive material to at least completely fill said opening.
Claim 43
Dependent Claim
30 words
The method of claim 34, wherein the step of depositing said conductive material includes depositing said conductive material to overflow said opening onto the upper surface of said insulating layer.
Claim 44
Independent Claim
140 words
A method of simultaneously forming a gate electrode and a contact, comprising the steps of: forming a structure on a semiconductor substrate which is insulatively spaced from a channel region between source/drain regions formed on a surface of said semiconductor substrate, said structure including a first conductive layer and a cap layer formed on said first conductive layer; depositing an insulating layer on said semiconductor substrate and said structure; planarizing an upper surface of said insulating layer using said cap layer as a stopper; forming contact holes to expose at least one of said source/drain regions; removing said cap layer to form an opening above said conductive layer of said structure; depositing a conductive material to simultaneously fill said opening and said contact holes; and planarizing an upper surface of said conductive material using said insulating layer as a stopper.
Claim 45
Independent Claim
140 words
A method of simultaneously forming a gate electrode and a contact, comprising the steps of: forming a structure on a semiconductor substrate which is insulatively spaced from a channel region between source/drain regions formed on a surface of said semiconductor substrate, said structure including a first conductive layer and a cap layer formed on said first conductive layer; depositing an insulating layer on said semiconductor substrate and said structure; planarizing an upper surface of said insulating layer using said cap layer as a stopper; forming contact holes to expose at least one of said source/drain regions; removing said cap layer to form an opening above said conductive layer of said structure; depositing a conductive material to simultaneously fill said opening and said contact holes; and planarizing an upper surface of said conductive material using said insulating layer as a stopper.
Claim 46
Dependent Claim
34 words
The method of claim 41, further including the step of forming an adhesion layer on said conductive layer, the step of depositing said conductive material including depositing said conductive material on said adhesion layer.
Claim 47
Dependent Claim
23 words
The method of claim 42, wherein the step of forming the adhesion layer is performed after the step of removing said cap layer.
Claim 48
Dependent Claim
12 words
The method of claim 42, wherein said adhesion layer comprises titanium nitride.
Claim 49
Dependent Claim
11 words
The method of claim 44, wherein said conductive material is tungsten.
Claim 50
Dependent Claim
31 words
The method of claim 41, wherein the step of depositing said conductive material includes depositing said conductive material to at least completely fill each of said opening and said contact holes.
Claim 51
Dependent Claim
36 words
The method of claim 41, wherein the step of depositing said conductive material includes depositing said conductive material to overflow each of said opening and said contact holes onto the upper surface of said insulating layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-09-26 | 2004-03-27 | 2004-09-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-09-26 | 2008-03-27 | 2008-09-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-09-26 | 2012-03-27 | 2012-09-26 | $7700.00 | Window Closed / Lapsed |